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Conference on Lasers and Electro-Optics

Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies

Jesper Mørk, Rasmus Kjær, M. van der Poel, Leif Katsuo Oxenløwe, Kresten Yvind

Published Jan 1, 2005• 1 citation
Publisher

Abstract

Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies slow-down of light by a factor of two in a semiconductor waveguide at room temperature with a bandwidth of 16.7 GHz using the effect of coherent pulsations of the carrier density. The achievable delay is shown to be limited by the short lifetime. The maximum time delay observed reflects an approximately two-fold increase of the group refractive index, corresponding to a time delay of approximately 20 % of the carrier (population) lifetime. The experimental observations are well-explained by a model accounting for the absorption saturation in the waveguide, when using a lifetime that depends on the reverse bias.

DOI
10.1109/cleo.2005.201832

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Experimental demonstration and theoretical analysis of slow light in a semiconductor waveguide at GHz frequencies slow-down of light by a factor of two in a semiconductor waveguide at room temperature with a bandwidth of 16.7 GHz using the effect of coherent pulsations of the carrier density. The achievable delay is shown to be limited by the short lifetime. The maximum time delay observed reflects an approximately two-fold increase of the group refractive index, corresponding to a time delay of approximately 20 % of the carrier (population) lifetime. The experimental observations are well-explained by a model accounting for the absorption saturation in the waveguide, when using a lifetime that depends on the reverse bias.
We experimentally demonstrate slow-down of light by a factor of three in a 100 microm long semiconductor waveguide at room temperature and at a record-high frequency of 16.7 GHz. It is shown that the group velocity can be controlled all-optically as well as through an applied bias voltage. A semi-analytical model based on the effect of coherent population oscillations and taking into account propagation effects is derived and is shown to well account for the experimental results. It is shown that the carrier lifetime limits the maximum achievable delay. Based on the general model we analyze fundamental limitations in the application of light slowdown due to coherent population oscillations.
We develop a model for slow light based on the coherent population oscillation of quantum dots at room temperature. With the absorption dip and corresponding variation of the refractive index due to the coherent population beating induced by the pump and probe signal, quantum dots can be used as a slow-light medium. Our theoretical model matches the experimental results very well. We also experimentally and theoretically demonstrate that both the forward-bias injection current and reverse-bias voltage can change the group index in a semiconductor quantum-dot waveguide. Our results indicate that quantum-dot devices can be potentially used as electrically and optically controllable slow light devices
We demonstrate room temperature optically and electrically controllable group delay using population oscillation in a quantum-dot (QD) semiconductor optical amplifier (SOA). A reduction of the group index up to 10% with a bandwidth of 13 GHz is achieved under different configurations of injection current and optical pump intensity. Our theoretical results based on population pulsation agree well with experimental data. We extract the linewidth enhancement factor and effective carrier diffusion coefficient of the QD SOA. We also observe slow light when the injection current is increased.
A theoretical analysis of slow and fast light effects in semiconductor optical amplifiers based on coherent population oscillations and including the influence of optical filtering is presented. Optical filtering is shown to enable a significant increase of the controllable phase shift experienced by an intensity modulated signal traversing the waveguide. The theoretical model accounts for recent experimental results and is used to analyze and interpret the dependence on material and device parameters. Furthermore analytical approximations are derived using a perturbation approach and are used to gain a better physical understanding of the underlying phenomena.
We demonstrate room-temperature slow light that is electrically and optically controllable by using a quantum-dot (QD) semiconductor optical amplifier (SOA) at zero and low bias below the transparency current. The absorption spectrum of the QD SOA exhibits a spectral dip with a corresponding group-index dispersion and group delay owing to coherent population oscillation caused by the interaction of pump and probe laser light near resonance of the first heavy-hole-conduction-state transition. At an optical pump power of approximately 0.3 mW inside the single-mode waveguide without current injection, a group-index change of 3.0 with a bandwidth of 2 GHz was measured. This group-index change can be controlled by injection of electrical current and by changing the optical pump power.