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Applied Physics Letters

Optically induced current bistability in coupled quantum wells

Anand V. Ramamurthi, Vivek Srinivas, G. M. Hegde

Published Nov 24, 1997• 0 citations
Publisher

Abstract

We report the observation of bistability in the photocurrent and photoluminescence spectra of GaAs quantum well heterostructures. The excitation energy is nonresonant and above the band-gap energy of the barrier. A self-consistent calculation taking into account the rate equations governing the charge distribution in the wells is shown to result in the observed bistability which leads to a new class of optically bistable devices.

DOI
10.1063/1.120264

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We report the observation of bistability in the photocurrent and photoluminescence spectra of GaAs quantum well heterostructures. The excitation energy is nonresonant and above the band-gap energy of the barrier. A self-consistent calculation taking into account the rate equations governing the charge distribution in the wells is shown to result in the observed bistability which leads to a new class of optically bistable devices.
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Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.
Photoluminescence spectra of interwell excitons in double GaAs/AlGaAs quantum wells (n-i-n structures) have been investigated (an interwell exciton in these systems is an electron-hole pair spatially separated by a narrow AlAs barrier). Under resonance excitation by circularly polarized light, the luminescence line of interwell excitons exhibits a significant narrowing and a drastic increase in the degree of circular polarization of photoluminescence with increasing exciton concentration. It is found that the radiative recombination rate significantly increases under these conditions. This phenomenon is observed at temperatures lower than the critical point and can be interpreted in terms of the collective behavior of interwell excitons.