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APS

Quantum Dot Superconducting Quantum Interference Devices with self-assembled InAs

R. Ishiguro, Sunmi Kim, Eichiro Watanabe, Daiju Tsuya, Kenji Shibata, Kazuhiko Hirakawa, Hideaki Takayanagi

Published Mar 1, 2010• 0 citations
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We report the transport measurements on the InAs self-assembled quantum dots (SAQDs) which have a unique structural zero-dimensionality, coupled to a superconducting quantum interference device (SQUID). Owing to the SQUID geometry, we directly observe a π phase shift in the current phase relation and the negative supercurrent indicating π junction behavior by not only tuning the energy level of SAQD by back-gate but also controlling the coupling between SAQD and electrodes by side-gate. Our results inspire the future quantum information devices which can link optical, spin, and superconducting state.
We study supercurrent in a single InAs self-assembled quantum dot contacted with superconducting leads and demonstrate that for regions where energy level spacing and charging energy are smaller than tunnel coupling, the supercurrent may be controlled by the degree of overlaps between energy levels, which is tunable using a side-gate electrode. In such regions, we find strong correlation between the supercurrent and the normal state conductance when the device parameters are tuned. In a Kondo regime with low Kondo temperature, we find that the scaling of the supercurrent and normal state conductance varies when the side-gate voltage is changed.