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Chemical Physics

Towards an understanding of escape rate and state dependent diffusion for a quantum dissipative system

Anindita Shit, Sudip Chattopadhyay, Jyotipratim Ray Chaudhuri

Published Jun 26, 2011• 11 citations
Publisher
DOI
10.1016/j.chemphys.2011.06.002

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A two-step transition model describing phase diffusion and switching process in underdamped Josephson junctions is discussed. The model takes into account the phase particle's escape rate out of the potential well and transition rate from phase diffusion to the running state. Using as examples the experimental switching current distributions of two Nb/AlO x /Nb junctions of different sizes fabricated on the same chip, we extract the transition rate, which turns out to follow the predicted Arrhenius law in the thermal regime but is greatly enhanced when macroscopic quantum tunneling becomes the dominant escape mechanism. Our results show the validity of applying the model to obtain the transition rate out of the phase diffusion state into the running state from measured switching current distribution of underdamped Josephson junctions. The temperature and bias-current dependent data provide strong evidence for phase diffusion in both thermal and quantum regimes.
Motivated by recent experimental progress to readout quantum bits implemented in superconducting circuits via the phenomenon of dynamical bifurcation, transitions between steady orbits in a driven anharmonic oscillator, the Duffing oscillator, are analyzed. In the regime of weak dissipation a consistent diffusion equation in the semiclassical limit is derived to capture the intimate relation between finite tunneling and reflection and bath induced quantum fluctuations. From the corresponding steady-state distribution an analytical expression for the switching probability is obtained. It is shown that a reduction of the transition rate due to finite reflection at the phase-space barrier is overcompensated by an increase due to environmental quantum fluctuations that are specific for diffusion processes over dynamical barriers. The scaling behavior of the rate is discussed and it is revealed that close to the bifurcation threshold the escape dynamics enters an overdamped domain such that the quantum-mechanical energy scale associated with friction even exceeds the thermal energy scale.
We have studied the temperature dependence of escape phenomena in various underdamped Josephson junctions (JJs). The junctions had different Josephson coupling energies E J which were relatively small, but larger than the charging energy E C . Upon increasing the temperature T , we first observe the usual cross-over between macroscopic quantum tunnelling and thermally activated (TA) behaviour at temperatures k B T ∼ ℏω p , where ω p is the plasma frequency of the junction. Increasing T further, the width of the switching current distribution has, counterintuitively, a non-monotonic temperature dependence. This can be explained by the novel cross-over from TA behaviour to underdamped phase diffusion. We show that this cross-over is expected to occur at temperatures such that k B T ∼ E J (1 − 4/π Q ) 3 /2, where Q is the quality factor of the junction at the plasma frequency, in agreement with experiment. Our findings can be compared with detailed model calculations which take into account dissipation and level quantization in a metastable well. Particular attention is paid to the sample with the smallest E J , which shows extensive phase diffusion even at the lowest temperatures. This sample consists of a dc-SQUID and a single JJ close to each other, such that the SQUID acts as a tunable inductive protection for the single junction from fluctuations of a dissipative environment. By varying the flux through the dc-SQUID, we present, for the first time, experimental evidence of the escape of a JJ from the phase diffusion regime to the free running state in a tunable environment. We also show that in the zero voltage state the losses mainly occur at frequencies near the plasma resonance.