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Physical Review B

Coherent manipulation of a strongly driven semiconductor quantum well

Emmanuel Paspalakis, Margarita Tsaousidou, Andreas Terzis

Published Mar 29, 2006• 78 citations
Publisher

Abstract

We study the interaction of a pulsed electric field with a semiconductor quantum well by using the effective nonlinear Bloch equations. We present analytical solutions for the Bloch equations for specific system parameters, under the rotating wave approximation. We also present conditions that could lead to complete inversion in the system for a wide range of parameters. Our findings are assessed by numerical calculations for a double quantum well based on GaAs.

DOI
10.1103/physrevb.73.125344

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We study the interaction of a pulsed electric field with a semiconductor quantum well by using the effective nonlinear Bloch equations. We present analytical solutions for the Bloch equations for specific system parameters, under the rotating wave approximation. We also present conditions that could lead to complete inversion in the system for a wide range of parameters. Our findings are assessed by numerical calculations for a double quantum well based on GaAs.
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We study theoretically the Kerr nonlinearity of a probe field in the presence of a near resonant pump field in a two-subband system in a semiconductor quantum well structure. In our study we take into account the effects of electron–electron interactions and consider the interaction of the two-subband system with rectangular electromagnetic fields. For the description of the system dynamics we use the nonlinear differential equations of the density matrix elements for the several nonlinear optical processes, under the rotating wave approximation. These equations are solved numerically for a GaAs/AlGaAs quantum well structure. We show that the Kerr nonlinearity of a driven two-subband system can be significantly dependent on the frequency and the intensity of the pump field and on electron sheet density.
We study theoretically the phenomenon of four-wave mixing in intersubband transitions of a symmetric double quantum well structure. In the theoretical model we consider two quantum well subbands that are coupled by a strong pump electromagnetic field and a weak probe electromagnetic field, taking into account the effects of electron-electron interactions. For the description of the system dynamics we use the density matrix equations obtained from the effective nonlinear Bloch equations. These equations are solved numerically for a realistic semiconductor quantum well structure GaAs/AlGaAs. We show that the four-wave mixing spectrum can be significantly dependent on the frequency and the intensity of the pump field and on electron sheet density.
: We study the creation of high-efficiency controlled population transfer in intersubband transitions of semiconductor quantum wells. We give emphasis to the case of interaction of the semiconductor quantum well with electromagnetic pulses with a duration of few cycles and even a single cycle. We numerically solve the effective nonlinear Bloch equations for a specific double GaAs/AlGaAs quantum well structure, taking into account the ultrashort nature of the applied field, and show that high-efficiency population inversion is possible for specific pulse areas. The dependence of the efficiency of population transfer on the electron sheet density and the carrier envelope phase of the pulse is also explored. For electromagnetic pulses with a duration of several cycles, we find that the change in the electron sheet density leads to a very different response of the population in the two subbands to pulse area. However, for pulses with a duration equal to or shorter than 3 cycles, we show that efficient population transfer between the two subbands is possible, independent of the value of electron sheet density, if the pulse area is Π.