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Slow-Light in Semiconductor Quantum Wells

C. C. Kuo, Forrest G. Sedgwick, Connie J. Chang-Hasnain +5 more

We demonstrate slow light via population oscillation in semiconductor quantum-well structures for the first time. A group velocity as low as 9600 m/s is inferred from the experimentally measured dispersive characteristics. The transparency window exhibits a bandwidth as large as 2 GHz.

APSMar 1, 20040 citations

Slow light in semiconductor quantum wells

C. C. Kuo, Forrest G. Sedgwick, Connie J. Chang-Hasnain +5 more

We demonstrate slow light via population oscillation in semiconductor quantum-well structures for the first time. A group velocity as low as 9600 m/s is inferred from the experimentally measured dispersive characteristics. The transparency window exhibits a bandwidth as large as 2 GHz.

Optics LettersOct 1, 2004306 citations

Slow-Light in Semiconductor Materials

C. C. Kuo, Forrest G. Sedgwick, Connie J. Chang-Hasnain +5 more

We experimentally demonstrate slow-light in semiconductor quantum well structures. A group velocity as small as 9600 m/s is inferred from the measured dispersive characteristics via Mach-Zehnder interferometry.

Frontiers in OpticsJan 1, 20040 citations

Polarization-dependent excitonic population pulsation and slow light due to excitation-induced dephasing

Shu‐Wei Chang, S. L. Chuang, C. C. Kuo +3 more

We develop a theory for the excitonic population pulsation and slow light in semiconductor quantum wells. Our results agree well with the experimental data including absorption, refractive index dispersion, and the polarization-dependent characteristics.

Conference on Lasers and Electro-OpticsJan 1, 20040 citations

Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies

Jesper Mørk, Rasmus Kjær, M. van der Poel +2 more

Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies slow-down of light by a factor of two in a semiconductor waveguide at room temperature with a bandwidth of 16.7 GHz using the effect of coherent pulsations of the carrier density. The achievable delay is shown to be limited by the short lifetime. The maximum time delay observed reflects an approximately two-fold increase of the group refractive index, corresponding to a time delay of approximately 20 % of the carrier (population) lifetime. The experimental observations are well-explained by a model accounting for the absorption saturation in the waveguide, when using a lifetime that depends on the reverse bias.Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies slow-down of light by a factor of two in a semiconductor waveguide at room temperature with a bandwidth of 16.7 GHz using the effect of coherent pulsations of the carrier density. The achievable delay is shown to be limited by the short lifetime. The maximum time delay observed reflects an approximately two-fold increase of the group refractive index, corresponding to a time delay of approximately 20 % of the carrier (population) lifetime. The experimental observations are well-explained by a model accounting for the absorption saturation in the waveguide, when using a lifetime that depends on the reverse bias.

Conference on Lasers and Electro-OpticsJan 1, 20051 citation

Slow light and voltage control of group velocity in resonantly coupled quantum wells

Pavel Ginzburg, Meir Orenstein

We analyze slow light propagation in a coupled semiconductor quantum wells system exhibiting tunneling induced transparency. A group index as high as 85, for simple applicable GaAs/AlGaAs quantum wells structures, is predicted. Using DC voltage, the resonant tunneling rate can be altered and the related group index can be controlled over a broad range.

Optics ExpressJan 1, 200629 citations

Slow-light in semiconductor quantum wells

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Slow-light in semiconductor quantum wells

Abstract

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