Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Physical Review Letters

Resonant generation of biexcitons in a GaAs quantum well

D. J. Lovering, R. T. Phillips, Graham J. Denton, G.W. Smith

Published Mar 23, 1992• 157 citations
Publisher

Abstract

Generation of cold excitons in GaAs quantum wells is shown to lead to enhanced condensation to the biexciton state under cw illumination. Resonant two-photon absorption to the biexciton state in the same structure is found to account for a quantum beating phenomenon involving the biexciton and exciton states in a more complex three-level system than hitherto investigated.

DOI
10.1103/physrevlett.68.1880

Related papers

The influence of the resonant electromagnetic field on light absorption by exciton and biexciton in quantum wells

Nguyễn Hồng Quang, A. I. Bobrysheva

The influence is investigated of a resonant electromagnetic field on the light absorption by the exciton and biexciton in semiconductor quantum wells. The probabilities of exciton one-photon and biexciton two-photon absorption are calculated.

Physica Scripta•Jan 1, 1993•1 citation

Coherent generation and interference of excitons and biexcitons in GaAs/ Alx Ga1−x As quantum wells

K.‐H. Pantke, D. Oberhauser, Vadim G. Lyssenko +2 more

We report measurements of two-photon transitions to the biexciton state and exciton-biexciton transitions (M band) in GaAs/${\mathrm{Al}}_{\mathit{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple quantum wells by spectrally resolving the self-diffraction in a four-wave-mixing experiment. Furthermore, nonlinear quantum beats between a coherently prepared population of excitons and biexcitons are observed. The analysis yields a binding energy of 1.8 meV for the biexciton in 116-A\r{} quantum wells.

Physical review. B, Condensed matter•Jan 15, 1993•135 citations

The contribution of biexcitons to the four-wave mixing response of quantum wells with inhomogeneously broadened transitions

Giovanni Bongiovanni, Steffen Gurtler, Andrea Mura +2 more

We investigate the four-wave mixing response of semiconductor quantum wells having a predominantly inhomogeneous broadening of the exciton states. The influence of the biexcitons on the nonlinear emission, in proximity to the lowest exciton resonance, is studied. Using about 1 ps long pulses, we show that biexcitons are created for all excitation energies lying within the broadened exciton absorption line, and that their binding energy does not depend on the exciton energy. Reducing the temporal width of cross-linearly polarized incident laser fields to about 0.1 ps, we observe a drastic changeover from a prompt response to a photon echo, and quite interesting beating phenomena, visible in time-integrated as well as in time-resolved experiments, appear. Our observations compare well with the numerical solutions of the optical Bloch equations for a five-level scheme. The influence of the inhomogeneous broadening on the beating phenomena is discussed.

Semiconductor Science and Technology•Mar 1, 1997•8 citations

Polarization choices in exciton-biexciton system of GaAs quantum wells

S. Adachi, T. Miyashita, S. Takeyama +3 more

We study the induced absorption due to biexciton formation in absorption bleaching pump-probe signals and the quantum beats between exciton and biexciton in the four-wave-mixing signals. The origin is confirmed by the polarization dependence of the signals in both experiments. The definite discrimination between exciton-biexciton quantum beats and the others by the polarization choices is demonstrated clearly. We also show the well-width dependence of the biexciton binding energy that is determined by the period of the quantum beats in the range of well width 45--150 \AA{} of GaAs/${\mathrm{Al}}_{\mathrm{x}}$${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As (x=0.3--1.0) multiple quantum wells.

Physical review. B, Condensed matter•Jan 15, 1997•54 citations

Contributions to optical absorption in GaAs/AlGaAs multiple quantum wells

Alan R. Kost, M. Kawase, E. Garmire

An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.

Annual Meeting Optical Society of America•Jan 1, 1987•1 citation

BIEXCITONIC NONLINEARITY IN GaAs/GaxAl1-xAs QUANTUM WELLS AND WIRES

L. Bányai, Ian Galbraith, H. Haug

The recently reported high excitonic and biexcitonic binding energies in GaAs/GaxAl1-xAs quantum wells and quantum wells wires suggests the possibility of strong optical nonlinearities around the biexcitonic resonance. We calculate using a simple boson model the magnitude of the absorptive and dispersive nonlinearities in GaAs, around the biexciton resonance comparing bulk, quantum well and quantum well wire structures. An assessment of inhomogeneous line broadening due to a Gaussian distribution of quantum well wire radii is also presented.

Le Journal de Physique Colloques•Jun 1, 1988•1 citation
Generation of cold excitons in GaAs quantum wells is shown to lead to enhanced condensation to the biexciton state under cw illumination. Resonant two-photon absorption to the biexciton state in the same structure is found to account for a quantum beating phenomenon involving the biexciton and exciton states in a more complex three-level system than hitherto investigated.
We report measurements of two-photon transitions to the biexciton state and exciton-biexciton transitions (M band) in GaAs/Alx{\mathrm{Al}}_{\mathit{x}}Alx​${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$As multiple quantum wells by spectrally resolving the self-diffraction in a four-wave-mixing experiment. Furthermore, nonlinear quantum beats between a coherently prepared population of excitons and biexcitons are observed. The analysis yields a binding energy of 1.8 meV for the biexciton in 116-A\r{} quantum wells.
We investigate the four-wave mixing response of semiconductor quantum wells having a predominantly inhomogeneous broadening of the exciton states. The influence of the biexcitons on the nonlinear emission, in proximity to the lowest exciton resonance, is studied. Using about 1 ps long pulses, we show that biexcitons are created for all excitation energies lying within the broadened exciton absorption line, and that their binding energy does not depend on the exciton energy. Reducing the temporal width of cross-linearly polarized incident laser fields to about 0.1 ps, we observe a drastic changeover from a prompt response to a photon echo, and quite interesting beating phenomena, visible in time-integrated as well as in time-resolved experiments, appear. Our observations compare well with the numerical solutions of the optical Bloch equations for a five-level scheme. The influence of the inhomogeneous broadening on the beating phenomena is discussed.
We study the induced absorption due to biexciton formation in absorption bleaching pump-probe signals and the quantum beats between exciton and biexciton in the four-wave-mixing signals. The origin is confirmed by the polarization dependence of the signals in both experiments. The definite discrimination between exciton-biexciton quantum beats and the others by the polarization choices is demonstrated clearly. We also show the well-width dependence of the biexciton binding energy that is determined by the period of the quantum beats in the range of well width 45--150 \AA{} of GaAs/Alx{\mathrm{Al}}_{\mathrm{x}}Alx​${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$As (x=0.3--1.0) multiple quantum wells.
An examination of the contribution of excitons, compared to the continuum states, to the optical properties of GaAs/AlGaAs multiple quantum wells illuminates the mechanisms underlying nonlinear absorption and nonlinear refraction and yields information which is useful for optimizing devices which incorporate these materials. We have measured the absorption as a function of intensity at three different wavelengths—above the band edge, on the excitonic resonance, and far below the band edge—to separate the effects. We find that different well thicknesses have different saturation intensities both for excitonic and continuum absorption.
The recently reported high excitonic and biexcitonic binding energies in GaAs/GaxAl1-xAs quantum wells and quantum wells wires suggests the possibility of strong optical nonlinearities around the biexcitonic resonance. We calculate using a simple boson model the magnitude of the absorptive and dispersive nonlinearities in GaAs, around the biexciton resonance comparing bulk, quantum well and quantum well wire structures. An assessment of inhomogeneous line broadening due to a Gaussian distribution of quantum well wire radii is also presented.