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Optics Express

Slow light and voltage control of group velocity in resonantly coupled quantum wells

Pavel Ginzburg, Meir Orenstein

Published Jan 1, 2006• 29 citations
Publisher

Abstract

We analyze slow light propagation in a coupled semiconductor quantum wells system exhibiting tunneling induced transparency. A group index as high as 85, for simple applicable GaAs/AlGaAs quantum wells structures, is predicted. Using DC voltage, the resonant tunneling rate can be altered and the related group index can be controlled over a broad range.

DOI
10.1364/oe.14.012467

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Advances in Optical Sciences Congress•Jan 1, 2009•0 citations
We analyze slow light propagation in a coupled semiconductor quantum wells system exhibiting tunneling induced transparency. A group index as high as 85, for simple applicable GaAs/AlGaAs quantum wells structures, is predicted. Using DC voltage, the resonant tunneling rate can be altered and the related group index can be controlled over a broad range.
Tunneling-induced transparency in vertically coupled InGaAs/GaAs quantum dots using tunneling instead of pump laser, analogous to electromagnetically induced transparency in atomic systems, is studied. The interdot quantum coupling strength is tuned by static electric fields. The group velocity slow-down factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. For parameters appropriate to a 100 Gbits/s optical network, group velocities as low as 850 m/s are calculated. The scheme is expected to be useful to construct a variable semiconductor optical buffer based on electromagnetically induced transparency in vertically coupled InGaAs/GaAs quantum dots controlled by electric fields.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands. The intersubband transitions exhibit high dispersion at zero absorption, which leads to the slow light velocity in this medium as compared with that in vacuum ( c =3×10 8 ). The group velocity in a specific GaAs/AlGaAs sample is calculated to be v g = c /4.30. This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
We have investigated the dispersive properties of tunnelling-induced transparency in asymmetric double quantum well structures where two excited states are coupled by resonant tunnelling through a thin barrier in a three-level system of electronic subbands,The intersubband transitions exhibit high disperision at zero absorption,which leads to the slow light velocity in this medium as compared with that in vacuum(c=3×10^8).The group velocity in a specific GaAs/AlGaAs sample is calculated to be ug=c/4.30,This structure can be used to compensate for the dispersion and energy loss in fibre optical communications.
Electromagnetically-induced transparency (EIT) is observed and analyzed for the group velocity of a femtosecond light pulse interacting with GaAs/AlGaAs multiple quantum wells (MQWs) in a transient regime. The calculated slowdown factor of the group velocity inside the medium due to the dynamic refractive index change is approximately 2.10 x 10(3). We discuss the potential of EIT-induced slow light in GaAs/AlGaAs MQWs for ultrafast (approximately 210 GHz) all-optical information processing such as photon routing.
The authors demonstrate theoretically that there exists electromagnetically induced transparency in an asymmetric double quantum dot system using tunneling instead of pump laser. The group velocity slowdown factor is theoretically analyzed as a function of electron tunneling at different broadened linewidths. With feasible parameters for applications to a 100Gbits∕s optical network, numerical calculation infers group velocity as low as 300m∕s. The scheme is expected to be useful in constructing a variable semiconductor optical buffer based on electromagnetically induced transparency in an asymmetric double quantum dot controlled by voltage.