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Journal of Applied Physics

Ytterbium as a probe of the local lattice environment in GaxIn(1−x)P crystals

A. Kozanecki, Zbigniew Kaliński, J. Raczyńska, Jerzy M. Langer

Published Oct 1, 1989• 11 citations
Publisher

Abstract

Environmental effects in the intraimpurity emission of Yb3+(2F5/2-2F7/2 intracenter transition) in GaxIn1−xP (0<x<0.3) bulk crystals are reported. Cationic disorder manifests itself in the appearance of line splittings and substantial broadening of all the emission lines with increasing Ga contents. Spectra of the crystals with small Ga contents are dominated by emission from two types of centers. One, typical of InP:Yb, corresponds to Td symmetry, while the second is most likely due to a Yb center perturbed by the presence of a single Ga atom in the next-nearest-neighbor position (Yb-P4-In11-Ga).

DOI
10.1063/1.344135

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Journal of Applied Physics•Oct 15, 1994•20 citations
Environmental effects in the intraimpurity emission of Yb3+(2F5/2-2F7/2 intracenter transition) in GaxIn1−xP (0<x<0.3) bulk crystals are reported. Cationic disorder manifests itself in the appearance of line splittings and substantial broadening of all the emission lines with increasing Ga contents. Spectra of the crystals with small Ga contents are dominated by emission from two types of centers. One, typical of InP:Yb, corresponds to Td symmetry, while the second is most likely due to a Yb center perturbed by the presence of a single Ga atom in the next-nearest-neighbor position (Yb-P4-In11-Ga).
Ytterbium-doped InP emits a characteristic luminescence band near 1.0 \ensuremath{\mu}m, arising from intra-4f-shell transitions of Yb3+{\mathrm{Yb}}^{3+}Yb3+(4f13{\mathrm{f}}^{13}f13). A Zeeman analysis of the complex set of emission lines, in magnetic fields up to 22 T, reveals that the spectrum arises almost entirely from only one type of cubic Yb center, presumably on a substitutional cation site.
Photoluminescence excitation measurements were performed on InP: Yb, using a tunable LiF: F2+{\mathrm{F}}_{2}^{+}F2+​ colorcenter laser. The excitation spectra show that only one dominant Yb3+{\mathrm{Yb}}^{3+}Yb3+ (4f134{f}^{13}4f13) center is responsible for the complex set of emission lines observed in the 1.0-\ensuremath{\mu}m spectral range. With the combination of the present results with data obtained by photoluminescence experiments the observed emission lines can be ordered into a level scheme with a twofold-split initial (2F52^{2}F_{\frac{5}{2}}2F25​​) and a threefold-split (2F72^{2}F_{\frac{7}{2}}2F27​​) ground state.
The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.
A detailed spectroscopic study of Yb3+:CaF2{\text{Yb}}^{3+}:{\text{CaF}}_{2}Yb3+:CaF2​ is made by using laser selective excitation, low-temperature time-resolved fluorescence, and Raman techniques. Three dominant types of Yb3+{\text{Yb}}^{3+}Yb3+ isolated ion centers are identified at very low (0.03 at. (0.03\text{ }\text{at}\text{.}\text{ }%)(0.03 at.  dopant concentration: two of them with cubic and tetragonal symmetries and the third one not clearly identified but likely of trigonal symmetry. Fluorescence decays strongly differ from one site to another. The overall measured positions of the Stark sublevels of the 2F7/2{^{2}F}_{7/2}2F7/2​ and 2F5/2{^{2}F}_{5/2}2F5/2​ multiplets are satisfactorily explained by the crystal-field calculations. On the other hand, at higher dopant concentrations, only one dominant class of Yb3+{\text{Yb}}^{3+}Yb3+ centers occurs which corresponds to some hexameric cluster in which the Yb3+{\text{Yb}}^{3+}Yb3+ ions site in nearly tetragonal crystal-field environments and whose energy-level positions are discussed and compared with those previously reported in the literature.
A new, very efficient excitation mechanism of Yb intrashell 4f-4f emission in ZnS is reported. We show that the energy transfer from donor-acceptor pairs to Yb sites leads to Yb ionization (Yb3+⇒Yb2+), followed by capture of ionized carriers via the Yb3+ external excited state (bound exciton state), an energy transfer to the Yb3+ 4f shell, and Yb3+ 4f-4f radiative recombination. Since three centers (donor, acceptor, and Yb) participate in the energy transfer process in which Yb is first ionized, the above excitation mechanism is of three-center Auger transition nature. A similar excitation mechanism is expected for Eu, Sm, and Tm in ZnS, i.e., for these rare earth (RE) ions which can change their charge state from 3+ to 2+ in this lattice. For wider band-gap sulfides, such as CaS or SrS, this mechanism can be of importance also for other REs, such as, for example, Pr, Dy, and Er.
The photoluminescence spectra of Yb-implanted InP samples were studied under pulsed and cw excitations using an Ar+-ion laser (above band-gap excitation) at different temperatures and excitation intensities. The photoluminescence spectrum of the 4f transitions 2F5/2–2F7/2 consists of a sharp peak at 1001 nm and broader peaks in the spectral range between 1002.5 and 1010 nm. Time-resolved spectra were recorded at different temperatures. Using a tunable Ti:sapphire laser (above and below band-gap excitation) the photoluminescence excitation spectra were investigated for different emission lines. Study of the rise and decay time under intrinsic excitation (band to band) show that the rise time is a function of excitation intensity, which reflects an indirect excitation process for Yb3+. The experimental data are explained using a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps. The numerically simulated luminescence rise and decay times show a good general quantitative agreement with experimental data, over a wide range of generation rates. The photoluminescence spectra and decay time were also studied as a function of temperature. A quenching mechanism of ytterbium luminescence involving Yb and Fe ions is proposed. Finally, the electric-field quenching of InP:Yb photoluminescence is investigated.