Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.Spin-photon interfaces are essential for communications between distant spin qubits in quantum technologies, but the interband optical excitation can also damp electrically driven hole-spin Rabi oscillations in semiconductor self-assembled quantum dots (SAQDs). We report a device-level modeling workflow that integrates realistic SAQD geometry and multiband electronic-structure analysis with models of electrically driven spin control, interband optical transitions, and open-system dynamics. This workflow enables device-level estimation of Rabi-oscillation damping arising from repeated interband absorption-emission cycles. As an example, for a gated GaAs SAQD subjected to a uniform magnetic field $B_0$ along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At $B_0=2$ T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.

cond-mat.mes-hallCross-listedarXiv:2608.08475Aug 11, 2026

Observation of Rabi oscillations between Bloch bands in an optical potential

Martin C. Fischer, Kirk W. Madison, Qian Niu +1 more

We report an experimental study of atomic motion in the Bloch band of a periodic potential. Our system consists of cold sodium atoms in a far detuned standing wave of near resonant light. We prepare the atoms in the lowest motional band, and then impose phase modulation in order to drive interband transitions. We observe Rabi oscillations between the first and second band as a function of modulation intensity and frequency. We also observe damped oscillations of the population as a function of modulation frequency, which are primarily due to a spread in Rabi frequencies over the Bloch band.We report an experimental study of atomic motion in the Bloch band of a periodic potential. Our system consists of cold sodium atoms in a far detuned standing wave of near resonant light. We prepare the atoms in the lowest motional band, and then impose phase modulation in order to drive interband transitions. We observe Rabi oscillations between the first and second band as a function of modulation intensity and frequency. We also observe damped oscillations of the population as a function of modulation frequency, which are primarily due to a spread in Rabi frequencies over the Bloch band.

Physical Review AOct 1, 199857 citations

Resonant modification of the Rabi oscillations of a two-level system

И. Д. Феранчук, А. В. Леонов

Physics Letters ASep 17, 200916 citations

Optical Stark effect in double-resonance conditions in semiconductor nanostructures

E. Yu. Perlin, Федоров Анатолий Валентинович

The theory of the optical Stark effect is developed for quantum-size structures. The effect is due to the interaction of the electron system with intense light, whose frequency, (omega) , is in resonance between two subbands in the conduction band. The probe light of the frequency (Omega) falls in resonance with the adjacent transition between the ground state and the state with an electron-hole pair. In the quasi-steady-state mode, the singularities in the interband (Omega) -light absorption spectra are related to the critical points of the bands, rearranged by the (omega) - light. The shape of the higher conduction band can be evaluated from the spectral positions of the singularities. In the case of two-photon interband transitions, a sharp dependence of the absorption on the light intensity is predicted. In the non-steady-state mode, the probe beam consists of two femtosecond (Omega) -light pulses following each other with the delay time, (tau) d. The dependence of energy, absorbed from the second pulse, on the (tau) d value is calculated. Under the (omega) -pumping, one of the two phenomena should be observed, depending on the type of band structure, namely, the decay of the induced polarization with the characteristic time approximately 1/(omega) R or oscillations with the frequency approximately (omega) R, where (omega) R is the Rabi frequency. The principal effect, controlling the decay of the Rabi oscillations, is the spreading of the packet of states generated by the (Omega) -light pulse.The theory of the optical Stark effect is developed for quantum-size structures. The effect is due to the interaction of the electron system with intense light, whose frequency, (omega) , is in resonance between two subbands in the conduction band. The probe light of the frequency (Omega) falls in resonance with the adjacent transition between the ground state and the state with an electron-hole pair. In the quasi-steady-state mode, the singularities in the interband (Omega) -light absorption spectra are related to the critical points of the bands, rearranged by the (omega) - light. The shape of the higher conduction band can be evaluated from the spectral positions of the singularities. In the case of two-photon interband transitions, a sharp dependence of the absorption on the light intensity is predicted. In the non-steady-state mode, the probe beam consists of two femtosecond (Omega) -light pulses following each other with the delay time, (tau) d. The dependence of energy, absorbed from the second pulse, on the (tau) d value is calculated. Under the (omega) -pumping, one of the two phenomena should be observed, depending on the type of band structure, namely, the decay of the induced polarization with the characteristic time approximately 1/(omega) R or oscillations with the frequency approximately (omega) R, where (omega) R is the Rabi frequency. The principal effect, controlling the decay of the Rabi oscillations, is the spreading of the packet of states generated by the (Omega) -light pulse.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIEJun 10, 19961 citation

B_0

along the growth direction of the SAQD, we predict the Rabi frequency of the hole spin qubit and its damping under external illumination. At

B_0=2

T, the calculations yield a hole-spin Rabi frequency of 37.3 MHz. When the electrically driven SAQD is illuminated by a broadband LED centered at a wavelength of 790 nm, increasing the optical power from 0.3 to 1.5 mW shortens the Rabi-oscillation decay time from 90.3 to 17.5 ns. Increasing the SAQD height reduces the electron-hole overlap and thus the emission rate, but the resulting redshift moves the interband transitions into stronger spectral overlap with the LED spectrum, thereby increasing the rate of repeated absorption-emission cycles and enhancing photon-induced Rabi-oscillation damping. The results show that geometry, spin-control conditions, and illumination spectrum should be co-optimized in semiconductor spin-photon devices.