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IEEE Transactions on Magnetics

Experimental realization of a resistive single flux quantum logic circuit

V. P. Koshelets, K. K. Likharev, V. V. Migulin, Oleg A. Mukhanov, G. A. Ovsyannikov, Vasili K. Semenov, I. L. Serpuchenko, Alexander N. Vystavkin

Published Mar 1, 1987• 39 citations
Publisher

Abstract

An integrated circuit including all basic components of the recently suggested Resistive Single Flux Quantum (RSFQ) logic family has been designed, fabricated and tested successfully. The circuit includes a generator of periodic SFQ pulses, four buffer/amplifier stages for splitting, channeling and regeneration of the pulses, a detector/load stage, and universal RSFQ logic gate (here performing the NOT function). The 10μm design rule circuit employs 13 active Nb - Al2O3- Nb Josephson junctions with the critical current density ∼ 0.5 kA/cm2. externally shunted by Mo resistors with R 1 Ohm. The shunting provided critical damping of the junctions (\beta_{c}\lsim 1) and reasonable (\sim 500 \muV) IcR product. The circuit operation has been tested by measurement of dc voltages\bar{V}_{i}across various Josephson junctions as functions of the dc current through the pulse generator. Correct and stable operation of the circuit for the clock frequencies from 0 to ∼30 GHz has been demonstrated.

