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Journal of the Optical Society of America B

Switching from optical bistability to multistability in a coupled semiconductor double-quantum-dot nanostructure

Zhiping Wang, Benli Yu

Published Oct 17, 2013• 78 citations
Publisher

Abstract

We investigate the optical bistability (OB) and multistability in a coupled semiconductor double-quantum-dot nanostructure inside an optical ring cavity. It is found that the transition from OB to multistability or vice versa can be easily controlled via properly adjusting the corresponding parameters of the system. Our scheme opens the possibility to optimize and control all optical switching and all optical storage devices in a coupled semiconductor double-quantum-dot nanostructure.

DOI
10.1364/josab.30.002915

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We investigate the optical bistability (OB) and multistability in a coupled semiconductor double-quantum-dot nanostructure inside an optical ring cavity. It is found that the transition from OB to multistability or vice versa can be easily controlled via properly adjusting the corresponding parameters of the system. Our scheme opens the possibility to optimize and control all optical switching and all optical storage devices in a coupled semiconductor double-quantum-dot nanostructure.
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Abstract We have investigated the optical bistability and multistability behaviors in a three-level V-type system via both coherent and incoherent fields inside a unidirectional ring cavity. We find that the appearance and disappearance of optical bistability (OB)/optical multistability (OM) can easily be controlled by adjusting systemic parameters. Our scheme opens up a new possibility for realizing transition from OB to OM or vice versa for potential applications in information networks and processing with increased capacity.
Abstract In this letter, a comprehensive investigation has been conducted on the optical bistability (OB) and optical multistability (OM) phenomena manifested by transmitted light in a ring cavity consisting of a hybrid system of metal nanoparticle (MNP) and semiconductor quantum dot (SQD). Our study has been primarily devoted to examining the influence of the distance between SQD and MNP, as well as the susceptibilities of the SQD, the MNP, and the hybrid nanostructure as a whole, on the OB and OM traits of the transmitted light. Our discoveries demonstrate that a transition from OB to OM, or vice versa, can be accomplished for a definite distance between MNP and QD. It is our contention that our proposed model may have potential applications in the domain of quantum information processes based on SQD-MNP hybrid systems.
In this paper, our aim is to control optical bistability (OB) and optical multistability (OM) in a five-level system designed in a double quantum dot (QD) nanostructure. In a realistic example, this atomic system is created in two semiconductor QDs (In(x)Ga(1-x)N/GaN), owning transfer of carriers via tunneling effect. OB behavior is controlled not only by the inter-dot tunneling effect but also by variation of probe detuning and intensity of the control field. It is demonstrated that voltage-controlled detuning can significantly affect the behavior of OB and OM; therefore, the OM converts to OB by probe detuning and intensity of the control field.
Optical bistability (OB) and optical multistability (OM) are investigated in a triple coupled quantum wells system inside a semiconductor cavity sandwiched by distributed Bragg reflector mirrors. By proper manipulation of the optical and electrical parameters, the behaviors of OB and OM can be efficiently controlled. We show that, by tuning the tunneling rates between the quantum wells, the threshold and hysteresis cycle of OB and OM can be engineered. The effect of the incoherent pump field as well as the cooperation parameter on creation of OB is also discussed.
Abstract The optical bistability (OB) and multistability (OM) in one-dimensional photonic crystals doped with carbon-nanotube quantum dots (CNT QDs) is theoretically investigated. Our investigations show that due to spin–orbit coupling in CNT QDs the threshold of optical bistability can be adjusted. Also, the switching from OB to OM, or vice versa, can be achieved by controlling the transverse magnetic field. Our proposed model can be used as a suitable structure based on CNT QDs for realizing all-optical switching devices. Moreover, we realize that the controlling of OB and OM can be done without changing the thickness of the layers.