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Quantum Electronics

Effect of α-factor on the dynamics of a bilayer semiconductor structure

Ihar Babushkin, Pavel V. Paulau, Natalia A. Loiko

Published Apr 30, 2004• 2 citations
Publisher

Abstract

A system consisting of two thin films interacting resonantly with a light field is considered. The model formulated for such a system is based on the approximation of two-level atoms and takes into account the peculiarities of the semiconductor medium, in particular, the effect of the ratio of dispersions of real and imaginary parts of the susceptibility (α-factor). It is shown that the inclusion of the α-factor leads to an additional nonlinearity and a considerable modification of the set of steady states of the system. The effect of α-factor on the dynamic regimes emerging in the system is discussed.

DOI
10.1070/qe2004v034n04abeh002680

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A system consisting of two thin films interacting resonantly with a light field is considered. The model formulated for such a system is based on the approximation of two-level atoms and takes into account the peculiarities of the semiconductor medium, in particular, the effect of the ratio of dispersions of real and imaginary parts of the susceptibility (α-factor). It is shown that the inclusion of the α-factor leads to an additional nonlinearity and a considerable modification of the set of steady states of the system. The effect of α-factor on the dynamic regimes emerging in the system is discussed.
We investigate the problem of resonant re flection and transmission of an ultrashort light pulse passing through a medium consisting of two-level atoms. We show that for a thin layer it is important to take into account the difference between the external macroscopic field and the field acting on the individual atoms within the medium. The local field correction leads to an inversion dependent resonant frequency. In thin layers this generates a new mechanism of nonlinear transparency induced by the dynamical frequency shift. When the excitation frequency is larger than the original resonant frequency, then the transmission of the layer exhibits bistable behavior.
The peculiarities of nonlinear transmission of ultrashort pulses of resonance laser radiation by a semiconductor thin film in the excitonic spectral region have been studied, taking into account the exciton-phonon interaction and concentration gain of the dipole moment of the excitonic transition. It has been shown that under exact resonance conditions the film transmits only the leading edge of the incident rectangular pulse and completely reflects the remaining part. For a nonzero off-resonance, a residual transmission occurs. A series of possibilities for transforming Gaussian pulses is predicted. The state equations for steady-state bistable transmission (reflection) have been derived, and the stability of the solutions has been studied. A theorem of areas, which predicts area restriction of the transmitted pulses, has been stated; namely, the transmitted pulse area cannot exceed π/2.
The role of near field effect is investigated in the boundary value problem of nonlinear resonant optics at the interaction of steady quasiresonant optical radiation with the film of two-level atoms. Dynamical detuning from resonance, nonlinear index of refraction, reflected and refracted waves are analyzed on the basis of solution of closed system of integral field equation and optical Bloch equations with account for discrete-continuous distribution of two-level atoms. An essential dependence of near field effect upon type of symmetry of atomic distribution is shown.