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Journal de physique

The dependence of the optical characteristics on light intensity in a semiconductor

Nguyen Ba An, Nguyen Trung Dan

Published Jan 1, 1989• 3 citations
Publisher

Abstract

The nonlinear optical characteristics of semiconductors are studied near the two-photon biexciton resonance. Optical bistability is shown to happen below this resonance at very low light intensities.
DOI
10.1051/jphys:019890050090100900

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The optical spectra of laser-excited semiconductors change with varying laser intensity. Close to exciton or biexciton resonances these optical nonlinearities are, e.g., large enough to obtain optical bistability. The cause for these large nonlinearities are many-body effects in the system of the electron-hole pair excitation. The use of nonequilibrium Green’s functions, or if a quasi-equilibrium exists of thermal Green’s functions, makes it possible to take radiative and Coulomb interactions consistently into account.
The strong optical nonlinearity of biexcitons in semiconductors necessitates a nonperturbative calculation of the nonlinear-optical susceptibility of the semiconductor and of the propagation equation of the light wave. Such calculations are possible for all light-beam geometries within a simple model in which excitons and biexcitons are treated quantum mechanically as bosons, with no reference to their internal structure. This simple model can account for most experimental observations, while when dephasing and population effects are considered it predicts the appearance of a dephasing-induced extra resonance analogous to that observed in gases or molecular crystals.