© 2026 Aqora Quantum S.A.S.

Terms Privacy Legal Notice

Superconductor Science and Technology

Fabrication of step-edge Josephson junctions for low-noise dc-SQUIDs

C. Francke, M. Offner, A Krämer, Laurent Mex, Jörg W. Müller

Published Nov 1, 1998• 0 citations

Abstract

We report the development of a fabrication process of high-resistance step-edge Josephson junctions on sharp argon ion beam etched substrate steps. For a reproducible fabrication, the redeposition of material at the step during the etch process has to be avoided. This is achieved by an alternating angle of ion incidence parallel to the edge of the photoresist mask. The reproducible straight step profile exhibits an angle around and is reflected in reproducible electrical properties of the junctions. Critical current and asymptotic normal state resistance both scale with the junction width w . The current-voltage ( I - V ) characteristics depend on the ratio of film thickness t to step height h . For > 0.85 they are flux-flow-like; for < 0.8 they correspond to the resistively shunted junction (RSJ) model. Lower ratios of correspond to higher specific resistances resulting at 77 K typically in asymptotic normal state resistances between 5 and per junction, depending on w . At 77 K we achieve products of more than . The junctions are applied to dc superconducting quantum interference devices (dc-SQUIDs) with inductances between 25 and 35 pH. At 77 K transfer functions of more than are achieved. noise of the step-edge dc-SQUIDs is observed, but using bias current modulation it is entirely suppressed resulting in a spectral density of flux noise of measured at 1 Hz and 77 K for a SQUID with an inductance of 30 pH.

DOI: 10.1088/0953-2048/11/11/019

Related papers

Origin of 1/f noise in Y1Ba2Cu3O7−x step-edge dc SQUIDs

Dirk Grundler, Rainer Eckart, Bernd R. David +1 more

We have fabricated Y1Ba2Cu3O7−x step-edge junction dc superconducting quantum interference devices (SQUIDs) and characterized their noise performance. The current-voltage characteristics of our SQUIDs are of resistively shunted junction type with critical current densities jc of about 104 A/cm2 and maximum flux to voltage transfer functions δV/δΦ of 20 μV/Φ0 at 77 K. We compare model predictions for 1/f noise in dc SQUIDs with experimental data and show that the frequency dependent noise in our devices results from critical current fluctuations of the Josephson junctions. A bias current reversing technique is effective in suppressing this noise contribution. A flux noise Φn of 80 μΦ0/Hz1/2 at 1 Hz and 77 K was measured on a dc SQUID with an inductance Ls of 60 pH.

Applied Physics Letters•Apr 26, 1993•24 citations

Micromachining of SrTiO3steps for high-Tcstep edge junction dc SQUIDs

Jing Wang, Bing Han, Genghua Chen +3 more

In this paper, we establish a model of the micromachined SrTiO 3 substrate steps for high- T c direct-current (dc) superconducting quantum interference devices (SQUIDs). The step angle is determined by the local ion milling rate and re-deposition rate, which is caused by back sputtering of ion milling. At dynamic balance, the maximum possible step angle is predicted to be 75° with an ion beam incidence angle of 45°, which agrees well with the measured value of 71°. In order to obtain a better step sidewall profile, we consider the influences of Nb metal mask micromachining. To avoid a rounded angle at the step upper corner, the minimum thickness of the Nb mask should be 440 nm when the desired step height is 300 nm. At optimized process conditions, steps with sharp, steep angles, and flawless profiles have been fabricated. Nine of the twelve dc SQUIDs thus obtained exhibited resistively shunted junction current–voltage behavior and magnetic field modulation at 77 K.

Journal of Micromechanics and Microengineering•Aug 19, 2003•32 citations

Low 1/f noise single-layer YBa2Cu3Ox dc SQUID at 77 K

Gergely Friedl, M. Vildić, Bernhard Roas +6 more

Autonomous single-layer dc superconducting quantum interference devices (SQUIDs) have been prepared from epitaxial, laser-deposited YBa2Cu3Ox films on step edge SrTiO3 and LaAlO3 substrates. For device patterning, a SiOx inhibit technique as well as conventional ethylenediaminetetraacetic wet etch was used. The Josephson junctions are of grain boundary type. Their widths are 5 μm. The SQUID hole is a square of about 5 μm; the SQUID inductance is estimated to be about 20 pH. We obtained a very regular, nonhysteretic flux to voltage modulation over more than 100 flux quanta (Φ0). The maximum voltage signal is of the order of 15 μV peak to peak and the maximum transfer function dV/dΦ at the appropriate flux bias is 50 μV/Φ0 at 77 K. The best value of the equivalent flux noise as measured in the flux locked loop mode is 1.4×10−5 Φ0/Hz1/2 at 1 Hz and 1×10−5 Φ0/Hz1/2 in the white noise region for f≳5 Hz. This results in an energy resolution εn,w(f≳5 Hz)=1×10−29 J/Hz in the white noise region and 2×10−29 J/Hz at 1 Hz.

