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Physical review. B, Condensed matter

Photoluminescence excitation spectroscopy on InP: Yb

J. Wagner, J. C. Windscheif, Helmut Ennen

Published Nov 15, 1984• 26 citations
Publisher

Abstract

Photoluminescence excitation measurements were performed on InP: Yb, using a tunable LiF: ${\mathrm{F}}_{2}^{+}$ colorcenter laser. The excitation spectra show that only one dominant ${\mathrm{Yb}}^{3+}$ ($4{f}^{13}$) center is responsible for the complex set of emission lines observed in the 1.0-\ensuremath{\mu}m spectral range. With the combination of the present results with data obtained by photoluminescence experiments the observed emission lines can be ordered into a level scheme with a twofold-split initial ($^{2}F_{\frac{5}{2}}$) and a threefold-split ($^{2}F_{\frac{7}{2}}$) ground state.

DOI
10.1103/physrevb.30.6230

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Acta Physica Polonica A•Jan 1, 1995•0 citations
Photoluminescence excitation measurements were performed on InP: Yb, using a tunable LiF: F2+{\mathrm{F}}_{2}^{+}F2+​ colorcenter laser. The excitation spectra show that only one dominant Yb3+{\mathrm{Yb}}^{3+}Yb3+ (4f134{f}^{13}4f13) center is responsible for the complex set of emission lines observed in the 1.0-\ensuremath{\mu}m spectral range. With the combination of the present results with data obtained by photoluminescence experiments the observed emission lines can be ordered into a level scheme with a twofold-split initial (2F52^{2}F_{\frac{5}{2}}2F25​​) and a threefold-split (2F72^{2}F_{\frac{7}{2}}2F27​​) ground state.
The photoluminescence spectra of Yb-implanted InP samples were studied under pulsed and cw excitations using an Ar+-ion laser (above band-gap excitation) at different temperatures and excitation intensities. The photoluminescence spectrum of the 4f transitions 2F5/2–2F7/2 consists of a sharp peak at 1001 nm and broader peaks in the spectral range between 1002.5 and 1010 nm. Time-resolved spectra were recorded at different temperatures. Using a tunable Ti:sapphire laser (above and below band-gap excitation) the photoluminescence excitation spectra were investigated for different emission lines. Study of the rise and decay time under intrinsic excitation (band to band) show that the rise time is a function of excitation intensity, which reflects an indirect excitation process for Yb3+. The experimental data are explained using a kinetics model of energy transfer from the host lattice to the localized core excited states of rare-earth isoelectronic structured traps. The numerically simulated luminescence rise and decay times show a good general quantitative agreement with experimental data, over a wide range of generation rates. The photoluminescence spectra and decay time were also studied as a function of temperature. A quenching mechanism of ytterbium luminescence involving Yb and Fe ions is proposed. Finally, the electric-field quenching of InP:Yb photoluminescence is investigated.
Ytterbium-doped InP emits a characteristic luminescence band near 1.0 \ensuremath{\mu}m, arising from intra-4f-shell transitions of Yb3+{\mathrm{Yb}}^{3+}Yb3+(4f13{\mathrm{f}}^{13}f13). A Zeeman analysis of the complex set of emission lines, in magnetic fields up to 22 T, reveals that the spectrum arises almost entirely from only one type of cubic Yb center, presumably on a substitutional cation site.
In its regular charge state Yb 3+ , the ytterbium impurity in indium-phosphide has the electronic configuration 4f 13 , orbital momentum L = 3 and spin S = 1/2. Ground and excited states with the total spins J = 7/2 and J = 5/2, respectively, are formed by spin-orbit interaction. The EPR spectrum of the centre provides by resolved hyperfine interactions with the isotopes 171 Yb (nuclear spin I = 1/2, natural abundance α = 14%) and 173 Yb (I = 5/2, a = 16%) direct evidence for a one-ytterbium centre in a high-symmetry environment The optical transition between the excited and ground states with an energy around wavenumber σ = 9985 cm -1 (wavelength λ = 1.0015 μm) is easily observed in photoluminescence. A cubic crystal field lifts the eight-fold degeneracy of the ground state 2 F 7/2 into a Γ 6 doublet, a F, doublet and a Γ 8 quartet, whereas the excited state 2 F 5/2 is split into a Γ 7 doublet and a Γ 8 quartet. The ordering of the crystal-field levels is still a matter of discussion, both for the ground and excited spin-orbit multiplets. Several experiments providing information on the ordering will be briefly discussed. These include the luminescence intensity, temperature, hydrostatic stress and magnetic field effects on the optical spectrum, magnetic resonance, together with a crystal-field analysis. A conclusion towards a Γ 7 - Γ 6 - Γ 8 ordering for the ground state multiplet and Γ 7 - Γ 8 for the excited state multiplet, known as the Masterov model, will be drawn.
Abstract We report on the systematic characterization of the optical properties of diamond color centers based on Pb impurities. An ensemble photoluminescence analysis of their spectral emission was performed at different excitation wavelengths in the 405–520 nm range and at different temperatures in the 4–300 K range. The series of observed spectral features consist of different emission lines associated with Pb-related defects. Finally, a room-temperature investigation of single-photon emitters under 490.5 nm laser excitation is reported, revealing different spectral signatures with respect to those already reported under 514 nm excitation. This work represents a substantial progress with respect to previous studies on Pb-related color centers, both in the attribution of an articulated series of spectral features and in the understanding of the formation process of this type of defect, thus clarifying the potential of this system for high-impact applications in quantum technologies.
The rare-earth element, erbium (Er), was successfully diffused into GaAs and InP for the first time. Two intense and three weak sharp photoluminescence (PL) lines related with Er were observed at a wavelength of ∼1.55 μm both in GaAs and InP. It was found, for the first time, that the emission energy and the linewidth of the two intense Er-related PL lines do not depend on temperatures up to 220 K. This clearly indicates that these sharp emission lines are due to 4f-intracenter transitions in triply ionized erbium (Er3+) ions, and that the 4f orbitals are well shielded from a crystal field by the outer closed orbitals. Furthermore, it was found that the intensity ratio of the five emission lines from Er3+ is independent of the excitation power density. The results reveal that the Er3+ ion substitutes a cation site both in GaAs and InP, and that the five PL lines correspond to the transitions from the first excited state to the five crystal-field-split ground states of Er3+ ion with a tetrahedral (Td) symmetry.