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Journal de physique

Intensity-dependent absorption coefficient and refractive index near the band gap of highly excited semiconductors

Nguyen Ba An

Published Jan 1, 1990• 12 citations
Publisher

Abstract

The dependence of absorption coefficient α and refractive index n on the intensity of incident light are studied near the exciton resonance. The non-boson behaviour of excitons may serve as a mechanism of optical nonlinearity leading to bistable shapes of α and n above the resonance.
DOI
10.1051/jphys:019900051010100

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