Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review A

Saturation of interband transitions in semiconductors and the effect of optical bistability

J. Goll, Hermann Haken

Published Aug 1, 1983• 14 citations
Publisher

Abstract

Starting from a Hamiltonian which describes the interaction of the many-electron system of a crystal with the quantized light field, we derive nonlinear coupled equations of motion for the light-field amplitude, the electron-hole-pair amplitude, and the inversion. These equations yield the basis for the investigation of space-dependent nonlinear interaction effects between light and electrons in direct band-to-band transitions. With the aid of these equations we investigate the saturation behavior of direct band-to-band transitions for an incident monochromatic electromagnetic plane wave. We determine the nonlinear absorption coefficient and nonlinear refractive index. We compute the nonlinear transmissivity taking into account the boundary conditions at the end faces of the crystal and discuss the effect of optical bistability.

DOI
10.1103/physreva.28.910

Related papers

Band-edge nonlinearities in direct-gap semiconductors and their application to optical bistability and optical computing

Stephan W. Koch, Nasser N. Peyghambarian, H. M. Gibbs

Nonlinear optical properties of laser-excited semiconductors are discussed, and the applications to optical bistability and optical logic are reviewed. The physical origin of the nonlinearities is analyzed in terms of the many-body interactions in the system of electron-hole pairs, causing effects such as plasma screening of the Coulomb interaction, band-gap renormalization, and band filling. Theoretical results for absorption and refractive-index spectra are compared to experimental data obtained for room-temperature GaAs and other semiconductors. The experimental and theoretical results for dispersive optical bistability in semiconductors are summarized, and recent experiments on optical logic gating and pattern recognition are discussed.

Journal of Applied Physics•Jan 15, 1988•66 citations

Theory of Optical Bistability of Excitons

J. Goll, Hermann Haken

Abstract The saturation behaviour of excitons driven by an impinging electromagnetic plane wave is investigated. The nonlinear absorption coefficient and the nonlinear refractive index are determined. Taking care of the boundary conditions at the end faces of the crystal, the nonlinear transmissivity of the crystal is determined. The phenomenon of optical bistability is investigated taking into account standing wave effects and the influence of the detuning is discussed.

physica status solidi (b)•Oct 1, 1980•35 citations

Strong Light-Semiconductor Interactions in CdS, GaSe and Optical Bistability

В.С. Днепровский, A. I. Furtichev, V. Klimov +4 more

Changes in absorption and refractive index caused by the absorption of laser light in CdS and GaSe ("dynamic” nonlinearities which may lead to optical bistability /OB/) were investigated. Nonlinear effects may be very strong ("giant" nonlinearities) due to the resonant enhancement near the sharp band edge in the case of resonant excitation of excitons or interband transition.

Topical Meeting on Optical Bistability (OB)•Jan 1, 1988•0 citations

Optical bistability and related phase transitions in an electron–hole system

G. S. Tripathi, Subrat K. Shadangi, Sukanta K. Tripathy +1 more

Abstract Optical bistability (OB) is a phenomenon that describes a light induced phase transition in the non-equilibrium state. It is vital for all-optical computing and communication, serving as the basis for switches, logic gates, transistors, and memory. By enabling two stable light states, OB allows storage and fast switching, making high-speed, energy-efficient data processing possible. In this work we study the phenomenon in a two-band semiconductor in an optical cavity. Starting from a many-body Hamiltonian of optically generated electrons, holes and light-semiconductor interaction and Coulomb electron–electron, hole–hole and electron–hole interactions, we obtain the optical Bloch equations, in the mean field approximation, where relaxation is included phenomenologically. We obtain expressions for particle density, excitonic pair density and output intensity as non-linear functions of input light intensity. All these quantities show bistable behaviour, with two stable phases, and hysteresis in the non-equilibrium state. Equilibrium is ensured by introducing damping terms for the particle density amplitude, excitonic density amplitude, and cavity photon amplitude phenomenologically. The electron–hole pairs increase with light intensity, shows bistable features and then disappears with further increase in the input light intensity. The bistable behaviour becomes pronounced as we pass from low Coulomb interaction strengths to high Coulomb interaction strengths between electrons and holes. For sub-bandgap excitations, the output light versus incident light shows a complex behaviour.

