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International Journal of Modern Physics B

Optical bistability in layered InSe crystal

В. М. Салманов, A. G. Huseynov, Rovnag Rzayev, Ujal Rzayev, R. M. Mammadov, A. M. Aliyeva

Published Dec 3, 2022• 2 citations
Publisher

Abstract

In this study, we experimentally study the dependence of the intensity of laser radiation incident on and transmitted through a layered InSe crystal. A picosecond YAG:Nd3+ laser with a parametric light generator was used as a light source, making it possible to generate light pulses with a duration of [Formula: see text]30 ps, tunable in frequency within the range of 0.75–1.5 μm. Optical bistability in the region of exciton resonance was detected in an InSe crystal at room-temperature under the picosecond YAG:Nd laser. It is shown that the decrease in absorption in the exciton resonance region is associated with the process of exciton–exciton interaction, shielding of excitons, and the Mott transition.

DOI
10.1142/s0217979223501758

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In this study, we experimentally study the dependence of the intensity of laser radiation incident on and transmitted through a layered InSe crystal. A picosecond YAG:Nd3+ laser with a parametric light generator was used as a light source, making it possible to generate light pulses with a duration of [Formula: see text]30 ps, tunable in frequency within the range of 0.75–1.5 μm. Optical bistability in the region of exciton resonance was detected in an InSe crystal at room-temperature under the picosecond YAG:Nd laser. It is shown that the decrease in absorption in the exciton resonance region is associated with the process of exciton–exciton interaction, shielding of excitons, and the Mott transition.
An exciton-phonon mechanism for producing cavityless optical bistability is suggested. We consider the influence of the oscillating subsystem of a crystal on the absorption process of a laser wave in the region of exciton frequencies. It is shown that exciton-phonon interaction leads to nonlinear dependence of the absorption coefficient on the density of the exciton gas. The increase of absorption with increasing exciton density, however, is possible only in the frequency region on the long-wavelength tail of the exiton band. As a result, the exciton density of the crystal becomes a hysteresis function of external parameters (intensity of the incident wave, temperature, etc.). We calculate the absorption coefficient of excitons and define the frequency and temperature regions where optical bistability may exist. We analyze different relaxation mechanisms of excitons and explain the experimental results of observing optical bistability in different semiconductor crystals.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.
The influence of the exciton and phonon spectra of layer semiconductors on the conditions of optical bistability (OB) realization in the exciton absorption region is investigated by means of the Green function method. Using the 2H-polytype PbI2 as an example, it has been found that an effective exciton scattering by an oscillation of the bending wave (BW) type leads to the short wave shift of the OB realization region, the decrease of its size, the widening of the OB observing temperature region and to the shift of the hysteresis loop in the direction of greater intensities, the decrease of its height and width. The possibility of observing the polarizable OB, connected with the direction of spreading and the insident light polarization dependence ofthe layer crystal exciton spectra is substantiated in this paper.
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.
The impact of temperature, incident light polarization and a weak external magnetic field upon the conditions of optical bistability (OB) realization in the exciton absorption region of layer semiconductors has been investigated. With the 2Hpolytype PbI2 used as an example, the possibility of obtaining the OB realization region by changing the external factors has been shown. It has been also demonstrated that the change of these parameters can control the position and values of the absorption hysteresis loop of corresponding layer crystal excitation exciton zones.