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Applied Optics

Mirrorless optical bistability in a semiconductor-doped-glass plate as a result of oblique incidence

Kazuhiko Ogusu, yoshinori kaneko, Kenji Ishikawa

Published Jun 20, 1995• 4 citations
Publisher

Abstract

A procedure to obtain optical bistability in a third-order nonlinear film (or parallel plate) of low refractive index without any external mirrors is investigated both theoretically and experimentally. If an s-polarized light is incident obliquely at a large angle of incidence on the film, the generation of optical bistability can be expected because of the resulting increase in the reflectivity at the surfaces. Arigorous analysis of the stationary transmission characteristics of the nonlinear film is done for both positive and negative nonlinear coefficients with a plane-wave model. In the experimental demonstration, a CdS(x)Se(1-x)doped glass (Hoya Y-52) plate and a cw Ar(+) laser are used as the nonlinear material and the light source, respectively. It is shown that three operations of optical bistability, optical limiting, and differential gain can be easily obtained through adjustment of the angle of incidence as an initial detuning. The measured nonlinearity is thermal, and the magnitude and sign of the nonlinear refractive index are determined.

DOI
10.1364/ao.34.003413

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A procedure to obtain optical bistability in a third-order nonlinear film (or parallel plate) of low refractive index without any external mirrors is investigated both theoretically and experimentally. If an s-polarized light is incident obliquely at a large angle of incidence on the film, the generation of optical bistability can be expected because of the resulting increase in the reflectivity at the surfaces. Arigorous analysis of the stationary transmission characteristics of the nonlinear film is done for both positive and negative nonlinear coefficients with a plane-wave model. In the experimental demonstration, a CdS(x)Se(1-x)doped glass (Hoya Y-52) plate and a cw Ar(+) laser are used as the nonlinear material and the light source, respectively. It is shown that three operations of optical bistability, optical limiting, and differential gain can be easily obtained through adjustment of the angle of incidence as an initial detuning. The measured nonlinearity is thermal, and the magnitude and sign of the nonlinear refractive index are determined.
We have characterized the transverse spatial dependence of the real and imaginary parts of the complex nonlinear refractive index of a semiconductor doped glass filter, which exhibits absorptive bistability. Using the Z-scan technique, combined with an interferometric measurement of the integrated optical thickness, we are able to fit the observed experimental data assuming a quadratically varying transverse temperature profile in the sample. The transverse variations in the nonlinear refractive index do not scale directly with the size of the incident beam, but exhibit marked asymmetries depending on whether the incident beam is converging or diverging.
We report the observation of optical stability for a plane parallel semiconductor crystal which forms a Fabry-Perot interferometer using only the natural reflectivity of its surfaces. Nonlinear transmission is observed for cw laser intensities above ∼ 100 W/cm2 for radiation at 1895 cm−1 near the energy gap of InSb at 5 K. The effect is interpreted in terms of a very large intensity-dependent refractive index giving a 5λ/2 optical thickness change for an intensity of ∼2 kW/cm2. Clear bistability is seen in fifth-order interference, the first such observation above first order in an intrinsic, one-element system, in addition to regions exhibiting signal amplification. The same crystal also shows strong modulation of the transmission of one laser beam induced by a second, with real signal gain, thus demonstrating an ’’optical transistor.’’
We study the nonlinear optical bistability and multistability of a nonlinear ferroelectric (FE) Fabry-Perot (FP) interferometer assumed coated with partial dielectric mirrors on its interfaces. The FE material is considered to have an intensity-dependent refractive index where the third order nonlinear susceptibility χ ilmn (3) acts like Kerr coefficient. The nonlinear response of the FE medium is modeled by the Landau-Khalatnikov (LK) dynamical equation. Within a single frequency approximation, the nonlinear wave equation is written in terms of polarization P rather than the electric field E as the dependent variable. The resulting nonlinear polarization equation is numerically integrated across the FP film using the fourth order Runge-Kutta method. The behavior of the resulting polarization and transmission as a function of the field input intensity is investigated.
We have characterized the transverse spatial dependence of the real and the imaginary parts of the complex nonlinear refractive index of a semiconductor-doped glass filter that exhibits absorptive bistability. Using the Z-scan technique combined with an interferometric measurement of the integrated optical thickness, we are able to fit the observed experimental data, assuming a quadratically varying transverse temperature profile in the sample. The transverse variations in the nonlinear refractive index do not scale directly with the size of the incident beam but exhibit marked asymmetries that depend on whether the incident beam is converging or diverging.
Optical bistability in the presence of an optically induced absorption is observed when a thin 13-μm CdS sample is inserted between two mirrors of 90 % reflectivity, in our experiment, a modulated cw laser of ~15-mW peak power is tuned on each side of the free exciton resonance in CdS, and the transmission characteristics are studied. A theoretical calculation including both absorptive and dispersive effects is presented and good agreement is obtained. The absorption coefficient and the index of refraction of the material are connected by Kramers-Kronig relations. Propagation effects are taken into account. Sufficiently long pulses (40 ms) are considered to allow the thermally induced absorption to occur. For detunings above the free exciton resonance, we predict that counterclockwise hysteresis loops will first be observed as the intensity rises; for detunings below the free exciton resonance, only clockwise hysteresis loops are predicted. These predictions were experimentally verified. Power levels of the order of 5–10 mW were sufficient to observe bistability. Cavity effects were also observed.
It is shown theoretically that optical bistability will exist in a material whose optical absorption is more than linearly proportional to the degree to which the material is excited. No cavity or external feedback is required. The underlying principle of this bistability appears to be a generalization of several previous independent discussions of mirrorless bistabilities in specific physical systems. This bistability and associated differential gain are demonstrated experimentally using a thermal nonlinearity in a GaAs/GaAlAs multiple-quantum-well semiconductor. Theory and experiment show good agreement.