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Applied Physics Letters

Origin of the nonlinear index saturation in the band tail absorption region of GaAs/AlGaAs multiple quantum wells

Bruno G. Sfez, J. L. Oudar, Robert Kuszelewicz, D. Pellat

Published Mar 9, 1992• 10 citations
Publisher

Abstract

The saturation behavior of the nonlinear index δnNL in the band tail of GaAs/AlGaAs multiple quantum wells is experimentally studied in quasi-steady state and in a low absorption region (below 300 cm−1), where dispersive optical bistability is observed. Measurements at different detunings from the exciton resonance allow us to study the absorption dependence of the saturation parameters. The saturation intensity IS is found inversely proportional to the linear absorption coefficient, while the saturating nonlinear index δnS is approximately constant. This evidences that the nonlinear index saturation is due to a saturation of the carrier density versus light intensity, due to the saturation of the band tail absorption itself.

DOI
10.1063/1.107392

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Applied Physics Letters•Jul 19, 1993•2 citations
The saturation behavior of the nonlinear index δnNL in the band tail of GaAs/AlGaAs multiple quantum wells is experimentally studied in quasi-steady state and in a low absorption region (below 300 cm−1), where dispersive optical bistability is observed. Measurements at different detunings from the exciton resonance allow us to study the absorption dependence of the saturation parameters. The saturation intensity IS is found inversely proportional to the linear absorption coefficient, while the saturating nonlinear index δnS is approximately constant. This evidences that the nonlinear index saturation is due to a saturation of the carrier density versus light intensity, due to the saturation of the band tail absorption itself.
An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.
We report on an experimental study of the origin of the nonlinearities and the size of the nonlinear index at various wavelengths close to the exciton resonance and the material band gap. It is concluded that for intensities required for optical bistability, the nonlinearity is mainly excitonic for MQWs with well sizes W of 50 and 152 Å which are either smaller or slightly larger than the exciton radius a. For 299-Å MQW, (W ≃ 2a), where the MQW behaves more like bulk but still has distinct excitonic features, the nonlinearity is due to the combination of exciton screening, band filling, and screening of the continuum states. For bulk GaAs, the effect of exciton is comparatively small and the latter two effects are responsible almost equally for the change in the refractive index. The measured nonlinear indices are rather similar for all these samples with the bulk GaAs and 299-Å MWQ exhibiting slightly larger Δn (change in index) for similar carrier densities (or for similar light intensities). The 50-Å MQW has a slightly smaller value of nonlinear index because the nonlinearity which in this sample is due to the saturation of the exciton resonance occurs at higher excitation intensities due to larger exciton binding energy.
Semiconductor multiple quantum well structures exhibit very large, room temperature, nonlinear refractive effects associated with resolvable excitonic features [1]. These nonlinearities may find use in all-optical devices if sufficient refractive index change can be achieved before the exciton completely saturates [2]. A unique aspect of band gap resonant optical, nonlinearities in quantum wells is the spatial confinement of the generated carriers within the layers. We have exploited the excitonic refractive nonlinearity in GaAs/AlGaAs multiple quantum wells in two separate degenerate four wave mixing configurations. These compare the intra-well and cross-well contributions to highly anisotropic carrier diffusion and also allow measurement of carrier relaxation rates and the saturation of the excitonic nonlinear refraction with increasing intensity.
An analysis of static room-temperature-operation characteristics of a reflection-mode semiconductor multiple-quantum well etalon by a simplified two-level system formula of optical nonlinear properties and a computer simulation is presented. In the calculation for a GaAs/AlGaAs multiple-quantum-well etalon using the parameters reported in experimental measurement, it is shown that the very large excitonic optical nonlinearity is not effectively utilized for the optical bistable operation. This occurs because the effective positive-feedback mechanism which increases the etalon internal light intensity is suppressed when a hardly saturable background interband absorption tail is larger than a few thousand cm/sup -1/ at a wavelength where the large excitonic dispersive nonlinearity is observed.>
The transmission of 500 ns pulses through GaAs-AlGaAs heterostructures has been studied as a function of light intensity and wavelength. The intrinsic exciton absorption can be modeled by the sum of a small unsaturable background and a dominant term which saturates as a Bloch resonance. Corrections for the Gaussian transverse spatial profile and finite optical thickness lead to 150 W/cm/sup 2/ for the uniform-plane-wave saturation intensity for an optically thin GaAs exciton transition. The nearly Bloch-like saturation curve does not imply that the free exciton transition is a simple saturable two-level system, but does suggest that it saturates as a homogeneously broadened line.