Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Science

Toward the Realization of a Josephson Computer

S. Hasuo

Published Jan 17, 1992• 11 citations
Publisher

Abstract

High-quality Josephson junctions, with both electrodes made from niobium and with an aluminum-oxide insulating barrier, were introduced in 1983. This niobium junction is very stable, reliable, controllable, and reproducible. Because of these excellent characteristics, these junctions can be applied to large-scale integrated (LSI) circuits, such as microprocessors having a few thousand gates and a few kilobits of memory. These circuits operate much faster and consume less power than any semiconductor circuit now available. Integrated Josephson circuits are now being tested in a closed-cycle refrigerator. The next step is to design a special-purpose, small-scale Josephson computer and to demonstrate its high performance.

DOI
10.1126/science.255.5042.301

Related papers

High-speed Josephson processor technology

S. Hasuo, Seigo Kotani, A. Inoue +1 more

High-speed operation of Josephson processors is demonstrated. They are a 4-b microprocessor, a 4-b processor, and an 8-b digital signal processor. Key technologies to realize these circuits are described from the viewpoint of circuit design. The technologies are a high-speed logic gate, named MVTL (modified variable threshold logic), and a three-phase sinusoidal power supply system. The MVTL gate has a large operating margin and high sensitivity. The MVTL gate family consists of OR, AND, 2/3 majority (MJ), and timed inverter (TI). Using these gates a variety of processors have been designed. These processors operate with three-phase power. The waveform is sinusoidal with DC-offset. This power supply system needs no latch and regulator circuit. This makes the processor very simple, and thus results in high-speed operation. To fabricate these processors, niobium junctions are very important, because they are reliable, uniform, controllable, and reproducible. High-speed gates, three-phase power supplies, and niobium junctions are indispensable for high-speed Josephson processors.

IEEE Transactions on Magnetics•Mar 1, 1991•26 citations

A simple and robust niobium Josephson junction integrated circuit process

Andrew T. Barfknecht, Rich Ruby, H.L. Ko

A simple and robust process for fabricating low-T/sub c/ Josephson junction integrated circuits has been developed. The process is designed around the Nb/Al/sub 2/O/sub 3/-Al/Nb trilayer, and utilized nine masking steps to form two separate levels of trilayer Josephson junctions, as well as resistors, capacitors, and transmission lines. Materials used for interlayer dielectrics and passivation layers are silicon dioxide and silicon nitride formed by plasma-enhanced chemical vapor deposition (PECVD). The PECVD equipment yields a high deposition rate at moderate substrate temperatures. No degradation of the junction characteristics due to these depositions is seen. The measured loss tangent of this dielectric at 10 GHz using a parallel plate technique is 4.44*10/sup -4/. The dielectric constant of this material is 5.1 in the range of 50 to 400 GHz, measured using an on-chip resonator capacitively coupled to a single shunted Josephson junction. The physical quality of the oxide has been investigated using a variety of tests and has proven to be excellent. A variety of simple circuits using this process technology have been fabricated and tested. More complex circuits are currently under development.

IEEE Transactions on Magnetics•Mar 1, 1991•35 citations

High-Quality Ferromagnetic Josephson Junctions Based on Aluminum Electrodes

Antonio Vettoliere, Roberta Satariano, Raffaella Ferraiuolo +9 more

Aluminum Josephson junctions are the building blocks for the realization of superconducting quantum bits. Attention has been also paid to hybrid ferromagnetic Josephson junctions, which allow switching between different magnetic states, making them interesting for applications such as cryogenic memories, single-photon detectors, and spintronics. In this paper, we report on the fabrication and characterization of high-quality ferromagnetic Josephson junctions based on aluminum technology. We employed an innovative fabrication process inspired by niobium-based technology, allowing us to obtain very high-quality hybrid aluminum Josephson junctions; thus, supporting the use of ferromagnetic Josephson junctions in advanced quantum circuits. The fabrication process is described in detail and the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field) are reported. Here, we illustrate in detail the fabrication process, as well as the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field).

