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Physical Review A

Efficient scheme for implementing an N -qubit Toffoli gate by a single resonant interaction with cavity quantum electrodynamics

Xiao‐Qiang Shao, Ai‐Dong Zhu, Shou Zhang, Jean‐Soo Chung, Kyu-Hwang Yeon

Published Mar 28, 2007• 43 citations
Publisher

Abstract

A scheme for implementing a three-qubit Toffoli gate with atoms sent through a microwave cavity is proposed by choosing nonidentical coupling constants between the atoms and cavity. The scheme can be generalized to implement an $N$-qubit Toffoli gate and the gating time does not change with an increase of the number of qubits.

DOI
10.1103/physreva.75.034307

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A scheme for implementing a three-qubit Toffoli gate with atoms sent through a microwave cavity is proposed by choosing nonidentical coupling constants between the atoms and cavity. The scheme can be generalized to implement an NNN-qubit Toffoli gate and the gating time does not change with an increase of the number of qubits.
This paper proposes a scheme for realization of a three-qubit Toffoli gate operation using three four-level atoms by a selective atom-field interaction in a cavity quantum electrodynamics system. In the proposed protocol, the quantum information is encoded on the stable ground states of atoms, and atomic spontaneous emission is negligible as the large atom-cavity detuning effectively suppresses the spontaneous decay of the atoms. The influence of the dissipation on fidelity and success probability of the three-qubit Toffoli gate is also discussed. The scheme can also be applied to realize an N -qubit Toffoli gate and the interaction time required does not rise with increasing the number of qubits.