Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Semiconductors

Optical bistability and instability in a semiconductor in the case where the relaxation time of free charge carriers and their equilibrium concentration are temperature-dependent

Olesya Bondarenko, Tatiana M. Lysak, Vyacheslav A. Trofimov

Published Sep 1, 2000• 0 citations
Publisher

Abstract

The influence of temperature dependences of the relaxation time of free carriers and their equilibrium concentration on the feasibility of the bistability and instability of steady states is considered. A model describing the process of interaction of optical radiation with a semiconductor was used in the consideration, with various assumptions concerning the conditions of this interaction made.

DOI
10.1134/1.1309418

Related papers

Self-switching in optical bistable cavity-free system

Tatiana M. Lysak, Vyacheslav A. Trofimov

Problems of stability of bistable states in aspect of information storage are considered. Influence of temperature dependencies of absorption coefficient and relaxation time of free electrons onto realization of bistability and possibility of self-switching were investigated in context of a point-wise model. As a result various regimes of interaction of light pulse with the semiconductor were revealed due to the numerical simulation and parametrical analysis. Principal possibility of instability of both bistable states, which promote development of self- switching, was first shown in the model.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Sep 24, 1999•0 citations

Absorption optical bistability in semiconductors under the action of an external electric field

Tatiana M. Lysak, Vyacheslav A. Trofimov

The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.

Optics and Spectroscopy•Sep 1, 2006•1 citation

Optical bistability based on the temperature dependence of the radiative recombination time: A new class of optical bistability components

Vyacheslav A. Trofimov

The effect of the temperature dependence of the free-electron radiative recombination time on the onset of absorption optical bistability has been considered within the point-charge model. The existence of multistable states and the possibility of reducing by tens of times the switching temperatures and intensities and the differences between their corresponding values have been revealed. This permits one to reduce considerably the energy expended per switching event and, hence, to increase the speed of response of a bistable system.

Optics and Spectroscopy•Jun 1, 2002•5 citations

On the possibility of detecting the relaxation optical bistability in an extended medium

Tatiana M. Lysak, Vyacheslav A. Trofimov

The possibility for efficient detection of wave phenomena in an optically extended semiconductor in the case of development of instability in a system with the relaxation mechanism of optical bistability was studied. It is shown that the use of two-wave action allows the development of processes in the bulk of the semiconductor to be detected with the help of probing radiation. The influence of diffusion and thermal conductivity on the characteristics of wave processes in a semiconductor and the possibility of realizing the detection are revealed.

Optics and Spectroscopy•Jan 1, 2002•0 citations

Resonatorless optical bistability in a thin semiconductor film

S L Gaivan, P. I. Khadzhi

A theoretical investigation is reported of steady-state nonlinear transmission of resonant laser radiation by a thin semiconductor film under the conditions of two-pulse generation of excitons and biexcitons. The equations of state are derived for the description of bistable behavior of the amplitudes of the transmitted pulses and of the quasiparticle concentration, depending on the parameters of the exciting fields. The criteria of existence of an optical bistability are determined.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jul 2, 1998•0 citations

Spatial and temporal instabilities of light fields in cavity-free optical bistable systems

Vyacheslav A. Trofimov

Physical reasons for the development of spatial and temporal instabilities realizing in optical bistability (OB) cavity- free systems are analyzed. It is shown that there are certain types of instability. We describe diffraction instability of light beams due to its propagation through a boundary on a high absorption domain. We consider instability generated by nonlinear dependence of a relaxation time of excited states of atoms (molecules) on vibration temperature or on room temperature under the condition of presence (or absence) of nonlinear absorption. We investigate instability due to an influence of laser- induced electric field and instability caused by the delay in a scheme with additional lateral feedback and instability in a scheme with mirror having a hole at its axis caused by dynamical lenses.

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE•Jan 28, 1999•3 citations
The influence of temperature dependences of the relaxation time of free carriers and their equilibrium concentration on the feasibility of the bistability and instability of steady states is considered. A model describing the process of interaction of optical radiation with a semiconductor was used in the consideration, with various assumptions concerning the conditions of this interaction made.
Problems of stability of bistable states in aspect of information storage are considered. Influence of temperature dependencies of absorption coefficient and relaxation time of free electrons onto realization of bistability and possibility of self-switching were investigated in context of a point-wise model. As a result various regimes of interaction of light pulse with the semiconductor were revealed due to the numerical simulation and parametrical analysis. Principal possibility of instability of both bistable states, which promote development of self- switching, was first shown in the model.
The conditions for the realization of absorption optical bistability under the simultaneous action of two (radiative and nonradiative) mechanisms of recombination of free charge carriers are investigated. It is shown that, in the diffusion mechanism of stream of free electrons from the beam axis, the temperature dependence of radiative recombination does not expand the temperature range of the thermostat in which the optical bistability occurs. A scheme is proposed with application of an external transverse electric field, which makes it possible to realize absorption optical bistability at any ambient temperature. An important advantage of this scheme is the conservation of the state of a bistable system after the action of a light pulse and a significant decrease in the energy spent on cooling of the medium.
The effect of the temperature dependence of the free-electron radiative recombination time on the onset of absorption optical bistability has been considered within the point-charge model. The existence of multistable states and the possibility of reducing by tens of times the switching temperatures and intensities and the differences between their corresponding values have been revealed. This permits one to reduce considerably the energy expended per switching event and, hence, to increase the speed of response of a bistable system.
The possibility for efficient detection of wave phenomena in an optically extended semiconductor in the case of development of instability in a system with the relaxation mechanism of optical bistability was studied. It is shown that the use of two-wave action allows the development of processes in the bulk of the semiconductor to be detected with the help of probing radiation. The influence of diffusion and thermal conductivity on the characteristics of wave processes in a semiconductor and the possibility of realizing the detection are revealed.
Physical reasons for the development of spatial and temporal instabilities realizing in optical bistability (OB) cavity- free systems are analyzed. It is shown that there are certain types of instability. We describe diffraction instability of light beams due to its propagation through a boundary on a high absorption domain. We consider instability generated by nonlinear dependence of a relaxation time of excited states of atoms (molecules) on vibration temperature or on room temperature under the condition of presence (or absence) of nonlinear absorption. We investigate instability due to an influence of laser- induced electric field and instability caused by the delay in a scheme with additional lateral feedback and instability in a scheme with mirror having a hole at its axis caused by dynamical lenses.