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AIP conference proceedings

Side-gate controlled electrical properties of superconducting quantum interference device coupled with self-assembled InAs quantum dot

Sunmi Kim, R. Ishiguro, M. Kamio, Y. Doda, Eiichiro Watanabe, D. Tsuya, Kenji Shibata, Kazuhiko Hirakawa, Hideaki Takayanagi, Jisoon Ihm, Hyeonsik Cheong

Published Jan 1, 2011• 1 citation
Publisher
DOI
10.1063/1.3666414

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We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we directly observe a π phase shift in the current phase relation and the negative supercurrent indicating π junction behavior by not only tuning the energy level of SAQD by back-gate but also controlling the coupling between SAQD and electrodes by side-gate. Our results inspire the future quantum information devices which can link optical, spin, and superconducting state.
We study supercurrent in a single InAs self-assembled quantum dot contacted with superconducting leads and demonstrate that for regions where energy level spacing and charging energy are smaller than tunnel coupling, the supercurrent may be controlled by the degree of overlaps between energy levels, which is tunable using a side-gate electrode. In such regions, we find strong correlation between the supercurrent and the normal state conductance when the device parameters are tuned. In a Kondo regime with low Kondo temperature, we find that the scaling of the supercurrent and normal state conductance varies when the side-gate voltage is changed.
Connecting quantum processors over long distances using photon qubits would enable more complex quantum computing architectures and quantum networks. Recently a protocol to transfer a quantum state from a photonic qubit to a singlet-triplet spin qubit in GaAs/AlGaAs heterostructure has been theoretically demonstrated. In practice, the coherent transfer is facilitated by a hybrid device where a GaAs/AlGaAs gate-defined quantum dot (GDQD) is tunnel coupled to a self-assembled quantum dot (SAQD), in which a conversion between a photon state and a spin state takes place. This work addressed the three requirements of the optical-interface devices based on tunnel coupling between the GDQD and the SAQD: (i) a properly designed GaAs/AlGaAs heterostructure where the two-dimensional electron gas (2DEG) can be electrically tuned into resonance with the InAs SAQD; (ii) high-mobility 2DEG to form and operate a GDQD; (iii) precise alignment between the SAQD and the GDQD. It is proven that the InAs SAQD can be tuned to be charged, discharged, and resonant with the 2DEG by applying a local electric field.