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Technical Physics

Spontaneous switching in cavityless optically bistable systems

Tatiana M. Lysak, Vyacheslav A. Trofimov

Published Feb 1, 2000• 1 citation

Abstract

Relaxation cavityless optical bistability is studied when a semiconductor is exposed to light quanta with an energy exceeding the transition energy and the free-electron relaxation time depends on temperature. The numerical analysis of dynamic equations for temperature and free-electron density demonstrates that 11 regimes of light-semiconductor interaction are possible. The regimes are classified in terms of the features of temperature-intensity characteristic curves, namely, by the number and arrangement of instability and quasistability segments and by the presence or absence of bistability. It is found that both the upper and the lower branch of a bistable characteristic curve may be unstable, which results in spontaneous switchings between the respective states. Similarly, if the upper state is unstable and the lower state is stable, a small perturbation of the parameters (free-electron temperature and density) near the former causes the transition to the oscillatory regime. If the upper state is unstable and a small perturbation of the lower (stable) state excites a damped oscillation, spontaneous switchings result if the fluctuating temperature exceeds some critical value for the lower state.

DOI: 10.1134/1.1259599

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Physical reasons for the development of spatial and temporal instabilities realizing in optical bistability (OB) cavity- free systems are analyzed. It is shown that there are certain types of instability. We describe diffraction instability of light beams due to its propagation through a boundary on a high absorption domain. We consider instability generated by nonlinear dependence of a relaxation time of excited states of atoms (molecules) on vibration temperature or on room temperature under the condition of presence (or absence) of nonlinear absorption. We investigate instability due to an influence of laser- induced electric field and instability caused by the delay in a scheme with additional lateral feedback and instability in a scheme with mirror having a hole at its axis caused by dynamical lenses.

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