Nanomaterials•Nov 24, 2022•17 citations

A SIMPLE AND ROBUST NIOBIUM JOSEPHSON JUNCTION INTEGRATED CIRCUIT PROCESS A.T. Barflcnecht. R.C. Rubyt and H. Kot Conductus, Inc.

W. Maude Ave

A simple and robust process for fabricating low-Tc Josephson junction integrated circuits has been developed. The process is designed around the Nb/A1203-Al/Nb trilayer, and utilizes nine masking steps to form two separate levels of trilayer Josephson junctions, as well as resistors, capacitors, and transmission lines. Materials used for interlayer dielectrics and passivation layers are silicon dioxide and silicon nitride formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). The PECVD equipment that we use yields a high deposition rate at moderate substrate temperatures. We see no degradation of the junction characteristics due to these depositions. The measured loss tangent of this dielectric at 10 GHz using a parallel plate technique is 4.44 x 10-4. The dielectric constant of this material is 5.1 in the range of 50 to 400 GHz, measured using an on-chip resonator capacitively coupled to a single shunted Josephson junction. The physical quality of the oxide has been investigated using a variety of tests and has proven to be excellent. We have successfully fabricated and tested a variety of simple circuits using this process technology. Much more complex circuits are currently under development (Fig. 1).

•Jan 1, 1991•0 citations

Superconducting Multilayer Technology for Josephson Devices : Technology, Engineering, Physics, Applications

J. M. Meckbach

Within this book fabrication processes for high-quality Josephson junctions based on niobium and aluminum oxide as well as niobium nitride and aluminum nitride on various substrates are discussed. Techniques for achieving a planar chip topography and sub-µm lateral dimensions, aiding the realization of sophisticated Josephson devices such as SQUIDs, flux-flow oscillators and long Josephson junctions with artificial phase discontinuities, are presented in detail.

•Jan 1, 2013•2 citations

Niobium nitride Josephson junction process development

James M. Murduck, J. DiMond, C.Y. Dang +1 more

NbN/MgO/NbN tunnel junction fabrication has been developed using statistical experimental design for insertion into a Josephson LSI (large-scale integration) fabrication technology. Junction deposition conditions have been studied and correlated with structural characterization and junction I-V measurements. Josephson junctions with sum gaps as large as 5.0 mV and junction quality factor of 47 mV have been produced. Current density uniformity, a critical parameter in circuit design, has also been investigated. I/sub c/(O) uniformity at 4.2 K of a 4000 junction array was within sigma =3.1% and was +or-10% across 1 in/sup 2/. The utility of this junction process has been demonstrated by insertion into a standard circuit fabrication process that has produced logic circuit operation above 10 K.>

