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Optics and Spectroscopy

Optical bistability based on the temperature dependence of the radiative recombination time: A new class of optical bistability components

Vyacheslav A. Trofimov

Published Jun 1, 2002• 5 citations
Publisher

Abstract

The effect of the temperature dependence of the free-electron radiative recombination time on the onset of absorption optical bistability has been considered within the point-charge model. The existence of multistable states and the possibility of reducing by tens of times the switching temperatures and intensities and the differences between their corresponding values have been revealed. This permits one to reduce considerably the energy expended per switching event and, hence, to increase the speed of response of a bistable system.

DOI
10.1134/1.1490029

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The effect of the temperature dependence of the free-electron radiative recombination time on the onset of absorption optical bistability has been considered within the point-charge model. The existence of multistable states and the possibility of reducing by tens of times the switching temperatures and intensities and the differences between their corresponding values have been revealed. This permits one to reduce considerably the energy expended per switching event and, hence, to increase the speed of response of a bistable system.
The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.
Problems of stability of bistable states in aspect of information storage are considered. Influence of temperature dependencies of absorption coefficient and relaxation time of free electrons onto realization of bistability and possibility of self-switching were investigated in context of a point-wise model. As a result various regimes of interaction of light pulse with the semiconductor were revealed due to the numerical simulation and parametrical analysis. Principal possibility of instability of both bistable states, which promote development of self- switching, was first shown in the model.
Relaxation cavityless optical bistability is studied when a semiconductor is exposed to light quanta with an energy exceeding the transition energy and the free-electron relaxation time depends on temperature. The numerical analysis of dynamic equations for temperature and free-electron density demonstrates that 11 regimes of light-semiconductor interaction are possible. The regimes are classified in terms of the features of temperature-intensity characteristic curves, namely, by the number and arrangement of instability and quasistability segments and by the presence or absence of bistability. It is found that both the upper and the lower branch of a bistable characteristic curve may be unstable, which results in spontaneous switchings between the respective states. Similarly, if the upper state is unstable and the lower state is stable, a small perturbation of the parameters (free-electron temperature and density) near the former causes the transition to the oscillatory regime. If the upper state is unstable and a small perturbation of the lower (stable) state excites a damped oscillation, spontaneous switchings result if the fluctuating temperature exceeds some critical value for the lower state.
The switching dynamics of thermally induced optical bistability due to increasing absorption is investigated in thin CdS platelets, at room temperature. Fast and slow components can be observed during the switching process, they depend on the holding point intensity and on the switching pulse energy. It is shown that the transverse relaxation of the temperature in the sample influences this dynamics. The spectral shift of the band to band absorption edge, at the origin of the bistable behavior, is observed in a three beam experiment.