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Applied Physics Letters

Optical phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength

Yang Zhao, Cunkai Wu, Pankaj B. Shah, M. K. Kim, L. Ralph Dawson

Published Jul 19, 1993• 2 citations
Publisher

Abstract

The observation of phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength is reported on. The effective nonlinearity of the sample used in our experiments was measured to be χ(3)=10−7 esu. The nonlinearity is induced by the saturation absorption due to band filling and exciton bleaching. The saturation intensity is 1.3 kW/cm2.

DOI
10.1063/1.110078

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The observation of phase conjugation in InGaAs/GaAs multiple quantum wells at 1.06 μm wavelength is reported on. The effective nonlinearity of the sample used in our experiments was measured to be χ(3)=10−7 esu. The nonlinearity is induced by the saturation absorption due to band filling and exciton bleaching. The saturation intensity is 1.3 kW/cm2.
An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.
We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 Å well width, and with x=0.57 and 96 Å well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.
The saturation behavior of the nonlinear index δnNL in the band tail of GaAs/AlGaAs multiple quantum wells is experimentally studied in quasi-steady state and in a low absorption region (below 300 cm−1), where dispersive optical bistability is observed. Measurements at different detunings from the exciton resonance allow us to study the absorption dependence of the saturation parameters. The saturation intensity IS is found inversely proportional to the linear absorption coefficient, while the saturating nonlinear index δnS is approximately constant. This evidences that the nonlinear index saturation is due to a saturation of the carrier density versus light intensity, due to the saturation of the band tail absorption itself.
Absorption spectra of strained InGaAs/InP quantum wells exhibit a single, unusually large exciton feature. 60% quenching is obtained for 4.3 mW Nd:YAG effective pump power at a wavelength of 1.064 mu m. A simple two-level formula fits well the behaviour at the exciton peak, and absorption spectra are reasonably approximated by a standard two-dimensional exciton model. Saturation intensities calculated with these techniques range around 200 W cm-2. Finally the Kramers-Kronig relations are used to calculate the associated refractive index change.