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Optics and Spectroscopy

On the possibility of detecting the relaxation optical bistability in an extended medium

Tatiana M. Lysak, Vyacheslav A. Trofimov

Published Jan 1, 2002• 0 citations
Publisher

Abstract

The possibility for efficient detection of wave phenomena in an optically extended semiconductor in the case of development of instability in a system with the relaxation mechanism of optical bistability was studied. It is shown that the use of two-wave action allows the development of processes in the bulk of the semiconductor to be detected with the help of probing radiation. The influence of diffusion and thermal conductivity on the characteristics of wave processes in a semiconductor and the possibility of realizing the detection are revealed.

DOI
10.1134/1.1446587

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A rigorous solution is given in the plane-wave approximation for the boundary problem of light reflection from the interface between an isotropic medium and a photorefractive crystal with drift-diffusion nonlinearity. The possibility of realizing hysteresis reflection or optical bistability in the system under certain conditions is shown. Analytical expressions are obtained that describe the hysteresis behavior of reflectivity as a function of the angle of incidence or the strength of a constant external electric field applied to the crystal. The results of the study are of interest for the development of devices controlling laser radiation.