Physica Scripta•May 27, 2026•0 citations

Theory of nonlinear refraction near the band edge of a semiconductor

Brian S. Wherrett, N. A. Higgins

Abstract Detailed comparisons are made of the results of two approaches to the problem of nonlinear refraction at frequencies just below the band edge in semiconductors. The physical origin o f the nonlinear dispersion is taken to be direct saturation of independent, T2-broadened band states in the first model discussed. In the second model the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large nonlinearity, X(3) ≈ 1 e. s. u., of importance in the field of dispersive optical bistability and consistent with experimental observations of bistability, two-beam differential gain and four-wave mixing.

Proceedings of the Royal Society of London A Mathematical and Physical Sciences•Jan 8, 1982•76 citations

Intensity-dependent absorption coefficient and refractive index near the band gap of highly excited semiconductors

Nguyen Ba An

The dependence of absorption coefficient α and refractive index n on the intensity of incident light are studied near the exciton resonance. The non-boson behaviour of excitons may serve as a mechanism of optical nonlinearity leading to bistable shapes of α and n above the resonance.

Journal de physique•Jan 1, 1990•12 citations
Starting from a Hamiltonian which describes the interaction of the many-electron system of a crystal with the quantized light field, we derive nonlinear coupled equations of motion for the light-field amplitude, the electron-hole-pair amplitude, and the inversion. These equations yield the basis for the investigation of space-dependent nonlinear interaction effects between light and electrons in direct band-to-band transitions. With the aid of these equations we investigate the saturation behavior of direct band-to-band transitions for an incident monochromatic electromagnetic plane wave. We determine the nonlinear absorption coefficient and nonlinear refractive index. We compute the nonlinear transmissivity taking into account the boundary conditions at the end faces of the crystal and discuss the effect of optical bistability.
Nonlinear optical properties of laser-excited semiconductors are discussed, and the applications to optical bistability and optical logic are reviewed. The physical origin of the nonlinearities is analyzed in terms of the many-body interactions in the system of electron-hole pairs, causing effects such as plasma screening of the Coulomb interaction, band-gap renormalization, and band filling. Theoretical results for absorption and refractive-index spectra are compared to experimental data obtained for room-temperature GaAs and other semiconductors. The experimental and theoretical results for dispersive optical bistability in semiconductors are summarized, and recent experiments on optical logic gating and pattern recognition are discussed.
Abstract Optical bistability (OB) is a phenomenon that describes a light induced phase transition in the non-equilibrium state. It is vital for all-optical computing and communication, serving as the basis for switches, logic gates, transistors, and memory. By enabling two stable light states, OB allows storage and fast switching, making high-speed, energy-efficient data processing possible. In this work we study the phenomenon in a two-band semiconductor in an optical cavity. Starting from a many-body Hamiltonian of optically generated electrons, holes and light-semiconductor interaction and Coulomb electron–electron, hole–hole and electron–hole interactions, we obtain the optical Bloch equations, in the mean field approximation, where relaxation is included phenomenologically. We obtain expressions for particle density, excitonic pair density and output intensity as non-linear functions of input light intensity. All these quantities show bistable behaviour, with two stable phases, and hysteresis in the non-equilibrium state. Equilibrium is ensured by introducing damping terms for the particle density amplitude, excitonic density amplitude, and cavity photon amplitude phenomenologically. The electron–hole pairs increase with light intensity, shows bistable features and then disappears with further increase in the input light intensity. The bistable behaviour becomes pronounced as we pass from low Coulomb interaction strengths to high Coulomb interaction strengths between electrons and holes. For sub-bandgap excitations, the output light versus incident light shows a complex behaviour.
Abstract Detailed comparisons are made of the results of two approaches to the problem of nonlinear refraction at frequencies just below the band edge in semiconductors. The physical origin o f the nonlinear dispersion is taken to be direct saturation of independent, T2-broadened band states in the first model discussed. In the second model the refraction associated with a dynamic Burstein-Moss shift of the absorption edge is considered. Both models predict an extremely large nonlinearity, X(3) ≈ 1 e. s. u., of importance in the field of dispersive optical bistability and consistent with experimental observations of bistability, two-beam differential gain and four-wave mixing.