Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.

cond-mat.mes-hallCross-listedarXiv:2608.08475Aug 11, 2026

Anharmonic oscillator model for driven and vacuum-field Rabi oscillations in semiconductor structures

S. Rudin, T. L. Reinecke

APSMar 1, 20010 citations

B_0

along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At

B_0=2

T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.