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The Review of Laser Engineering

Fine Spectroscopy of Neutral Silicon Atoms

Akira Kunieda, Hiroshi Kumagai, T. Iwane, Satoru Shimizu, Katsumi Midorikawa, Minoru Obara

Published Jan 1, 2004• 1 citation
Publisher

Abstract

In order to manipulate silicon atoms through laser cooling, it is necessary to detune precisely to the resonant frequency of the 33P1→43Po0 transition of silicon atoms at 252.41 nm, 28.8 MHz of the natural linewidth and 35.4 mW/cm2 of the saturation intensity. In this study, we demonstrated the optogalvanic spectroscopy for silicon atoms with two types of nano-second frequency tripled Ti:sapphire lasers.

DOI
10.2184/lsj.32.469

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In order to manipulate silicon atoms through laser cooling, it is necessary to detune precisely to the resonant frequency of the 33P1→43Po0 transition of silicon atoms at 252.41 nm, 28.8 MHz of the natural linewidth and 35.4 mW/cm2 of the saturation intensity. In this study, we demonstrated the optogalvanic spectroscopy for silicon atoms with two types of nano-second frequency tripled Ti:sapphire lasers.
Summary form only given. Various atoms belonging to the elements of alkali metals, alkaline-earth metals, and rare gases have been cooled by laser since Haensch and Schawlow proposed laser cooling of atoms in 1975. The resonant frequencies for these atoms have been accessible with conventional lasers. By contrast, silicon atoms have not been the same case as these elements, while there are various potential applications such as atom lithography and atom holography. Therefore, we developed the light source for laser cooling of silicon atoms for the first time. The all-solid-state light source can radiate a continuous-wave and single-frequency coherent light at 252 nm whose linewidth is 11 MHz, which is narrow enough because the natural linewidth of the laser cooling transition is 29 MHz. Moreover, the deep ultraviolet output is stable, because the power fluctuation is less than 5%. Towards laser cooling of silicon atoms, we should know the accurate frequency of our light source. Therefore, we perform the optogalvanic spectroscopy of silicon atoms with a hollow-cathode lamp to set the frequency. In order to examine the performance of the silicon-hollow-cathode lamp, we demonstrated the spectroscopic experiment with the third harmonic coherent light of a ns Ti:sapphire laser, which provides 10 ns pulsed light with a 10 Hz repetition rate. Around 252 nm, we observed optogalvanic signals of neutral silicon atoms.
Laser cooling techniques of silicon may be a powerful tool to create a new silicon road map. In the first step, to realize the laser cooling of neutral silicon atoms highly efficient frequency conversions are conducted to obtain a deep-ultraviolet single-mode coherent light using two-stage external cavities. The 154-mW power at around 252 nm is obtained with a conversion efficiency of more than 8% by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a single-mode Ti:sapphire laser. This paper reviews a series of challenges for taking possession of the spatial design of nuclear spins of the family of stable isotopes with laser cooling of silicon.
Highly efficient frequency conversions were conducted to obtain a deep-ultraviolet single-mode coherent light using two-stage external cavities. 154-mW power at around 252 nm was obtained with a conversion efficiency of more than 8% by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a single-mode Ti:sapphire laser. The output performances of the deep-ultraviolet light source are sufficient for realizing the laser cooling of neutral silicon atoms and then their manipulation with an atomic mirror.
A new nano-cell with smoothly varying longitudinal thickness of the atomic vapour layer L in the range of 350 - 5100 nm allowing to study the resonant absorption of D1 and D2 lines of Cs atoms for thicknesses changing from L = Lambda/2 to L = 6 Lambda with the step of Lambda/2 (Lambda = 852 nm or 894 nm are the resonant laser wavelengths) and for different intensities is developed. It is revealed that for low laser intensities there is narrowing of the resonant absorption spectrum for the thicknesses L = (2n + 1)Lambda/2 (where n is an integer) up to L = 7Lambda /2 and broadening of the spectrum for L = n Lambda. For relatively high laser intensity (>1 mW/cm2), velocity selective optical pumping/saturated resonances of a reduced absorption (with the line-width close to the natural one), and centred on the hyperfine transitions occur when L = n Lambda. The possible application of these resonance peaks is given. The developed theoretical model describes well the experiment.
We have demonstrated the first one-dimensional laser cooling of neutral gallium atoms. We identified the 4p2P3/2(F=3) → 4d2D5/2(F=4) transition at 294.45 nm as a cycling transition suitable for laser cooling. We developed a frequency stabilized tunable UV laser capable of generating over 90 mW for use at that wavelength. A careful spectroscopy of the hyperfine structure was performed on the 294.45 nm transition. This spectroscopy significantly improved the measurement of the Ga hyperfine constants and corrected existing errors in the literature.
We transfer the frequency stability from a diode laser, which was locked to Doppler-free saturation absorption resonance in lithium vapor cell, to a tunable Ti-sapphire laser. We get the laser linewidth < 100 kHz/100 ms and absolute frequency stability ±0.5 MHz. The uv laser system which included the stabilized Ti-sapphire laser and frequency doubler has output optical beam with power near 100 mW and wavelength 350 nm. This uv laser system will be used for excitation and study of Rydberg states in lithium atoms.