Applied Physics Letters•Jun 15, 1992•72 citations

YBa2Cu3O7 step-edge dc SQUID with coplanar control lines

H. Hasegawa, Y. Tarutani, Tokuumi Fukazawa +2 more

A dc superconducting quantum interference device (SQUID) with coplanar control lines has been fabricated from a single layer of YBa2Cu3O7 thin film. Step-edge junctions were formed using resist/Si double-mask layers. Current–voltage characteristics of this SQUID at 77 K show Shapiro steps under microwave irradiation and are qualitatively consistent with the resistively shunted junction (RSJ) model. The spacing between the closed loop and the coplanar control lines in the tested SQUIDs ranged from 0.2 to 1.5 μm. The measured output voltage-control current characteristics showed that the experimentally derived mutual inductances were a function of the spacing, in agreement with the calculated results. The typical mutual inductance for a spacing of 1.0 μm was ∼0.5 pH, which is adequate for detecting signals of flux-transfer logic gates in which the typical logic amplitude is ∼0.1 mA. A coplanar structure is thus useful for logic gate applications.

Applied Physics Letters•Nov 20, 1995•14 citations

DC superconducting quantum interference devices fabricated using bicrystal grain boundary junctions in Co-doped BaFe2As2epitaxial films

Takayoshi Katase, Yoshihiro Ishimaru, Akira Tsukamoto +4 more

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe 2 As 2 epitaxial films on (La, Sr)(Al, Ta)O 3 bicrystal substrates with 30° misorientation angles. The 18 × 8 µm 2 SQUID loop with an estimated inductance of 13 pH contained two 3 µm wide grain boundary junctions. The voltage–flux characteristics clearly exhibited periodic modulations with Δ V = 1.4 µV at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 × 10 − 5 Φ 0 Hz − 1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor–normal-metal–superconductor junction nature of the bicrystal grain boundary.

arXiv:1005.2021•Superconductor Science and Technology•Jul 2, 2010•51 citations

An ultra-low-noise tunnel junction dc SQUID

M. B. Ketchen, Richard F. Voss

The design, fabrication, and noise properties of an ultra-low-noise tunnel junction dc SQUID (superconducting quantum interference device) are presented. The two resistively shunted Pb-alloy tunnel junctions are each 3.6 μm diam. The SQUID has an inductance L of ≈11 pH, a critical current per junction, I0 of ≈100 μA, and a resistance per shunt R of ≈2 Ω. At 2.3 K, eI0R≈kBT, and simple theory predicts that the minimum intrinsic energy sensitivity should be ≈2h. The actual minimum value of the measured high-frequency (70 kHz) flux noise at 4.2 K is φn=1.3×10−7φ0 Hz−1/2. This corresponds to an intrinsic energy sensitivity, φ2n/2L, of 3.2×10−33 J Hz−1 or 5h. Lowering the bath temperature to 1.8 K gave no improvement in performance.

Applied Physics Letters•Nov 15, 1979•61 citations

We report the development of a fabrication process of high-resistance step-edge Josephson junctions on sharp argon ion beam etched substrate steps. For a reproducible fabrication, the redeposition of material at the step during the etch process has to be avoided. This is achieved by an alternating angle of ion incidence parallel to the edge of the photoresist mask. The reproducible straight step profile exhibits an angle around and is reflected in reproducible electrical properties of the junctions. Critical current and asymptotic normal state resistance both scale with the junction width w . The current-voltage ( I - V ) characteristics depend on the ratio of film thickness t to step height h . For > 0.85 they are flux-flow-like; for < 0.8 they correspond to the resistively shunted junction (RSJ) model. Lower ratios of correspond to higher specific resistances resulting at 77 K typically in asymptotic normal state resistances between 5 and per junction, depending on w . At 77 K we achieve products of more than . The junctions are applied to dc superconducting quantum interference devices (dc-SQUIDs) with inductances between 25 and 35 pH. At 77 K transfer functions of more than are achieved. noise of the step-edge dc-SQUIDs is observed, but using bias current modulation it is entirely suppressed resulting in a spectral density of flux noise of measured at 1 Hz and 77 K for a SQUID with an inductance of 30 pH.

We have fabricated Y1Ba2Cu3O7−x step-edge junction dc superconducting quantum interference devices (SQUIDs) and characterized their noise performance. The current-voltage characteristics of our SQUIDs are of resistively shunted junction type with critical current densities jc of about 104 A/cm2 and maximum flux to voltage transfer functions δV/δΦ of 20 μV/Φ0 at 77 K. We compare model predictions for 1/f noise in dc SQUIDs with experimental data and show that the frequency dependent noise in our devices results from critical current fluctuations of the Josephson junctions. A bias current reversing technique is effective in suppressing this noise contribution. A flux noise Φn of 80 μΦ0/Hz1/2 at 1 Hz and 77 K was measured on a dc SQUID with an inductance Ls of 60 pH.

