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Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE

All-optical memory based on a two-mode diode laser with optical feedback

Nicola Brandonisio, Patrycja Heinricht, Andreas Amann, S. Osborne, S. O'Brien

Published Apr 23, 2010• 0 citations
Publisher

Abstract

In this paper we numerically demonstrate that an optical memory can be based on a two-mode laser diode with optical feedback and injection in the short external cavity regime. For modelling this system we use a two-mode extension of the Lang-Kobayashi rate equations with gain saturation and optical injection. The parameters chosen are consistent with the simultaneous oscillation of the two modes in the free running laser, which is possible for frequency spacings greater than approximately 500 GHz at optical frequencies around 200 THz. For certain values of the system parameters, we have found a hysteresis loop between single-mode equilibrium states for increasing and decreasing feedback strength. Our simulations show that injected optical pulses can switch the system between single mode equilibrium states when the feedback parameters are fixed in this bistable region, demonstrating the function of the optical memory. This system has attractive features such as the absence of a holding beam and the symmetry between the two states of the memory element. These properties along with the external cavity length of 1 cm make the system an interesting candidate for optical integration.

DOI
10.1117/12.853903

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In this paper, optical bistability characteristics are demonstrated experimentally based on a dual-mode laser system comprising a multi-mode Fabry-Pérot laser diode (MMFP-LD) and a built-in feedback cavity formed by a fiber facet. The results show that two lasing modes with frequency separation of ∼0.58 THz and comparable peak powers can be achieved by judicious adjustment of the bias current and the operating temperature of the laser chip, which has a peak fluctuation of less than ∼1 dBm over a measurement period of one hour. A combination of appropriate external injection power and wavelength detuning can result in remarkable optical bistability in two oscillation modes, in which the resulting contrast ratio between the unlocked and locked states can be up to 30 dB, and the corresponding hysteresis loop width can be changed by controlling the side-mode injection power and the wavelength detuning.
Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.
Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.
Optical bistability of a locked-injected laser diode is analyzed when the frequency of injected light varies with the optical power of injected light, (i. e., frequency chirping) by modifying the rate equations. Using the new equations, we have analyzed the effect of external parameters such as frequency detuning, carrier injection rate, and also internal parameters such as cavity length and cavity refractive index on the steady-state output characteristics of the bistable laser diode. The dynamic response of the bistable laser diode with and without frequency chirping were compared.
Optical signal inverter and memory were demonstrated through a purely optical approach in a simple structure composed of a laser diode and an Er-doped YAG crystal.The intensity of an output laser transmitted through the Er:YAG was suddenly decreased by increasing the injection current to put the oscillation wavelength of the laser close to the central absorption peak of the Er:YAG at 787.6nm.In addition, the transmission of the Er:YAG versus injection current characteristics showed hysteresis and optical bistability.These effects were caused by the red shift and the hysteresis of the wavelength of the laser diode against the injection current.With the use of these effects, the optical signal inverter and memory were realized at a response time of 100ps.
We demonstrate a new scheme for realizing the Optical Bistability (OB) inside an all-fiber ring cavity with an external control field. In the absence of the external control field, the pump power is fixed below the threshold value of laser, and there is no laser in the cavity. However, when the control signal of 1505 nm to 1520 nm is injected into the cavity, laser begins to oscillate and OB appears. We found that the wavelength and power of the control signal can affect the OB behavior dramatically, which can be used to manipulate efficiently the threshold intensity and the hysteresis loop. We also give an explanation of the bistability phenomenon based on numerical simulations, which are agreed very well with our experimental results. Our scheme may provide some new possibilities for technological applications in optical power limiters, switches or memories.