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International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)

Heterodyne Mixing Performance of Distributed Nb Superconducting Junction Arrays at 1.2 THz

S.-C. Shi

Published Sep 1, 2006• 0 citations
Publisher

Abstract

In this paper we focus on the investigation of the heterodyne mixing performance of distributed Nb superconducting SIS junction arrays at 1.2 THz, which have individual SIS junctions uniformly distributed (connected in parallel) along a superconducting thin-film microstrip line.
DOI
10.1109/icimw.2006.368731

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The heterodyne mixing performance of three respective distributed junction arrays, i.e., a number of superconductor-insulator-superconductor (SIS) junctions distributed along a thin-film transmission line involving two, five, and ten junctions are measured and compared to their Fourier transform spectroscopy (FTS) detection responses. It has been found that distributed junction arrays have a rather large bandwidth in comparison to conventional SIS junction devices, while still keeping a quantum-limited noise performance. Detailed experimental results are presented.
Heterodyne mixers based on superconducting SIS (superconductor-insulator-superconductor) tunnel junctions have been demonstrated to be the most sensitive coherent detectors at millimeter and submillimeter wavelengths. In fact, conventional superconducting SIS mixers with Nb/AIO(x)/Nb junction and Nb/SiO2/Nb tuning circuit have shown good performances with the noise temperature reaching as low as three times the quantum limit below 0.7THz, which is the gap frequency of Nb-based SIS junctions. However, due to the large loss in Nb thin-film superconducting microstrip lines, the noise performance of Nb SIS mixers deteriorates significantly above 0.7THz. With a gap frequency double that of Nb-based SIS junctions, NbN-based SIS junctions are of particular interest for the development of heterodyne mixers in the terahertz region.
SIS heterodyne mixer technology based on niobium tunnel junctions has now been pushed to frequencies over 1 THz, clearly demonstrating that the SIS junctions are capable of mixing at frequencies up to twice the energy gap frequency (4(Delta) /h). However, the performance degrades rapidly above the gap frequency of niobium (2(Delta) /h approximately equals 700 GHz) due to substantial ohmic losses in the on-chip tuning circuit. To solve this problem, the tuning circuit should be fabricated using a superconducting film with a larger energy gap, such as NbN; unfortunately, NbN films often have a substantial excess surface resistance in the submillimeter band. In contrast, the SIS mixer measurements we present in this paper indicate that the losses for NbTiN thin films can be quite low.