Journal of the Physical Society of Japan
A Semiconductor Optical Switch to Generate Sub-Poissonian Statistics in a Light Beam from the Down-Conversion Luminescence
Geraldo Alexandre Barbosa
Abstract
An optical device that utilizes a semiconductor switch and parametric luminescence from a non-inversion symmetric crystal is proposed to generate a light beam with sub-Poissonian number variance. Numerical estimates based on a simplified model indicate qualitative features of the optical switch and the signal intensity achieving sub-Poissonian variance. The calculation is exemplified with parameters from a GaAs–AlGaAs multiple-quantum well structure (MQW) within a Fabri-Perot cavity. Conjugated beams (for example, λ 1 =8322 Å and λ 2 =8230 Å) from the down-conversion luminescence in a KDP crystal are selected by a pinhole system and directed to the MQW. Non-linear refractive index changes are induced by fluctuations in the pump beam (λ 2 ) matched to an excitonic level ( N =1) of the bi-dimensional GaAs and modulates the cavity compensating for identical fluctuations in the signal beam (λ 1 ).