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European Quantum Electronics Conference (EQEC)

Optogalvanic spectroscopy of silicon atoms towards laser cooling of silicon

Hiroshi Kumagai, Y. Ueda, T. Iwane, T. Meguro, K. Midorikawa, M. Obara

Published Jan 1, 2003• 0 citations
Publisher

Abstract

Summary form only given. Various atoms belonging to the elements of alkali metals, alkaline-earth metals, and rare gases have been cooled by laser since Haensch and Schawlow proposed laser cooling of atoms in 1975. The resonant frequencies for these atoms have been accessible with conventional lasers. By contrast, silicon atoms have not been the same case as these elements, while there are various potential applications such as atom lithography and atom holography. Therefore, we developed the light source for laser cooling of silicon atoms for the first time. The all-solid-state light source can radiate a continuous-wave and single-frequency coherent light at 252 nm whose linewidth is 11 MHz, which is narrow enough because the natural linewidth of the laser cooling transition is 29 MHz. Moreover, the deep ultraviolet output is stable, because the power fluctuation is less than 5%. Towards laser cooling of silicon atoms, we should know the accurate frequency of our light source. Therefore, we perform the optogalvanic spectroscopy of silicon atoms with a hollow-cathode lamp to set the frequency. In order to examine the performance of the silicon-hollow-cathode lamp, we demonstrated the spectroscopic experiment with the third harmonic coherent light of a ns Ti:sapphire laser, which provides 10 ns pulsed light with a 10 Hz repetition rate. Around 252 nm, we observed optogalvanic signals of neutral silicon atoms.

DOI
10.1109/eqec.2003.1314106

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Summary form only given. Various atoms belonging to the elements of alkali metals, alkaline-earth metals, and rare gases have been cooled by laser since Haensch and Schawlow proposed laser cooling of atoms in 1975. The resonant frequencies for these atoms have been accessible with conventional lasers. By contrast, silicon atoms have not been the same case as these elements, while there are various potential applications such as atom lithography and atom holography. Therefore, we developed the light source for laser cooling of silicon atoms for the first time. The all-solid-state light source can radiate a continuous-wave and single-frequency coherent light at 252 nm whose linewidth is 11 MHz, which is narrow enough because the natural linewidth of the laser cooling transition is 29 MHz. Moreover, the deep ultraviolet output is stable, because the power fluctuation is less than 5%. Towards laser cooling of silicon atoms, we should know the accurate frequency of our light source. Therefore, we perform the optogalvanic spectroscopy of silicon atoms with a hollow-cathode lamp to set the frequency. In order to examine the performance of the silicon-hollow-cathode lamp, we demonstrated the spectroscopic experiment with the third harmonic coherent light of a ns Ti:sapphire laser, which provides 10 ns pulsed light with a 10 Hz repetition rate. Around 252 nm, we observed optogalvanic signals of neutral silicon atoms.
Laser cooling techniques of silicon may be a powerful tool to create a new silicon road map. In the first step, to realize the laser cooling of neutral silicon atoms highly efficient frequency conversions are conducted to obtain a deep-ultraviolet single-mode coherent light using two-stage external cavities. The 154-mW power at around 252 nm is obtained with a conversion efficiency of more than 8% by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a single-mode Ti:sapphire laser. This paper reviews a series of challenges for taking possession of the spatial design of nuclear spins of the family of stable isotopes with laser cooling of silicon.
Highly efficient frequency conversions were conducted to obtain a deep-ultraviolet single-mode coherent light using two-stage external cavities. 154-mW power at around 252 nm was obtained with a conversion efficiency of more than 8% by doubly resonant sum-frequency mixing of 373-nm light from the first-stage conversion and 780-nm light from a single-mode Ti:sapphire laser. The output performances of the deep-ultraviolet light source are sufficient for realizing the laser cooling of neutral silicon atoms and then their manipulation with an atomic mirror.
We investigate optical properties of semiconductor atoms by absorption and emission spectroscopies. Each of 3PJ' - 3P°J transitions except for J'=0 (the total angular momentum of the ground state) is confirmed in broad emission spectra in a hollow-cathode discharge in which negative electrodes incorporate semiconductor atoms that are evaporated in the discharge. For finer spectroscopies, the 3P1 - 3P°0 cyclic transition for laser cooling of silicon atoms at 252 nm is investigated in absorption spectra with a single-frequency tunable deep-UV coherent light source, which has a high potential for controlling their nuclear spins.