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Applied Physics Letters

Electro-optical switching and bistability in coupled quantum wells

Jacob B. Khurgin

Published Jun 19, 1989• 33 citations
Publisher

Abstract

A modulation-doped system of asymmetric-coupled quantum wells is shown theoretically to possess a large optical nonlinearity due to the change transfer associated with intersubband transition. The range of parameters leading to optical bistability is detetermined. A novel triple quantum well system is suggested, allowing a few orders of magnitude reduction in switching power density. Novel hybrid optoelectronic devices, incorporating the triple quantum well system into the channel of a modulation-doped field-effect transistor, are proposed with potential applications as optoelectronic switches and detectors.

DOI
10.1063/1.101058

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A modulation-doped system of asymmetric-coupled quantum wells is shown theoretically to possess a large optical nonlinearity due to the change transfer associated with intersubband transition. The range of parameters leading to optical bistability is detetermined. A novel triple quantum well system is suggested, allowing a few orders of magnitude reduction in switching power density. Novel hybrid optoelectronic devices, incorporating the triple quantum well system into the channel of a modulation-doped field-effect transistor, are proposed with potential applications as optoelectronic switches and detectors.
Modulation-doped system of asymmetric coupled quantum wells is shown theoretically to possess a large optical nonlinearity due to the charge transfer associated with intersubband transition. The range of parameters leading to optical bistability has been determined. A novel triple quantum well system is suggested, allowing a few orders of magnitude reduction in switching power density, to ~50 W/cm2, while having a response time of <100 ps. Optically assisted transfer of up to 90% of all carriers between wells can become an operating principle of novel hybrid optoelectronic devices, incorporating the triple quantum well system into the channel of modulation-doped field-effect transistor with potential applications as fast optoelectronic switches and detectors in the 10-µm range.
We propose the use of a novel doped, stepped semiconductor quantum well structure as an optical nonlinear element. The large nonlinearity results from the change of many-body effects on resonant excitation of electrons from the ground to the first excited subband. Self-consistent calculations showed that the intersubband energy separation can be increased by up to 7 meV on intense illumination, compared to 1 meV for a conventional, square quantum well. We estimate that optical switching at powers below 1 W are feasible in an optimized structure, with switching times of about 1 ps.
Abstract This paper briefly reviews the nonlinear optical and electro-optical properties and applications of GaAs—AlGaAs multiple quantum wells, all of which are compatible with laser diodes or semiconductor electronics or both. They show large nonlinear absorption and refraction (associated with their strong room-temperature exciton resonances) applicable to all-optical devices. They also show large electroabsorptive effects, some of which are unique to the quantum wells at any temperature, which are so strong that optical modulators can be made with micrometre dimensions. A new class of optical bistability (due to increasing absorption) is also reviewed; combination of this with the electroabsorptive effects enables a new mirrorless optical switch called a Self Electro-optic Effect Device (SEED), which sets a new standard for optical switching energies, with energy densities reduced by a factor of six by comparison to even the best resonant cavity devices.
In multiple quantum wells system, a large dipole strength and a narrow band width were observed. This suggests that the intersubband optical transitions in a quantum well may have very large optical nonlinearities. The intersubband transition have potential for device applications in far-infrared laser amplifiers, photodetectors and high-speed electrooptical modulators. In device design, the region of input optical density for linear response is a very important parameter. And the optical saturation is related with tunnelling effects and the intersubband relaxations. So the intersubband nonlinear absorption is very valuble for a fundamental and a practical point of views. Recently, there are some works on this region [1], [2].
We present a review of optical bistability in active and passive optoelectronic devices, with particular reference to switching speeds and powers. The large resonant nonlinearities available near the bandgaps of semiconductors may be utilized to develop bistable devices operating at low powers and high speeds. Passive devices are driven by external optical sources and include nonlinear etalons, nonlinear interfaces, self-focusing configurations and electro-optic modulators with electrical feedback. Active devices include injection lasers and superluminescent amplifiers. Potential advantages of active devices include speed, gain, sensitivity and the ability to drive other devices, but complexity and high power dissipation may limit their use in applications requiring high density.
Electro-optical effects, such as the Franz-Keldysh effect in bulk materials or the quantum confined Stark effect in quantum well structures, lead to strong optoelectronic nonlinearities which form the basis for optical modulators and optically bistable devices. They result from a modification of the optical absorption properties by an applied electric field and are particularly pronounced in the case of low dimensional semiconductors. We review theoretical modelling and computer simulations of such optoelectronic devices in particular for ZnSe based quantum well structures, where excitonic features dominate even at room temperature. The field dependent absorption spectra are calculated by a many-body theory including the full electron-electron interaction. The transition from the quantum confined Stark effect, which is found for well widths smaller than the exciton Bohr diameter, to the Franz-Keldysh effect, which corresponds to the limit of wide wells, is studied. Optical bistability and switching is found in R-SEED and D-SEED configurations, and the optimization of the device performance is discussed.