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IEEE International Superconductive Electronics Conference (ISEC)

Bit error rate in low-voltage RSFQ circuits with small critical currents/lowered bias voltages

Masamitsu Tanaka, Kitayama Atsushi, Takumi Takinami, Yuto Komura, Akira Fujimaki

Published Jul 1, 2013• 4 citations
Publisher

Abstract

We report experimental results of bit-error-rate (BER) measurements in small-critical-current or lowered-biasvoltage rapid single-flux-quantum (RSFQ) circuits for power reduction. In such reduced-power RSFQ circuits, the BERs can be increased because of the reduced signal-to-noise ratio. We fabricated 2-bit shift registers using a 2.5-kA/cm2niobium process, and measured BERs by low-frequency tests at 4.2 K. We obtained sufficiently wide bias margins when we reduced the critical currents in a range of 1/2 to 1/4 of the conventional design, while it narrowed as the critical currents reduced to 1/8. For low-voltage shift registers, the bias margins linearly decreased in width as bias voltages were lowered. We found that 0.25 mV, 1/10 of the conventional design, was a good bias voltage to balance competing power reduction and bias margin.

DOI
10.1109/isec.2013.6604277

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We report experimental results of bit-error-rate (BER) measurements in small-critical-current or lowered-biasvoltage rapid single-flux-quantum (RSFQ) circuits for power reduction. In such reduced-power RSFQ circuits, the BERs can be increased because of the reduced signal-to-noise ratio. We fabricated 2-bit shift registers using a 2.5-kA/cm2niobium process, and measured BERs by low-frequency tests at 4.2 K. We obtained sufficiently wide bias margins when we reduced the critical currents in a range of 1/2 to 1/4 of the conventional design, while it narrowed as the critical currents reduced to 1/8. For low-voltage shift registers, the bias margins linearly decreased in width as bias voltages were lowered. We found that 0.25 mV, 1/10 of the conventional design, was a good bias voltage to balance competing power reduction and bias margin.
We report successful operations of low-energy consumption rapid single-flux-quantum (RSFQ) circuits applying lowered driving voltages, called LV-RSFQ, using different fabrication processes. In the LV-RSFQ, we feed bias currents to Josephson junctions from lowered constant voltages (less than 1 mV) through small resistors without extra inductors. Both static and dynamic energy consumption are reduced because of suppression of amplitudes of SFQ pulses, in exchange for slower switching speed. We show that the switching speed in LV-RSFQ circuits is improved by increasing critical current density of Josephson junctions. We demonstrated high-speed operations of LV-RSFQ shift registers in a range of 5-40 GHz and 15-90 GHz using the 2.5-kA/cm2and 10-kA/cm2fabrication technologies, respectively. Comparison of the experimental results of the LV-RSFQ circuits fabricated using two different technologies derives the optimum bias voltage in terms of energy-delay product ranged from 0.1 to 1.0ICRS, whereICRSis the product of Josephson critical current and shunt resistance.
We demonstrate rapid single-flux-quantum (RSFQ) circuits with reduced energy consumption by lowering the driving voltages and critical currents of Josephson junctions (JJs). At lowered voltages, the energy statically consumed by bias resistors (which is dominant in RSFQ circuits) is reduced. In addition, we show that when RSFQ circuits are driven by lowered constant voltages, the dynamic energy consumption resulting from the switching of JJs is reduced because of the suppression of the amplitudes of the signal voltage pulses, even though the switching speed becomes slower. Utilization of miniaturized JJs with smaller critical currents also leads to the reduction of static and dynamic energy consumption without decreasing the switching speed. We have designed and tested ultra-low-energy 8-bit shift registers, and verified the correctness of high-speed operations up to 18 GHz. The average energy consumption, including that at the bias resistors, was measured at 4.0 aJ/bit, which represents an energy efficiency two orders of magnitude better than that of standard RSFQ circuits.
