Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Log inSign up
Challenges
Datasets
Workspaces
Papers
Discussions
Leaderboard
Blog
Job Board
Q3AS

© 2026 Aqora Quantum S.A.S.

TermsPrivacyLegal Notice

Applied Physics Letters

Charge-transfer-induced optical bistability in an asymmetric quantum-well structure

Myron Seto, M. Helm

Published Feb 17, 1992• 37 citations
Publisher

Abstract

We present self-consistent calculations of the energy levels in an asymmetric coupled quantum-well structure coupled to a CO2 laser source which is nearly resonant with an intersubband transition. Solving Schrödinger’s and Poisson’s equations concurrently with a set of rate equations, it is shown that intrinsic optical bistability can be achieved. The bistability arises from charge transfer and a subsequent, self-consistent shift of the energy levels which feeds back to the absorption rate. Using realistic parameters, an on-off intensity ratio of 4:1 at switching powers of a few 100 kW/cm2 is predicted at about 10-μm wavelength.

DOI
10.1063/1.106511

Related papers

Intersubband optical bistability induced by resonant tunneling in an asymmetric double quantum well

Mark I. Stockman, Lakshmi N. Pandey, Leonid S. Muratov +1 more

An intrinsic optical bistability in a double quantum well is described theoretically. The effect is based on the resonant tunneling of electrons against the electric-field force (the counterfield electron transfer) and is driven and controlled by far-ir radiation exciting an intersubband transition. The theory relies on the density-matrix technique and takes into account optical intersubband excitation, interwell tunneling, the relaxation of populations and polarizations, and the mean-field effects of the transferred electron charge (shifts of the levels and changes of matrix elements). Hysteresis-type curves are obtained for both the charge-transfer probability and the optical absorption as functions of the light intensity. The theory shows the effect to be readily observable under realistic conditions, with the exciting-light intensity as low as 50 W/${\mathrm{cm}}^{2}$.

Physical review. B, Condensed matter•Oct 15, 1993•25 citations

Optical Bistability Induced by Charge Separation in Asymmetric Quantum Wells

Sandro Scandolo, F. Tassone

Abstract A novel mechanism for intrinsic optical bistability in quantum wells is proposed. In suitable structures the intrinsic electric field generated by optical excitation leads to the lowering of some interband transition energies. Therefore, increasing‐absorption bistability occurs for proper choice of operation conditions, without considering excitonic or many‐body effects. A numercal study of a InAs–GaSb quantum well is carried out and switch‐on intensities of the order of 102 kW/cm2 for a nanosecond response time are found.

physica status solidi (b)•Sep 1, 1992•8 citations

On the intersubband optical bistability in semiconductor quantum wells: the influence of the permanent dipole moment

Z. Ikonić, V. Milanović

Some interesting features of the intrinsic optical bistability, based on intersubband transitions in asymmetric semiconductor quantum wells, are analyzed within the two-level model. In particular, the excitation-induced levels shifting, on which the bistability relies, is found to be significantly influenced by the exchange-correlation potential, thus requiring self-consistent modeling-the simple charge separation dipole model is not accurate enough. The optical influence of the permanent dipole moment, characterizing bound states in asymmetric quantum wells, is also analyzed. This is found to have some beneficial and some adverse consequences on bistability, both of which may be quite important in realistic structures.>

IEEE Journal of Quantum Electronics•Jan 1, 1995•11 citations

Electrooptical switching and bistability in coupled quantum wells

Jacob B. Khurgin

Modulation-doped system of asymmetric coupled quantum wells is shown theoretically to possess a large optical nonlinearity due to the charge transfer associated with intersubband transition. The range of parameters leading to optical bistability has been determined. A novel triple quantum well system is suggested, allowing a few orders of magnitude reduction in switching power density, to ~50 W/cm2, while having a response time of <100 ps. Optically assisted transfer of up to 90% of all carriers between wells can become an operating principle of novel hybrid optoelectronic devices, incorporating the triple quantum well system into the channel of modulation-doped field-effect transistor with potential applications as fast optoelectronic switches and detectors in the 10-µm range.

Annual Meeting Optical Society of America•Jan 1, 1989•1 citation

Effect of Coulomb interaction on nonlinear (intensity-dependent) optical processes and intrinsic bistability in a quantum well under the electric and magnetic fields

İbrahim Karabulut

The effect of the electrostatic Coulomb interaction on the line shape related to the intensity-dependent intersubband optical processes in a Si δ-doped quantum well is studied using the density matrix formalism. The electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schrödinger–Poisson equations. The line shape function is considerably modified by the optical intensity and the electric and magnetic fields. Moreover, we demonstrate the existence of the optical bistability for appropriate values of the optical intensity and also the control of the optical bistability with the electric and magnetic fields. It is also found that the intersubband relaxation time plays an important role in determining the optical bistability region.

