Electronics and Communications in Japan (Part II Electronics)
Noise characteristics of NbN nanobridge dc SQUIDs fabricated by field emission technique
Shiro Nagaoka, Akinobu Irie, Katsuyoshi Hamasaki, Tsutomu Yamashita
Abstract
Abstract NbN nanobridge dc SQUIDs were fabricated by the field evaporation method and their noise characteristics were evaluated. The fabricated device has a magnetic flux‐voltage conversion efficiency Φ of about 2.5 mV/Φ0 and hence the device has a higher gain than that of the tunneling‐type device with a resistive shunt. The energy resolution is as small as 40 h. When the fabricated SQUID was installed in an FLL circuit and the dynamic range was measured, it is found that an output is proportional to the input for the input magnetic flux of ±32Φ0 without removing the lock. The magnetic flux resolution of the FLL circuit used is 9 × 10−10 Φ02/Hz in the white noise region (at 3 kHz). In the low‐frequency region less than 100 Hz, the 1/f noise described by 5.8 × 10−8 (1/f)Φ02/Hz was observed. This value of the magnetic flux resolution is large by one order of magnitude than that inherent to the device and the noise of the electronics is predominant.