We have demonstrated rapid-single-flux-quantum (RSFQ) circuits with reduced power consumptions by lowering bias voltages and critical currents. The power consumption including a power consumption of a bias resistor is measured to be around 1 nW/JJ in 8-bit shift registers, while the operating frequency ranges from 7.5 GHz to 20 GHz. we lower bias voltages applied to RSFQ circuits. The values of bias resistances are proportional to bias voltages. At lowered bias voltages, the power consumption of the bias resistor is reduced. When a voltage begins to be generated at a Josephson junction, the net current provided to the junction and to the shunt resistor is decreased. As a result, the magnitude of the voltage is suppressed, and the power consumption of the shunt resistor is reduced. The power energy-delay product is about 70 times smaller and the the energy-delay product is more than 13 times smaller than that of the conventional RSFQ circuits. Low poewer SFQ circuits are superior in terms of energy-delay product to semiconductor circuits though the power consumption of SFQ cicuits contains the refrigerating machine.
In this study, the trade-off among power consumptions, operating frequencies, and error rates in low-power single-flux-quantum (SFQ) circuit is investigated. The power consumption of SFQ circuits can be reduced by the lowering critical currents (IcI_{\mathrm{c}}Ic​values) of the Josephson junctions (JJs), or the bias voltage (VbV_{\mathrm{b}}Vb​). The shifts and spreads of timing parameter fluctuations whenIcI_{\mathrm{c}}Ic​andVbV_{\mathrm{b}}Vb​were lowered were numerically analyzed, with consideration of thermal noise at 4.2 K. The timing behaviors afterIcI_{\mathrm{c}}Ic​was lowered were relatively simple, being based on the signal-to-noise ratio, whereas those for loweredVbV_{\mathrm{b}}Vb​values were complicated because of the dynamic behaviors of JJs driven at reduced voltage. The simulation results imply that the operating frequencies decreased because the timing windows narrowed, but the highest energy efficiency was obtained when we loweredIcI_{\mathrm{c}}Ic​orVbV_{\mathrm{b}}Vb​to 6.25% of their conventional values, and the energy reduction after lowering ofVbV_{\mathrm{b}}Vb​was 26% better than that after lowering ofIcI_{\mathrm{c}}Ic​. Moreover, if a small error rate (for example10−610^{-6}10−6) is acceptable, further improvement in energy efficiency would be expected at significantly higher clock frequencies than would be the case if the SFQ circuit must exhibit error-free operation.
We present a new design technique of rapid single-flux-quantum (RSFQ) logic gates for low-noise, high-speed operation. In this study, we propose the use of a damping resistor shared with a junction pair composing a comparator, in addition to their individual shunt resistors increased from the standard values. We analyzed timing characteristics and bit error rates (BERs) of several RSFQ flip-flops composed of the proposed comparators using numerical simulation. The proposed comparator showed reduced timing jitter by ~5% in association with small delay time, sharpened BER curves, and improvement in operating margins by 2-3% compared to the standard design. We fabricated 2-bit shift registers using the noise reduction technique. We obtained sharp BER curves from the measurement. The proposed method indicated that it gave wide margins.
We report low-power single-flux-quantum (SFQ) circuits fabricated with a lowered critical current density process and low-voltage design. We selected 250 A/cm2^{2}2to obtain 2–10 μA Josephson junctions (JJs) easily using conventional facilities. Our numerical simulation shows that the expected operating frequency is 10 GHz and that we can reduce the bias voltage to 0.1–0.5 mV; power consumption can be reduced to around 1 nW per JJ. We newly developed a fabrication process featuring four planarized Nb layers and a Pd resistor layer. We obtained the correct operation of several basic SFQ circuit elements designed with the lowered critical currents to 1/2 of the conventional circuits at 4.2 K. We also evaluated the Josephson junction critical currents, specific capacitance, resistance, and inductance at 3 K and 300 mK. We observed an increase of 7% in the critical currents at 300 mK, while the other parameters were unchanged. We demonstrated a 0.5-mV Josephson transmission line where we lowered the critical currents to 1/10. We expect such low-power SFQ circuits to operate at 20 mK, providing classical, general-purpose digital processing near quantum bits.