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Soviet Journal of Quantum Electronics

Resonant excitation of excitons in a semiconductor by a laser with a variable pulse duration

Volkmar Brückner, Ya. T. Vasilev, В. С. Днепровский, E. А. Zhukov, D. G. Koshchug

Published Oct 31, 1975• 0 citations
Publisher

Abstract

Resonant excitation with variable-duration (10–11–10–9 sec) pulses of the second harmonic of neodymium laser radiation produced self-induced transparency and exciton saturation in a single crystal of CdS0.75Se0.25 (T = 80°K). Changes in the pulse shape typical of these two effects were observed after passage through this crystal and the velocity of pulses of τ T2 duration decreased ( T2 is the transverse relaxation time of excitons).

DOI
10.1070/qe1975v005n10abeh012075

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Resonant excitation with variable-duration (10–11–10–9 sec) pulses of the second harmonic of neodymium laser radiation produced self-induced transparency and exciton saturation in a single crystal of CdS0.75Se0.25 (T = 80°K). Changes in the pulse shape typical of these two effects were observed after passage through this crystal and the velocity of pulses of τ T2 duration decreased ( T2 is the transverse relaxation time of excitons).
The phenomenon of self-induced transparency (SIT) in the exciton range of the spectrum consists of the propagation through the crystal of solitary wave packets of coherent excitons and photons with anomalous small losses. In the running frame of reference at the site occupied by the soliton a single aperiodic transformation of photons into excitons and a reverse motion of the energy into the field takes place. The solutions of the SIT equations have been received in the slowly-varying amplitude approximation. Taking into account the phase modulation, the authors have shown the appearance of the branch of the carrier wave frequency with anomalous dispersion not only at the given pulse width but at the given pulse amplitude. They have also found the exact solution of the above mentioned equations taking into account the effect of saturation of the dipole momentum transition from the crystal ground state to the exciton state. It leads to the increasing of the soliton time width, to the decreasing of its amplitude and worsens the SIT observation.
Abstract Measuring the transform‐limited time‐resolved spectrum of a coherent laser pulse allows one to determine the amplitude and phase of the pulse electric field. From the reshaping of pulses transmitted through a thin semiconductor platelet in resonance with an exciton transition in case of the donor bound exciton in CdS the effects of coherent exciton–photon interaction for different laser intensities can be studied. While at low intensities the expected polariton beating connected with the formation of a 0π‐pulse is observed, at sufficiently high intensities changes in the pulse shape occur that are ascribed to self‐induced transparency of the bound exciton states.
Femtosecond-pulse propagation in resonantly excited semiconductors is investigated by numerically solving the semiconductor Maxwell-Bloch equations for plane waves. For excitation at the exciton resonance, it is shown that the pulse absorption exhibits a strongly nonlinear dependence on the input pulse area. Very long propagation distances for strong pulses are observed, but even when all dephasing processes have been neglected, no lossless propagation (self-induced transparency) was found. The influence of the electron-hole many-body effects, nonequilibrium carrier relaxation, and optical dephasing on the pulse-propagation dynamics is studied. The exchange interaction in the electron-hole plasma is shown to support large propagation distances. For excitation of the continuum states, the dependence of the absorption on the intensity of the input pulse is reduced due to the rapid carrier relaxation into quasiequilibrium distributions.
In this study, we experimentally study the dependence of the intensity of laser radiation incident on and transmitted through a layered InSe crystal. A picosecond YAG:Nd3+ laser with a parametric light generator was used as a light source, making it possible to generate light pulses with a duration of [Formula: see text]30 ps, tunable in frequency within the range of 0.75–1.5 μm. Optical bistability in the region of exciton resonance was detected in an InSe crystal at room-temperature under the picosecond YAG:Nd laser. It is shown that the decrease in absorption in the exciton resonance region is associated with the process of exciton–exciton interaction, shielding of excitons, and the Mott transition.
The form invariant coherent pulse propagation in semiconductors excited at 1s-exciton resonance is studied analytically using the reduced semiconductor Maxwell-Bloch equations. The sech-shaped pulse solution for excitonic self-induced transparency (SIT) is presented, showing significant difference in comparison with the well known SIT solution for non-interacting two-level systems. In contrast to 2π pulses in atomic systems, the phenomenon of SIT of interacting excitons in semiconductors occurs for the pulses of area 1.07π. Possible applications of the SIT solitons in semiconductor all-optical switching devices are discussed.