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Technical Physics

Extended temperature range of absorptive optical bistability in semiconductors

Tatiana M. Lysak, Vyacheslav A. Trofimov

Published Sep 1, 2000• 0 citations
Publisher

Abstract

Optical bistability based on the temperature dependence of the absorption coefficient in a semiconductor is considered. It is theoretically demonstrated that the upper bound of the thermostat temperatures at which the bistability is possible can be raised by a factor of three as against its conventional value reported in the literature. This can be achieved in the case of the Auger recombination of free electrons in semiconductors.

DOI
10.1134/1.1318116

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Optical bistability based on the temperature dependence of the absorption coefficient in a semiconductor is considered. It is theoretically demonstrated that the upper bound of the thermostat temperatures at which the bistability is possible can be raised by a factor of three as against its conventional value reported in the literature. This can be achieved in the case of the Auger recombination of free electrons in semiconductors.
The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.
The effect of the temperature dependence of the free-electron radiative recombination time on the onset of absorption optical bistability has been considered within the point-charge model. The existence of multistable states and the possibility of reducing by tens of times the switching temperatures and intensities and the differences between their corresponding values have been revealed. This permits one to reduce considerably the energy expended per switching event and, hence, to increase the speed of response of a bistable system.
Using computer simulation, the feasibility of absorption optical bistability based on the dependence of the absorption coefficient on an electric field induced by a high-intensity laser pulse acting on a semiconductor and shifting the energy levels of atoms is demonstrated. Unlike the known mechanisms behind absorption optical bistability, here enhanced diffusion of charged particles does not change the rate of switching the system from the lower to upper state. Radiation-semiconductor interaction conditions are found when, after being switched to the upper state, the system remains in it until the laser pulse disappears.
Problems of stability of bistable states in aspect of information storage are considered. Influence of temperature dependencies of absorption coefficient and relaxation time of free electrons onto realization of bistability and possibility of self-switching were investigated in context of a point-wise model. As a result various regimes of interaction of light pulse with the semiconductor were revealed due to the numerical simulation and parametrical analysis. Principal possibility of instability of both bistable states, which promote development of self- switching, was first shown in the model.
The effect of specific features of the exciton and phonon spectra of layered semiconductors on the conditions of realization of optical bistability in the exciton absorption region has been theoretically investigated by the Green’s function method. By the example of the 2 H polytype of PbI 2 , it is shown that effective exciton scattering from low-energy bending-wave vibrations leads to a blue shift of the frequency range of bistability realization and its narrowing; expansion of the temperature range of bistability observation; and a shift of the hysteresis loop to higher intensities, accompanied by a decrease in its height and width. The possibility of observing polarization optical bistability, which is related to the dependence of the exciton energy spectrum on the propagation direction of a light wave in a crystal, is also substantiated.