IEEE Transactions on Applied Superconductivity•Mar 1, 1993•7 citations
High-quality Josephson junctions, with both electrodes made from niobium and with an aluminum-oxide insulating barrier, were introduced in 1983. This niobium junction is very stable, reliable, controllable, and reproducible. Because of these excellent characteristics, these junctions can be applied to large-scale integrated (LSI) circuits, such as microprocessors having a few thousand gates and a few kilobits of memory. These circuits operate much faster and consume less power than any semiconductor circuit now available. Integrated Josephson circuits are now being tested in a closed-cycle refrigerator. The next step is to design a special-purpose, small-scale Josephson computer and to demonstrate its high performance.
High-speed operation of Josephson processors is demonstrated. They are a 4-b microprocessor, a 4-b processor, and an 8-b digital signal processor. Key technologies to realize these circuits are described from the viewpoint of circuit design. The technologies are a high-speed logic gate, named MVTL (modified variable threshold logic), and a three-phase sinusoidal power supply system. The MVTL gate has a large operating margin and high sensitivity. The MVTL gate family consists of OR, AND, 2/3 majority (MJ), and timed inverter (TI). Using these gates a variety of processors have been designed. These processors operate with three-phase power. The waveform is sinusoidal with DC-offset. This power supply system needs no latch and regulator circuit. This makes the processor very simple, and thus results in high-speed operation. To fabricate these processors, niobium junctions are very important, because they are reliable, uniform, controllable, and reproducible. High-speed gates, three-phase power supplies, and niobium junctions are indispensable for high-speed Josephson processors.
A simple and robust process for fabricating low-T/sub c/ Josephson junction integrated circuits has been developed. The process is designed around the Nb/Al/sub 2/O/sub 3/-Al/Nb trilayer, and utilized nine masking steps to form two separate levels of trilayer Josephson junctions, as well as resistors, capacitors, and transmission lines. Materials used for interlayer dielectrics and passivation layers are silicon dioxide and silicon nitride formed by plasma-enhanced chemical vapor deposition (PECVD). The PECVD equipment yields a high deposition rate at moderate substrate temperatures. No degradation of the junction characteristics due to these depositions is seen. The measured loss tangent of this dielectric at 10 GHz using a parallel plate technique is 4.44*10/sup -4/. The dielectric constant of this material is 5.1 in the range of 50 to 400 GHz, measured using an on-chip resonator capacitively coupled to a single shunted Josephson junction. The physical quality of the oxide has been investigated using a variety of tests and has proven to be excellent. A variety of simple circuits using this process technology have been fabricated and tested. More complex circuits are currently under development.
Aluminum Josephson junctions are the building blocks for the realization of superconducting quantum bits. Attention has been also paid to hybrid ferromagnetic Josephson junctions, which allow switching between different magnetic states, making them interesting for applications such as cryogenic memories, single-photon detectors, and spintronics. In this paper, we report on the fabrication and characterization of high-quality ferromagnetic Josephson junctions based on aluminum technology. We employed an innovative fabrication process inspired by niobium-based technology, allowing us to obtain very high-quality hybrid aluminum Josephson junctions; thus, supporting the use of ferromagnetic Josephson junctions in advanced quantum circuits. The fabrication process is described in detail and the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field) are reported. Here, we illustrate in detail the fabrication process, as well as the main DC transport properties at low temperatures (current-voltage characteristic, critical current as a function of the temperature, and the external magnetic field).
A simple and robust process for fabricating low-Tc Josephson junction integrated circuits has been developed. The process is designed around the Nb/A1203-Al/Nb trilayer, and utilizes nine masking steps to form two separate levels of trilayer Josephson junctions, as well as resistors, capacitors, and transmission lines. Materials used for interlayer dielectrics and passivation layers are silicon dioxide and silicon nitride formed by Plasma Enhanced Chemical Vapor Deposition (PECVD). The PECVD equipment that we use yields a high deposition rate at moderate substrate temperatures. We see no degradation of the junction characteristics due to these depositions. The measured loss tangent of this dielectric at 10 GHz using a parallel plate technique is 4.44 x 10-4. The dielectric constant of this material is 5.1 in the range of 50 to 400 GHz, measured using an on-chip resonator capacitively coupled to a single shunted Josephson junction. The physical quality of the oxide has been investigated using a variety of tests and has proven to be excellent. We have successfully fabricated and tested a variety of simple circuits using this process technology. Much more complex circuits are currently under development (Fig. 1).
NbN/MgO/NbN tunnel junction fabrication has been developed using statistical experimental design for insertion into a Josephson LSI (large-scale integration) fabrication technology. Junction deposition conditions have been studied and correlated with structural characterization and junction I-V measurements. Josephson junctions with sum gaps as large as 5.0 mV and junction quality factor of 47 mV have been produced. Current density uniformity, a critical parameter in circuit design, has also been investigated. I/sub c/(O) uniformity at 4.2 K of a 4000 junction array was within sigma =3.1% and was +or-10% across 1 in/sup 2/. The utility of this junction process has been demonstrated by insertion into a standard circuit fabrication process that has produced logic circuit operation above 10 K.>