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Physical Review Letters

Sub-Poissonian Photon-State Generation by Stark-Effect Blockade of Emissions in a Semiconductor Diode Driven by a Constant-Voltage Source

M. Yamanishi, K. Watanabe, N. Jikutani, Masahito Ueda

Published Apr 29, 1996• 20 citations
Publisher

Abstract

It is predicted that sub-Poissonian photons can be generated without recourse to pump control in a tailor-made semiconductor diode. Monte Carlo simulations reveal that both photon noise and pump noise are drastically suppressed by automodulation of bimolecule-recombination lifetime due to the quantum-confined Stark effect and recharging effects. The noise of photon fluxes is reduced to below the standard quantum limit even under constant-voltage operation.

DOI
10.1103/physrevlett.76.3432

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We investigated extensively the sub-Poissonian-photon-state generation by the microscopic backward-pump (BP) process in a semiconductor heterojunction light-emitting diode (LED) under constant-voltage operation. In particular, the BP rate relative to the forward pump rate has been carefully evaluated from the dc characteristics of the LED and shown to depend strongly on the injection current and the device temperature. We then compare the experimental results of the photon-number squeezing performed at various temperatures in the constant-voltage-drive setup with the theoretical prediction estimated numerically using the parameter values determined from the dc measurements. As a consequence, it was proven that the observed squeezing at room temperature is successfully interpreted only in terms of the nonlinear BP model, while that at low temperature $(\ensuremath{\sim}100 \mathrm{K})$ is explained simply by the conventional model based on macroscopic Coulomb-blockade effect for the pump-noise suppression.

Physical review. B, Condensed matter•Apr 10, 2002•1 citation
It is predicted that sub-Poissonian photons can be generated without recourse to pump control in a tailor-made semiconductor diode. Monte Carlo simulations reveal that both photon noise and pump noise are drastically suppressed by automodulation of bimolecule-recombination lifetime due to the quantum-confined Stark effect and recharging effects. The noise of photon fluxes is reduced to below the standard quantum limit even under constant-voltage operation.
An alternative scheme for the generation of sub-Poissonian photons based on population-dependent spontaneous-emission lifetime in semiconductor microcavities is proposed and discussed theoretically. In the proposed scheme, the lifetime decreasing with electron population antibunches the emission events and, as a result, expands remarkably the frequency range for the suppression of spontaneous photon number fluctuation noise far beyond the inverse of the lifetime. The negative derivative of the lifetime is caused by a resultant effect of field screening due to populated electron-hole pairs and of quantum-confined Stark effect in biased quantum wells embedded in the microcavities. The proposed scheme may open up a new opportunity in extremely low-power (several photons) high-speed photonics.
Summary form only given. Among a variety of schemes for nonclassical light generation, the generation of sub-Poissonian photon-states with semiconductor lasers or light-emitting-diodes (LEDs) has been attracting much attention, primarily from engineering point of view. In this talk, we shall present our experimental results, manifesting substantial noise suppression of output photon fluxes below standard quantum limit (SQL) level from a single LED surprisingly without recourse to high-impedance circuit at room temperature. The observed squeezing is interpreted semiquantitatively in terms of our new model including effects of microscopic backward pump process.
We investigated extensively the sub-Poissonian-photon-state generation by the microscopic backward-pump (BP) process in a semiconductor heterojunction light-emitting diode (LED) under constant-voltage operation. In particular, the BP rate relative to the forward pump rate has been carefully evaluated from the dc characteristics of the LED and shown to depend strongly on the injection current and the device temperature. We then compare the experimental results of the photon-number squeezing performed at various temperatures in the constant-voltage-drive setup with the theoretical prediction estimated numerically using the parameter values determined from the dc measurements. As a consequence, it was proven that the observed squeezing at room temperature is successfully interpreted only in terms of the nonlinear BP model, while that at low temperature $(\ensuremath{\sim}100 \mathrm{K})$ is explained simply by the conventional model based on macroscopic Coulomb-blockade effect for the pump-noise suppression.