DOI
10.1109/tmag.1987.1064953

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IEEE Transactions on Applied Superconductivity•Mar 2, 2023•13 citations
An integrated circuit including all basic components of the recently suggested Resistive Single Flux Quantum (RSFQ) logic family has been designed, fabricated and tested successfully. The circuit includes a generator of periodic SFQ pulses, four buffer/amplifier stages for splitting, channeling and regeneration of the pulses, a detector/load stage, and universal RSFQ logic gate (here performing the NOT function). The 10μm design rule circuit employs 13 active Nb - Al2O3- Nb Josephson junctions with the critical current density ∼ 0.5 kA/cm2. externally shunted by Mo resistors with R 1 Ohm. The shunting provided critical damping of the junctions (\beta_{c}\lsim 1) and reasonable (\sim 500 \muV) IcR product. The circuit operation has been tested by measurement of dc voltages\bar{V}_{i}across various Josephson junctions as functions of the dc current through the pulse generator. Correct and stable operation of the circuit for the clock frequencies from 0 to ∼30 GHz has been demonstrated.
A new generation of the Josephson digital circuits-rapid single flux quantum (RSFQ) devices-based on overdamped externally shunted high quality Nb-AlO x -Nb tunnel junctions have been designed, fabricated and experimentally investigated. All-refractory material 11-layer 5 mu m integrated technology has been successfully employed for the preparation of the RSFQ microcircuits. The T flip-flop has been demonstrated to operate properly up to clock frequencies of 100 GHz at 25% margins. The proper operation of the buffer stage for a one-directional SFQ pulse transmission at clock frequencies up to 125 GHz has been achieved. The possibilities to convert the information from the usual DC form to SFQ and vice versa have been demonstrated. An output signal in an SFQ/DC converter as high as 220 mu V has been measured. A new counter type A/D converter which includes a comparator and reversible binary counter with DC outputs has been fabricated and tested. The proposed ADC seems to be very promising for high-accuracy measurement of medium-bandwidth signals. The possibilities of creating a number of SFQ devices with outstanding parameters are discussed.
A simple test circuit of the rapid single-flux-quantum (RSFQ) logic family has been implemented in a planarized all-refractory technology using only two superconducting layers and small Nb/AlOx/Nb Josephson junctions (nominally 1.5×1.5 μm2) with critical current density jc≊6 kA/cm2. A special layout design of the integrated circuit (including a SFQ pulse generator, Josephson transmission line, and T flip–flop) was used to reduce 3D inductances resulting from absence of the ground plane. For samples with various junction parameters, the maximum frequency of the SFQ pulse train, which could be divided by 2 by the flip–flop, ranged from 200 to 370 GHz.
We have developed integrated circuits in rapid single flux quantum (RSFQ) impulse logic based on intrinsically shunted tunnel junctions as the active circuit elements. The circuits have been fabricated using superconductor-insulator-normalconductor-insulator-superconductor (SINIS) multilayer technology. The paper presents experimental results of the operation of various RSFQ circuits realized in different designs and layouts. The circuits comprise dc/SFQ and SFQ/dc converters, Josephson transmission lines (JTLs), T-flipflops, and analog key components. Functionality has been proved; the circuits have been found to operate correctly in switching. The circuits investigated have a critical current density of j/sub C/=400 A/cm/sup 2/ and a characteristic voltage of V/sub C/=165 /spl mu/V, the area of the smallest junction is A=24 /spl mu/m/sup 2/. The junctions exhibit nearly hysteresis-free current-voltage characteristics (hysteresis: less than 7%), the intra-wafer parameter spread for j/sub C/ is below /spl plusmn/8%. The margins of the bias current I/sub b/ of the circuits have been experimentally determined and found to be larger than /spl plusmn/24%. At preset, constant values of I/sub b/, the range of a separate bias current I/sub bsw/ fed to a switching stage integrated between two segments of JTL's is fully covered by the operation margins which are larger than /spl plusmn/56%.
We report on the fabrication and the operation of all-NbN rapid single flux quantum (RSFQ) circuits. The NbN integrated circuit consists of NbN/AlN/NbN tunnel junctions, Mo resistors, sputtered SiO/sub 2/ insulating layers, and 400-nm-thick NbN ground plane and wiring layer. The circuits were fabricated with the minimum junction size of 2 /spl mu/m/spl times/2 /spl mu/m and the alignment margin of +/-0.5 /spl mu/m. We designed RSFQ logic cells under critical current density of 2.5 kA/cm/sup 2/, sheet resistance of 2 /spl Omega/ and sheet inductance of 1.4 pH. We experimentally investigated dc bias margin of the fabricated RSFQ cells at 9 K. We observed relatively large dc bias margin of more than +/-25% for a pulse splitter, a confluence buffer and an RS flip-flop, while the dc bias margin of a T flip-flop was less than +/-5%. We succeeded to demonstrate the operation of 16-bit concurrent flow shift register at 9 K.
Some basic cells in the rapid single-flux quantum (RSFQ) family of superconductive logic circuits were studied. An input stage, a buffer, and an OR gate were simulated and laid out for a standard niobium-based fabrication process. The resulting circuits perform properly for clock speeds up to 1 GHz. For the simpler circuits tested, the measured margins are wide, consistent with simulations, and not very dependent on clock speed. However, margin decreases with increased circuit complexity. The input stage converts a rising edge into an SFQ pulse, which has a small amplitude and narrow width in time. On the present circuits, these pulses are about 200 mu V in amplitude and 10 ps in width. To facilitate measurement, the authors have chosen as the output an asymmetrical superconducting quantum interference device (SQUID) consisting of two Josephson junctions. It converts SFQ pulses into 2.5 mV latching output levels on chip. By inductively coupling SFQ pulses into the SQUID loop, DC current isolation between the RSFQ circuit-under-test and the output stage is provided. The SQUID was optimized for 2 GHz operations.>
We report low-power single-flux-quantum (SFQ) circuits fabricated with a lowered critical current density process and low-voltage design. We selected 250 A/cm2^{2}2to obtain 2–10 μA Josephson junctions (JJs) easily using conventional facilities. Our numerical simulation shows that the expected operating frequency is 10 GHz and that we can reduce the bias voltage to 0.1–0.5 mV; power consumption can be reduced to around 1 nW per JJ. We newly developed a fabrication process featuring four planarized Nb layers and a Pd resistor layer. We obtained the correct operation of several basic SFQ circuit elements designed with the lowered critical currents to 1/2 of the conventional circuits at 4.2 K. We also evaluated the Josephson junction critical currents, specific capacitance, resistance, and inductance at 3 K and 300 mK. We observed an increase of 7% in the critical currents at 300 mK, while the other parameters were unchanged. We demonstrated a 0.5-mV Josephson transmission line where we lowered the critical currents to 1/10. We expect such low-power SFQ circuits to operate at 20 mK, providing classical, general-purpose digital processing near quantum bits.