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Superconductor Science and Technology

SNS and SIS Josephson junctions with dimensions down to the submicron region prepared by a unified technology

Ludwig Fritzsch, H. Elsner, M. Schubert, H.‐G. Meyer

Published Nov 1, 1999• 9 citations
Publisher

Abstract

Several applications of Josephson junctions (JJs) in low-temperature superconducting circuits such as programmable voltage standards and SFQ logical circuits or SQUID sensors require JJs with sub-µm dimensions. A method for preparing superconductor-isolator-superconductor (SIS) JJs as well as superconductor-normal metal-superconductor (SNS) JJs was developed which allows the preparation of both types of junctions by nearly the same technological process. Titanium is used as the normal metal for the SNS JJ. Ti can be anodically oxidized and a technology similar to the well-tried Nb-Al technology for SIS JJs can be applied to the SNS system, too. By electron-beam exposure of a negative deep UV photoresist (ma-N 2400) a stable resist mask is generated which has to withstand the following three self-aligned process steps: etching of the Nb counterelectrode by RIE, isolation by anodization and lifting of a SiO planarization layer. By this process SNS (Nb-Ti-Nb) and SIS (Nb-Al/AlO x -Nb) Josephson junctions with smallest junction areas of 0.49 µm 2 were prepared and characterized by dc measurements and under the influence of microwave irradiation. The Nb-Ti-Nb junctions have I c R n products of 87 µV. They can be used for programmable Josephson voltage standard circuits at frequencies of 70 GHz.

