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Applied Physics Letters

Optical saturation of intersubband absorption in GaAs-AlxGa1−xAs quantum wells

François Henri Julien, Jean–Michel Lourtioz, N. Herschkorn, D. Delacourt, Jean-Paul Pocholle, Michel R. Papuchon, Richard Planel, G. Leroux

Published Jul 11, 1988• 110 citations
Publisher

Abstract

We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 Å well width, and with x=0.57 and 96 Å well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.

DOI
10.1063/1.100386

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•Jul 18, 1988•0 citations
We have investigated intersubband absorptions between the conduction ground state and the first excited state of two AlxGa1−xAs/GaAs/AlxGa1−xAs multiple quantum well structures with x=0.3 and 85 Å well width, and with x=0.57 and 96 Å well width. Small-signal measurements show absorption peaks at 10.45 and 10.15 μm, respectively. Under an intense resonant excitation from a pulsed CO2 laser, saturation of the intersubband absorption occurred. The saturation intensity is estimated to be 340±120 kW/cm2 for the first sample and 375±120 kW/cm2 for the second. From these values, we have deduced subband decay times of the order of 10.6±3.5 ps for the first sample and 15.5±5 ps for the second.
A two-color pump–probe study of bound-to-bound and bound-to-quasibound intersubband transitions in InGaAs/AlGaAs and GaAs/AlGaAs multiquantum wells (MQW), with transition energies near 250 meV has been performed. Electrons were optically excited from the lowest to the upper subband using short midinfrared pulses of intensities up to 108 W/cm2 from a dual optical parametric generator. Differential transmission spectra, taken with the weaker probe pulses, evidence homogeneous line broadening behavior. From the width of the coherence peak, centered near the pump frequency, and arising from a dynamic population grating, the upper state lifetime (bound-to-bound transition) was found to be 0.6 ps, in good quantitative agreement with absorption saturation data.
We resonantly excite the n=2 excitons at 8 K in 13 nm and 17.5 nm GaAs quantum wells using 0.5 ps pulses from a Ti-Sapphire laser and perform four wave mixing (FWM) measurements. The exciton dephasing time is deduced by fitting the FWM spectra to a numerical solution of the optical Bloch equations for the excitonic resonance. The finite pulse width and presence of small inhomogeneous broadening are taken into account. The homogeneous linewidth thus obtained at different low excitation intensities has a linear dependence on the intensity. The zero intensity intercept is essentially governed by the n=2 exciton lifetime due to intersubband relaxation, the pure transverse dephasing contribution being relatively less important. We deduce the exciton lifetime to be 0.9 ps and 2.6 ps for the 13 nm and 17.5 nm QWs, respectively.
In the past few years advance in nanofabrication techniques have made it possible to make well-like compound semiconductor structures of low nanometer size.In these structures,the state of the electron in the direction perpendicular to the length of the well is quantized with sufficiently large separation in energy levels and the motion of the electron parallel to the length is that of a quasi-free electron.One of the most remarkable properties of these one-dimensional electron system is that the optical transitions between the size-quantized subbands are feasible.The result shows there is a large optical nonlinearities in asymmetric quantum wells.The problem of optical saturation of intersubband absorption has recently attracted considerable attention.The problem is very important to the development of superlattice devices such as fast infrared detectors and(modulators) because one needs to know the range of input optical intensities for which linear operation is(possible.) The analytical expression of the linear and the third-order nonlinear optical intersubband absorption coefficients are obtained in Pschl-Teller wells using the density matrix formalism taking into account the(intrasubband) relaxation.Since there are two adjustable parameters κ and λ in Pschl-Teller wells,the shapes of the wells will change with the change of the parameters κ and λ,accordingly the linear and the third-order nonlinear optical absorption coefficients will change with the parameters κ and λ.It is shown that the optical absorption coefficient depends on the parameter,and the optical intensity strongly. The absorption saturation will occur with I increase.Numerical results are presented for a typical AlGaAs/GaAs Pschl-Teller well.
The nonlinear saturation of the excitonic absorbtion in a GaAs‐InxGa1−xAs multiple quantum well sample consisting of 80 wells was investigated in the vicinity of the excitonic resonance at 991 nm using a tunable titanium sapphire laser probe. This characterization yields a saturation intensity of less than 50 kW/cm2 and a maximum off‐resonance nonlinear refractive index of 6.42–10−7 cm2/W. This dispersion can lead to practical optically bistable etalons fabricated from these multiple quantum well structures.
Optical nonlinearities of Al(x)Ga(1-x)As/GaAs asymmetric coupled quantum wells within a p-i-n structure have been observed by using time-resolved spectroscopy. Under photoexcitation, exciton absorption lines exhibit spectral shifts of as much as approximately 1 meV. The recovery times of these spectral shifts are of the order of hundreds of picoseconds when the excitation photon is above the lowest exciton state but become less than 10 psec when excitation is below the lowest exciton state, indicating a virtual process. The behavior of these spectral shifts is consistent with the presence of a polarization induced by optical pumping. The polarization is believed to be due to the excitons that have nonvanishing electric dipole moments along the axis of the asymmetric coupled quantum wells.
Recent studies of the transient behavior of absorption saturation in low temperature Multiple Quantum Wells (MQW) samples have revealed a surprisingly fast recovery of absorption (within 10 ps at 15 K) after excitation by intense ultrashort light pulses1. This has been attributed to the effect of the large stimulated recombination rate caused by amplified spontaneous luminescence guided along the MQW structure, as confirmed by streak camera observations of the edge-emitted luminescence1, and by measurements of time-resolved luminescence spectra with subpicosecond resolution2. This effect could be used to increase the speed of optical gates based on absorption saturation or carrier-induced nonlinear refraction, but a more complete understanding of the mechanisms involved is clearly needed in order to evaluate the interest of this approach.