Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR)

Optical Flip-flop Operation Using a DBR Laser

Shinji Matsuo, Takaaki Kakitsuka, Toru Segawa, Hiroyuki Suzuki

Published Aug 1, 2007• 5 citations
Publisher

Abstract

We have investigated bistability of a DBR laser using side-mode injection. Flip-flop operation is demonstrated with low input switching power. The threshold switching power is reduced significantly by decreasing the wavelength detuning from the side-mode. Thus, an optical memory based on a DBR laser can be easily addressed by controlling the input signal wavelength.

DOI
10.1109/cleopr.2007.4391221

Related papers

All-optical flip-flop operation based on bistability in V-cavity laser

Yingchen Wu, Yu Zhu, Xiaolu Liao +2 more

We theoretically analyzed and experimentally demonstrated an injection-locking based all-optical flip-flop memory using a simple and compact tunable V-cavity laser (VCL). A bistable region in the tuning characteristics of the VCL is employed for the flip-flop operation. The state of the VCL can be set and reset by injecting signal pulses at two different wavelengths. The pulse power for both set and reset signal is only about 1 pJ. Short response times of about 150 ps are measured for storing and erasing.

Optics Express•May 31, 2016•19 citations

All-optical flip-flop memory based on injection locked Fabry-Perot laser diode

Yong Deok Jeong, Hyuek Jae Lee, Jeong Sik Cho +2 more

We demonstrate all-optical flip-flop operation based on the bistability injection locked FP-LD. The proposed all-optical flip-flop consists of a slave FP-LD and a specially designed single mode FP-LD.

International Conference on Optical Internet•Jul 1, 2006•0 citations

Optical bistability in side-mode injection locked dual-mode Fabry-Pérot laser diode

Jian Wei Wu, Bikash Nakarmi, Tran Quoc Hoai +1 more

In this paper, optical bistability characteristics are demonstrated experimentally based on a dual-mode laser system comprising a multi-mode Fabry-Pérot laser diode (MMFP-LD) and a built-in feedback cavity formed by a fiber facet. The results show that two lasing modes with frequency separation of ∼0.58 THz and comparable peak powers can be achieved by judicious adjustment of the bias current and the operating temperature of the laser chip, which has a peak fluctuation of less than ∼1 dBm over a measurement period of one hour. A combination of appropriate external injection power and wavelength detuning can result in remarkable optical bistability in two oscillation modes, in which the resulting contrast ratio between the unlocked and locked states can be up to 30 dB, and the corresponding hysteresis loop width can be changed by controlling the side-mode injection power and the wavelength detuning.

AIP Advances•Aug 1, 2013•7 citations

Fast all-optical flip-flop based on a single distributed feedback laser diode

Koen Huybrechts, Geert I. Morthier, Roel Baets

Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.

Optics Express•Jul 15, 2008•85 citations

Ultrafast all-optical memory operation using a polarization bistable VCSEL

Hitoshi Kawaguchi

The fastest operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 26-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations had optical gain.

International Conference on Transparent Optical Networks•Jun 1, 2010•1 citation

A power and wavelength detuning-dependent hysteresis loop in a single mode Fabry—Pérot laser diode

Jian-Wei Wu, Bikash Nakarmi

In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wavelength detuning in a single mode Fabry—Pérot laser diode (SMFP-LD). Results show that the bistability characteristics of the dominant and injected modes are strongly dependent on the injected input optical power and wavelength detuning in an SMFP-LD. We observe three types of hysteresis loops: counterclockwise, clockwise, and butterfly hysteresis with various loop widths. In the case of a bistability loop caused by injection power, the transition from counterclockwise to clockwise in the hysteresis direction with the wavelength detuning from 0.028 nm to 0.112 nm is observed in a way of butterfly hysteresis for the dominant mode by increasing the wavelength detuning. The width of hysteresis loop, induced by wavelength detuning is also changed while the injection power is enhanced from −7 dBm to −5 dBm.

Chinese Physics B•Aug 1, 2013•2 citations
We have investigated bistability of a DBR laser using side-mode injection. Flip-flop operation is demonstrated with low input switching power. The threshold switching power is reduced significantly by decreasing the wavelength detuning from the side-mode. Thus, an optical memory based on a DBR laser can be easily addressed by controlling the input signal wavelength.
We theoretically analyzed and experimentally demonstrated an injection-locking based all-optical flip-flop memory using a simple and compact tunable V-cavity laser (VCL). A bistable region in the tuning characteristics of the VCL is employed for the flip-flop operation. The state of the VCL can be set and reset by injecting signal pulses at two different wavelengths. The pulse power for both set and reset signal is only about 1 pJ. Short response times of about 150 ps are measured for storing and erasing.
In this paper, optical bistability characteristics are demonstrated experimentally based on a dual-mode laser system comprising a multi-mode Fabry-Pérot laser diode (MMFP-LD) and a built-in feedback cavity formed by a fiber facet. The results show that two lasing modes with frequency separation of ∼0.58 THz and comparable peak powers can be achieved by judicious adjustment of the bias current and the operating temperature of the laser chip, which has a peak fluctuation of less than ∼1 dBm over a measurement period of one hour. A combination of appropriate external injection power and wavelength detuning can result in remarkable optical bistability in two oscillation modes, in which the resulting contrast ratio between the unlocked and locked states can be up to 30 dB, and the corresponding hysteresis loop width can be changed by controlling the side-mode injection power and the wavelength detuning.
Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.
The fastest operation of all-optical flip-flop memory was experimentally demonstrated using a 980-nm polarization bistable vertical-cavity surface-emitting laser (VCSEL). Operating conditions of the input signal power and the frequency detuning to achieve the fast optical memory operation were characterized experimentally. At the optimum condition, 1-bit data signals were arbitrarily sampled and memorized from a 26-1 pseudorandom bit sequence return-to-zero signal at 20 Gb/s by using AND gate and memory functionalities obtained from the polarization bistability. In addition, 1-bit memory operation was achieved for a 6-bit non-return-to-zero signal at 40 Gb/s. Both memory operations had optical gain.
In this paper, we observe experimentally the optical bistability induced by the side-mode injection power and wavelength detuning in a single mode Fabry—Pérot laser diode (SMFP-LD). Results show that the bistability characteristics of the dominant and injected modes are strongly dependent on the injected input optical power and wavelength detuning in an SMFP-LD. We observe three types of hysteresis loops: counterclockwise, clockwise, and butterfly hysteresis with various loop widths. In the case of a bistability loop caused by injection power, the transition from counterclockwise to clockwise in the hysteresis direction with the wavelength detuning from 0.028 nm to 0.112 nm is observed in a way of butterfly hysteresis for the dominant mode by increasing the wavelength detuning. The width of hysteresis loop, induced by wavelength detuning is also changed while the injection power is enhanced from −7 dBm to −5 dBm.