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Solid State Communications

Rabi oscillations in two-level semiconductor systems

Humberto Siqueira Brandi, Andrea Latge, Zdenka Barticevic, L. E. Oliveira

Published May 27, 2005• 9 citations
Publisher
DOI
10.1016/j.ssc.2005.05.015

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We propose a mechanism to explain the nature of the damping of Rabi oscillations with an increasing driving-pulse area in localized semiconductor systems and have suggested a general approach which describes a coherently driven two-level system interacting with a dephasing reservoir. Present calculations show that the non-Markovian character of the reservoir leads to the dependence of the dephasing rate on the driving-field intensity, as observed experimentally. Moreover, we have shown that the damping of Rabi oscillations might occur as a result of different dephasing mechanisms for both stationary and nonstationary effects due to coupling to the environment. Present calculated results are found in quite good agreement with available experimental measurements.
The optical resonance of a three-level system of the strongly correlated electrons in the two-level semiconductor quantum dot interacting with the linearly polarized monochromatic electromagnetic radiation is studied. With the application of the Green function method the expressions of the state vectors and the energies of the stationary states of the system in the regime of the optical resonance are derived. The Rabi oscillations of the electron populations at different levels as well as the Rabi splitting of the peaks in the photon emission spectra are investigated. PACS numbers: 71.35.-y, 78.55.-m, 78.67.Hc Keywords: quantum dot, optical resonance, Rabi oscillation, population flopping AJSTD Vol.23(3) pp.161-181 (2006)