DOI
10.1088/0953-2048/12/11/356

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Several applications of Josephson junctions (JJs) in low-temperature superconducting circuits such as programmable voltage standards and SFQ logical circuits or SQUID sensors require JJs with sub-µm dimensions. A method for preparing superconductor-isolator-superconductor (SIS) JJs as well as superconductor-normal metal-superconductor (SNS) JJs was developed which allows the preparation of both types of junctions by nearly the same technological process. Titanium is used as the normal metal for the SNS JJ. Ti can be anodically oxidized and a technology similar to the well-tried Nb-Al technology for SIS JJs can be applied to the SNS system, too. By electron-beam exposure of a negative deep UV photoresist (ma-N 2400) a stable resist mask is generated which has to withstand the following three self-aligned process steps: etching of the Nb counterelectrode by RIE, isolation by anodization and lifting of a SiO planarization layer. By this process SNS (Nb-Ti-Nb) and SIS (Nb-Al/AlO x -Nb) Josephson junctions with smallest junction areas of 0.49 µm 2 were prepared and characterized by dc measurements and under the influence of microwave irradiation. The Nb-Ti-Nb junctions have I c R n products of 87 µV. They can be used for programmable Josephson voltage standard circuits at frequencies of 70 GHz.
Superconductor-normal metal-superconductor (SNS) junctions are well-suited for large-scale integrated superconducting circuits. Potential applications are programmable voltage standards, digital-to-analog converters and large-scale RSFQ circuits. The application of SNS junctions provides some advantages, e.g. a simplified fabrication technology and reduced parasitic inductances. But it requires a technological process with dimensions down to the submicrometer region to achieve sufficiently high characteristic voltages I/sub C/R/sub N/. In our process the normal metal interlayer is titanium. Therefore the sidewall insulation of the junctions can be made by anodization, as it is known from the Nb-Al technology. Nb-Ti-Nb Josephson junctions and junction arrays were fabricated down to the submicrometer range with I/sub C/R/sub N/ values up to 87 microvolt depending on the titanium thickness. Their measured critical currents have a small spread of about 10 percent. Shapiro steps are observed under the influence of microwave irradiation. For the application of such junctions in a programmable Josephson voltage standard a new type of microwave circuit using coplanar strips is proposed and successfully tested in 10 V SIS circuits.
At PTB, a fabrication process has been developed in SNS Nb/PdAu/Nb technology for the verification of small Josephson junctions (JJs) in the deep sub-micron range to enable the implementation of JJs as active elements in highly integrated superconducting circuits. Two steps of this technological development are described with regard to appropriately designed circuit layouts of JJ series arrays (JJAs), the first one in a conventional window type junction (WTJ) configuration and the second one in a ramp type junction (RTJ) configuration. Test circuits of JJAs containing up to 10 000 JJs have been fabricated and experimentally tested. In WTJ configuration, the circuits proved to be sensitive to external perturbing effects affecting the stability of circuit operation. In contrast to that, in RTJ configuration, the circuits realized showed correct function and a high grade of reliability of operation. To produce RTJ circuits, the technology parameters have been set to realize JJs with contact areas of A = 0.25 µm × 1.3 µm. At a thickness of the PdAu normal metal layer of d = 40 nm, the values achieved for the critical current density and for the product of critical current and normal state resistance are about jc = 200 kA cm-2 and about Ic RN = 21 µV.
Single nonhysteretic superconductor-metal-superconductor Josephson junctions consisting of Nb-Ti-Nb were prepared using the well-known anodization process for the isolation of the junctions. The 4×4 μm2 junctions show overdamped Josephson current-voltage characteristics at 4.2 K. The characteristic voltage IcRn is about 8.0 μV at a critical current density jc of about 29 kA/cm2. Under the influence of 10.5 GHz microwave irradiation the constant-voltage steps of n=0 and ±1 are observed with current amplitudes of about 3 mA.
Researches on the fabrication of ~ 0.1 × 0.1 μ m 2 superconductor–insulator–superconductor (SIS) Josephson junctions are reviewed. Today, a typical dimension is 1–10 μm for Josephson junctions in superconducting integrated circuits. These Josephson junctions are defined by well-established photolithographic technology with reactive ion etching (RIE), and for the superconductor, Nb is almost always used. The merits of Nb include the facts that the superconducting transition temperature Tc of Nb (9.2 K ) is higher than the boiling point of He (4.2 K ), and that Nb has excellent stability against thermal cycling between room temperature and liquid- He temperature. For the fabrication of ~ 0.1 × 0.1 μ m 2 junctions, on the other hand, there is a standard process with electron-beam lithography, shadow evaporation, and lift-off. This process works well for Al (Tc = 1.2 K ), however, it is not ideal for Nb . The scope of this brief review is the nanoscale junction with Nb electrodes. We will look at the efforts of optimizing the standard lift-off process for Nb , electron-beam-lithographic versions of the Nb Josephson-junction technology, focused-ion-beam (FIB) etching as a convenient alternative to electron-beam lithography and RIE, etc. In order to characterize nanoscale tunnel junctions, the single-charge transistor has been often fabricated. Therefore, a summary of its theoretical transport properties is also included.
Nonhysteretic Josephson junctions with a superconductor-insulator-normal metal-insulator-superconductor (SINIS) structure fabricated using the reliable Nb-AlO/sub x/ technology have been used for the design and fabrication of a 1-V inherently stable Josephson voltage standard. The superconducting circuit can be driven at the same microwave frequencies as conventional SIS circuits. The microwave-induced 1-V step is suitable for calibration purposes. The successful operation of the 1-V circuit is due to an internal, phase-locked oscillation of all SINIS junctions which are embedded in a low-impedance strip-line. The microwave power required for exciting the coherent oscillation is very low and allows the integration of low power sources. Even operation without any external microwave source appears to be possible.
We present results of the microfabrication of Josephson Junctions (JJs) of Superconductor-Normal-superconductor (SNS) type, as a first step in the acquisition of the know-how of superconducting devices applied to radioastronomy. A twojunction SQUID was built using a Nb/Al bilayer deposited on a Si wafer. The procedure needs only one mask and a single UV exposure (i.e., one photolithography step). We show the micrograph and the observed non linear characteristic I-V curve at 4K of the first device fabricated in the framework of ALMA Grant 31090010.