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Chinese Physics Letters

Intersubband Third-Order Nonlinearities in a GaAs/AlGaAs Step Quantum Well Structure by Phase Conjugation Method

Ma Jianwei, Zhenghao Chen, Cui Dafu, Lü Hui-Bin, Meng He, Yang Guozhen

Published Nov 1, 1995• 1 citation
Publisher

Abstract

In this letter, we present the observation of phase conjugation at 9.27 μm in a GaAs/AlGaAs multiple step quantum well structure. The response is caused by the nearly resonant intersubband transition. The magnitude of χ (3) determined by this phase conjugation method is about 8 × 10 -5 esu and the phase conjugate reflectivity η is about 6 × 10 -3 uncorrected for Fresnel reflections.

DOI
10.1088/0256-307x/12/11/009

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In this letter, we present the observation of phase conjugation at 9.27 μm in a GaAs/AlGaAs multiple step quantum well structure. The response is caused by the nearly resonant intersubband transition. The magnitude of χ (3) determined by this phase conjugation method is about 8 × 10 -5 esu and the phase conjugate reflectivity η is about 6 × 10 -3 uncorrected for Fresnel reflections.
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We investigate the interband difference-frequency-generation process arising from the three-wave interaction of resonant interband and intersubband coupling lights by theoretical estimation of the linear and the nonlinear susceptibilities of an asymmetric AlGaAs–GaAs quantum well. The three-level quantum-well system is analyzed by the perturbational density-matrix approach. The effect of the variation of carrier density in the quantum well on the interband mixing process is also considered. The nonlinear polarization induced by the intersubband coupling field is significantly enhanced in the case of doped structures. The peak second-order susceptibility estimated at the difference frequency is more than 2 orders of magnitude larger, whereas the coupling-field-induced third-order susceptibility is more than 4 orders of magnitude larger than that of bulk GaAs.
In this article, we have investigated the optical properties of intersubband transitions in an asymmetric AlGaAs/GaAs coupled quantum wells system. We solved the Schrödinger equation numerically using homemade finite difference codes to determine the electronic structure. The susceptibilities were calculated in frame of density matrix equations. The effect of relative phase variation between applied fields, on the linear absorption coefficients, relative refractive index changes, and group velocity has been investigated. The results show that the linear optical properties are extremely phase-dependent. By adjusting the phase, it is possible to obtain absorption curves with dispersion-like profile and vice versa.