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Semiconductor Science and Technology

The contribution of biexcitons to the four-wave mixing response of quantum wells with inhomogeneously broadened transitions

Giovanni Bongiovanni, Steffen Gurtler, Andrea Mura, Francesco Quochi, Jean Louis Staehli

Published Mar 1, 1997• 8 citations
Publisher

Abstract

We investigate the four-wave mixing response of semiconductor quantum wells having a predominantly inhomogeneous broadening of the exciton states. The influence of the biexcitons on the nonlinear emission, in proximity to the lowest exciton resonance, is studied. Using about 1 ps long pulses, we show that biexcitons are created for all excitation energies lying within the broadened exciton absorption line, and that their binding energy does not depend on the exciton energy. Reducing the temporal width of cross-linearly polarized incident laser fields to about 0.1 ps, we observe a drastic changeover from a prompt response to a photon echo, and quite interesting beating phenomena, visible in time-integrated as well as in time-resolved experiments, appear. Our observations compare well with the numerical solutions of the optical Bloch equations for a five-level scheme. The influence of the inhomogeneous broadening on the beating phenomena is discussed.

DOI
10.1088/0268-1242/12/3/011

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We investigate the four-wave mixing response of semiconductor quantum wells having a predominantly inhomogeneous broadening of the exciton states. The influence of the biexcitons on the nonlinear emission, in proximity to the lowest exciton resonance, is studied. Using about 1 ps long pulses, we show that biexcitons are created for all excitation energies lying within the broadened exciton absorption line, and that their binding energy does not depend on the exciton energy. Reducing the temporal width of cross-linearly polarized incident laser fields to about 0.1 ps, we observe a drastic changeover from a prompt response to a photon echo, and quite interesting beating phenomena, visible in time-integrated as well as in time-resolved experiments, appear. Our observations compare well with the numerical solutions of the optical Bloch equations for a five-level scheme. The influence of the inhomogeneous broadening on the beating phenomena is discussed.
We report time-resolved degenerate four-wave-mixing experiments on a high-quality single GaAs quantum well. The signals for parallel and cross-polarized exciting pulses show pronounced quantum beats with different frequencies corresponding to the heavy/light-hole splitting and the biexciton binding energy, respectively. Comparison of the experimental data with solutions of the optical Bloch equations for a phenomenological model system shows that these features result from strong contributions of the biexcitonic state. The importance of biexcitons to the nonlinear coherent response of the two-dimension exciton is further confirmed by the frequency dependence of the time-integrated four-wave-mixing signal amplitudes measured for the two polarization geometries.
The coherent response of excitons in semiconductor nanostructures measured in four-wave mixing (FWM) depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/Al0.3Ga0.7As single quantum wells (SQW) and AlxGa1-xAs mixed crystals. Additional to the usual phase-space filling nonlinearity, excitation-induced dephasing (EID) and biexciton formation (BIF) are important. EID leads to a strong dependence of the signal on the angle between the linear input polarizations. We find that EID persists in inhomogeneous systems, showing that the mutual density-dependent dephasing rate difference between two subsystems within the inhomogeneous distribution is strongly dependent on their energy difference. BIF is strongly affecting the cross-linear polarized FWM response. The signal for positive delay is dominated by the transitions from the one-exciton state X to the two-exciton states. Here, the third-order polarization at X-XX is not at the same resonance as the first-order polarization at 0-X. Consequently, the rephasing of the microscopic third-order polarization to the macroscopic FWM photon echo is blurred by the non-perfect correlation of X and XX energies, leading to a fast and non-exponential signal decay in delay time. For inhomogeneous broadenings larger than the biexciton binding energy, we find an enhanced biexciton binding energy, and a quenching of the oscillator strength of the unbound biexciton.
Using a perturbation theory based on the density-matrix formulation, we study the nonlinear optical responses of a noninteracting three-level model system to consecutive coherent pulsed excitations, as realized in several recent experiments involving excitonic transitions in quantum wells. The terahertz emission, which is a second-order response, and the four-wave mixing signal, a third-order response, are calculated within the rotating-wave approximation, in the presence of detuning, dephasing, and inhomogeneous broadening. We study the quantum beats in the photon echo from transient four-wave mixing experiments of a three-level system. We find that the temporal profile of the photon echo signal in the four-wave mixing experiments depends very strongly on the amount of inhomogeneous broadening of the energy levels involved. Both the position and the intensity of the peaks exhibit a smooth evolution from strong quantum beats to a conventional photon echo as the inhomogeneous broadening increases. These features from our noninteracting model system are compared with a recent experiment, and found to account for a number of experimental observations.
Summary form only given.The coherent response of excitons in semiconductor nanostructures, as measured in four wave mixing (FWM) experiments, depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs-AlGaAs single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms are found to be important. First, the excitation-induced dephasing FWM signal (EID), which leads to a strong dependence of the signal on the angle between the linear input polarizations. The presence of the EID in the mainly homogeneously broadened sample (25 nm) is shown by the beating between EID and two-photon coherence (TPC) at the exciton for negative delay and co-linear polarized excitation. It vanishes for cross-polarized excitation, thus excluding the importance of local-field effects.
We have performed time-integrated as well as time-resolved femtosecond degenerate four-wave-mixing measurements on inhomogeneously broadened (Zn,Cd)Se/ZnSe quantum-well structures. Potential fluctuations due to alloy disorder in the ternary wells give rise to localized quasi-zero-dimensional excitons and biexcitons. For time-integrated detection, they manifest themselves by distinct (disorder-renormalized) quantum beats. Time resolving these transients reveals a free-induction-decay-like emission nature of the biexciton in contrast to the photon-echo exciton contribution. Using a five-level scheme, containing both biexcitons and antibound two-exciton states, this striking emission-type change is explained by fluctuation and correlation effects upon the biexciton binding energy. A combination of time-resolved and time-integrated four-wave mixing is thus a powerful tool to gain information about the disorder in a given kind of quantum structure.
We present a model for the nonlinear optical response of quantum wells, which includes biexcitons. We show that within this model, the interaction of two laser pulses, mediated by the nonlinear susceptibility, results in oscillations and in coupling between ${\mathrm{\ensuremath{\sigma}}}^{+}$ and ${\mathrm{\ensuremath{\sigma}}}^{\mathrm{\ensuremath{-}}}$ excitons. This explains the temporal behavior of the differential absorption and four-wave mixing in recent experiments [Phys. Rev. Lett. 68, 349 (1992); 68, 1880 (1992)]. The oscillations have a frequency equal to the biexciton binding energy, and are different from known interference and quantum beat phenomena.