In this paper, we establish a model of the micromachined SrTiO 3 substrate steps for high- T c direct-current (dc) superconducting quantum interference devices (SQUIDs). The step angle is determined by the local ion milling rate and re-deposition rate, which is caused by back sputtering of ion milling. At dynamic balance, the maximum possible step angle is predicted to be 75° with an ion beam incidence angle of 45°, which agrees well with the measured value of 71°. In order to obtain a better step sidewall profile, we consider the influences of Nb metal mask micromachining. To avoid a rounded angle at the step upper corner, the minimum thickness of the Nb mask should be 440 nm when the desired step height is 300 nm. At optimized process conditions, steps with sharp, steep angles, and flawless profiles have been fabricated. Nine of the twelve dc SQUIDs thus obtained exhibited resistively shunted junction current–voltage behavior and magnetic field modulation at 77 K.

Autonomous single-layer dc superconducting quantum interference devices (SQUIDs) have been prepared from epitaxial, laser-deposited YBa2Cu3Ox films on step edge SrTiO3 and LaAlO3 substrates. For device patterning, a SiOx inhibit technique as well as conventional ethylenediaminetetraacetic wet etch was used. The Josephson junctions are of grain boundary type. Their widths are 5 μm. The SQUID hole is a square of about 5 μm; the SQUID inductance is estimated to be about 20 pH. We obtained a very regular, nonhysteretic flux to voltage modulation over more than 100 flux quanta (Φ0). The maximum voltage signal is of the order of 15 μV peak to peak and the maximum transfer function dV/dΦ at the appropriate flux bias is 50 μV/Φ0 at 77 K. The best value of the equivalent flux noise as measured in the flux locked loop mode is 1.4×10−5 Φ0/Hz1/2 at 1 Hz and 1×10−5 Φ0/Hz1/2 in the white noise region for f≳5 Hz. This results in an energy resolution εn,w(f≳5 Hz)=1×10−29 J/Hz in the white noise region and 2×10−29 J/Hz at 1 Hz.

A dc superconducting quantum interference device (SQUID) with coplanar control lines has been fabricated from a single layer of YBa2Cu3O7 thin film. Step-edge junctions were formed using resist/Si double-mask layers. Current–voltage characteristics of this SQUID at 77 K show Shapiro steps under microwave irradiation and are qualitatively consistent with the resistively shunted junction (RSJ) model. The spacing between the closed loop and the coplanar control lines in the tested SQUIDs ranged from 0.2 to 1.5 μm. The measured output voltage-control current characteristics showed that the experimentally derived mutual inductances were a function of the spacing, in agreement with the calculated results. The typical mutual inductance for a spacing of 1.0 μm was ∼0.5 pH, which is adequate for detecting signals of flux-transfer logic gates in which the typical logic amplitude is ∼0.1 mA. A coplanar structure is thus useful for logic gate applications.

DC superconducting quantum interference devices (dc-SQUIDs) were fabricated in Co-doped BaFe 2 As 2 epitaxial films on (La, Sr)(Al, Ta)O 3 bicrystal substrates with 30° misorientation angles. The 18 × 8 µm 2 SQUID loop with an estimated inductance of 13 pH contained two 3 µm wide grain boundary junctions. The voltage–flux characteristics clearly exhibited periodic modulations with Δ V = 1.4 µV at 14 K, while the intrinsic flux noise of dc-SQUIDs was 7.8 × 10 − 5 Φ 0 Hz − 1/2 above 20 Hz. The rather high flux noise is mainly attributed to the small voltage modulation depth which results from the superconductor–normal-metal–superconductor junction nature of the bicrystal grain boundary.

The design, fabrication, and noise properties of an ultra-low-noise tunnel junction dc SQUID (superconducting quantum interference device) are presented. The two resistively shunted Pb-alloy tunnel junctions are each 3.6 μm diam. The SQUID has an inductance L of ≈11 pH, a critical current per junction, I0 of ≈100 μA, and a resistance per shunt R of ≈2 Ω. At 2.3 K, eI0R≈kBT, and simple theory predicts that the minimum intrinsic energy sensitivity should be ≈2h. The actual minimum value of the measured high-frequency (70 kHz) flux noise at 4.2 K is φn=1.3×10−7φ0 Hz−1/2. This corresponds to an intrinsic energy sensitivity, φ2n/2L, of 3.2×10−33 J Hz−1 or 5h. Lowering the bath temperature to 1.8 K gave no improvement in performance.