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Japanese Journal of Applied Physics

Optical Bistability in a Semiconductor Etalon with Nonlinear Integrated Mirrors

Tae‐Hoon Yoon, Dong-Seob Shin, Dug-Bong Kim, Jae Chang Kim, Sun Ho Kim

Published Aug 1, 1998• 2 citations
Publisher

Abstract

We have shown theoretically that a semiconductor etalon exhibits optically bistable behavior at a lower input light intensity when the two mirrors as well as the spacer layer are nonlinear.
DOI
10.1143/jjap.37.4397

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Optical bistability can be obtained in nonlinear materials either with Fabry-Perot mirrors or without external feedback. When a material is placed between partially reflecting mirrors, a nonlinear Fabry-Perot etalon is formed with the etalon providing an external feedback. Optical bistability and gating occur as a result of a shift in the Fabry-Perot peak when the light intensity is increased (or when a second laser beam is introduced into the cavity). Optical bistability with the external feedback mechanism has been observed in many semiconductors such as bulk GaAs, GaAs-AIGaAs multiple-quantum-well (MQW) structures, InSb, InAs, CdS, CdHgTe, GaSe, and CuCI.