Journal of Applied Physics•Mar 1, 2011•17 citations

Electro-optical switching and bistability in coupled quantum wells

Jacob B. Khurgin

A modulation-doped system of asymmetric-coupled quantum wells is shown theoretically to possess a large optical nonlinearity due to the change transfer associated with intersubband transition. The range of parameters leading to optical bistability is detetermined. A novel triple quantum well system is suggested, allowing a few orders of magnitude reduction in switching power density. Novel hybrid optoelectronic devices, incorporating the triple quantum well system into the channel of a modulation-doped field-effect transistor, are proposed with potential applications as optoelectronic switches and detectors.

Applied Physics Letters•Jun 19, 1989•33 citations
We present self-consistent calculations of the energy levels in an asymmetric coupled quantum-well structure coupled to a CO2 laser source which is nearly resonant with an intersubband transition. Solving Schrödinger’s and Poisson’s equations concurrently with a set of rate equations, it is shown that intrinsic optical bistability can be achieved. The bistability arises from charge transfer and a subsequent, self-consistent shift of the energy levels which feeds back to the absorption rate. Using realistic parameters, an on-off intensity ratio of 4:1 at switching powers of a few 100 kW/cm2 is predicted at about 10-μm wavelength.
An intrinsic optical bistability in a double quantum well is described theoretically. The effect is based on the resonant tunneling of electrons against the electric-field force (the counterfield electron transfer) and is driven and controlled by far-ir radiation exciting an intersubband transition. The theory relies on the density-matrix technique and takes into account optical intersubband excitation, interwell tunneling, the relaxation of populations and polarizations, and the mean-field effects of the transferred electron charge (shifts of the levels and changes of matrix elements). Hysteresis-type curves are obtained for both the charge-transfer probability and the optical absorption as functions of the light intensity. The theory shows the effect to be readily observable under realistic conditions, with the exciting-light intensity as low as 50 W/cm2{\mathrm{cm}}^{2}cm2.
Abstract A novel mechanism for intrinsic optical bistability in quantum wells is proposed. In suitable structures the intrinsic electric field generated by optical excitation leads to the lowering of some interband transition energies. Therefore, increasing‐absorption bistability occurs for proper choice of operation conditions, without considering excitonic or many‐body effects. A numercal study of a InAs–GaSb quantum well is carried out and switch‐on intensities of the order of 102 kW/cm2 for a nanosecond response time are found.
Some interesting features of the intrinsic optical bistability, based on intersubband transitions in asymmetric semiconductor quantum wells, are analyzed within the two-level model. In particular, the excitation-induced levels shifting, on which the bistability relies, is found to be significantly influenced by the exchange-correlation potential, thus requiring self-consistent modeling-the simple charge separation dipole model is not accurate enough. The optical influence of the permanent dipole moment, characterizing bound states in asymmetric quantum wells, is also analyzed. This is found to have some beneficial and some adverse consequences on bistability, both of which may be quite important in realistic structures.>
Modulation-doped system of asymmetric coupled quantum wells is shown theoretically to possess a large optical nonlinearity due to the charge transfer associated with intersubband transition. The range of parameters leading to optical bistability has been determined. A novel triple quantum well system is suggested, allowing a few orders of magnitude reduction in switching power density, to ~50 W/cm2, while having a response time of <100 ps. Optically assisted transfer of up to 90% of all carriers between wells can become an operating principle of novel hybrid optoelectronic devices, incorporating the triple quantum well system into the channel of modulation-doped field-effect transistor with potential applications as fast optoelectronic switches and detectors in the 10-µm range.
The effect of the electrostatic Coulomb interaction on the line shape related to the intensity-dependent intersubband optical processes in a Si δ-doped quantum well is studied using the density matrix formalism. The electronic structure of the quantum well is calculated from the self-consistent numerical solution of the coupled Schrödinger–Poisson equations. The line shape function is considerably modified by the optical intensity and the electric and magnetic fields. Moreover, we demonstrate the existence of the optical bistability for appropriate values of the optical intensity and also the control of the optical bistability with the electric and magnetic fields. It is also found that the intersubband relaxation time plays an important role in determining the optical bistability region.
A modulation-doped system of asymmetric-coupled quantum wells is shown theoretically to possess a large optical nonlinearity due to the change transfer associated with intersubband transition. The range of parameters leading to optical bistability is detetermined. A novel triple quantum well system is suggested, allowing a few orders of magnitude reduction in switching power density. Novel hybrid optoelectronic devices, incorporating the triple quantum well system into the channel of a modulation-doped field-effect transistor, are proposed with potential applications as optoelectronic switches and detectors.