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Physics of Wave Phenomena

Optical bistability in low-dimensional semiconductor heterostructures under cw pump laser and infrared pulse signals

Hamid Reza Hamedi, Ali Khaledi‐Nasab, Ali Raheli, B. Haddadpour-Khiaban, Mostafa Sahrai

Published Jul 1, 2013• 6 citations
Publisher

Abstract

We have investigated theoretically the optical bistability (OB) and optical multistability in quantum-well (QW) semiconductor heterostructures. The effect of a cw pump laser field and a control infrared pulse signal on OB is discussed. It is found that the OB threshold can be controlled by varying the strength of applied fields. It is also shown that OB can be switched to optical multistability or vice versa just using an appropriate relative phase of applied fields. This investigation may open up some new possibilities for applications in all-optical switching in quantum-well structures.

DOI
10.3103/s1541308x13030072

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We have investigated theoretically the optical bistability (OB) and optical multistability in quantum-well (QW) semiconductor heterostructures. The effect of a cw pump laser field and a control infrared pulse signal on OB is discussed. It is found that the OB threshold can be controlled by varying the strength of applied fields. It is also shown that OB can be switched to optical multistability or vice versa just using an appropriate relative phase of applied fields. This investigation may open up some new possibilities for applications in all-optical switching in quantum-well structures.
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Abstract The problem of optical bistability (OB) and optical multistability (OM) is numerically investigated in a four-level inverted Y-type semiconductor quantum well (SQW) structure immersed in a unidirectional ring cavity. In the four-level SQW system under consideration, a closed loop configuration is coupled to the upper level through a tunable probe field. We show that the OB threshold intensity can be controlled via the intensity of coupling fields which gives rise to the absorption variation of the probe field. In addition, due to the existence of the closed-loop configuration, the OB and OM behaviors of the proposed SQW medium are dependent on the relative phase of the applied fields. It is found that the OB can be switched to OM or vice versa by properly adjusting the relative phase of the applied fields. The results may provide new possibilities in real experiments for realizing an all-optical switching or coding element in a solid-state platform.
This paper deals with optical bistability (OB) and optical multistability (OM) behaviors for a triple semiconductor quantum well (SQW) structure driven coherently with two control fields, confined in a unidirectional ring cavity. The effect of different system parameters on OB and OM is explored. It is found that the threshold of onset of the OB can be controlled by manipulating the Rabi frequency of control fields. In this case, OB can be converted to OM. Then we investigate the effect of probe and control field detunings on OB behaviors. We found that the frequency detuning of probe field affects only the upper–lower branches of the OB curves but has no specific impact on OB threshold. By manipulating the first control field detuning, neither the OB threshold intensity nor upper–lower branches change. Finally, it is found that increasing the second control field detuning can reduce merely the OB threshold intensity, while no change happens in upper–lower OB branches. The results may be applicable in real experiments for realizing an all-optical switching or coding element in a solid-state platform.
Abstract Optical bistability (OB) and optical multistability (OM) due to wide applications in all-optical switching and transistors is studied in this paper. Here, we study the OB and OM properties of incident light in a defect slab doped by a GaAs quantum well (QW) nanostructure. It is shown that OB and OM features can be manipulated by spin coherence created by circular polarized laser fields in GaAs QWs. The impacts of laser field features, such as intensity, frequency detuning, and relative phase, on OB and OM are simulated. Moreover, the dependence of OB and OM features of a probe light on the thickness of the slab, then, are analyzed. It is found that the thickness of the slab can provide a new way to optimize the intensity threshold of OB and OM. We hope that our proposed model may be useful for developing all-optical devices on nanoscales.
Optical bistability (OB) and optical multistability (OM) are investigated in a triple coupled quantum wells system inside a semiconductor cavity sandwiched by distributed Bragg reflector mirrors. By proper manipulation of the optical and electrical parameters, the behaviors of OB and OM can be efficiently controlled. We show that, by tuning the tunneling rates between the quantum wells, the threshold and hysteresis cycle of OB and OM can be engineered. The effect of the incoherent pump field as well as the cooperation parameter on creation of OB is also discussed.